Download: TEA2025B TEA2025D STEREO AUDIO AMPLIFIER

TEA2025B TEA2025D STEREO AUDIO AMPLIFIER DUAL OR BRIDGE CONNECTION MODES FEW EXTERNAL COMPONENTS SUPPLY VOLTAGE DOWN TO 3V HIGH CHANNEL SEPARATION VERY LOW SWITCH ON/OFF NOISE MAX GAIN OF 45dB WITH ADJUST EXTER- POWERDIP 12+2+2 SO20 (12+4+4) NAL RESISTOR SOFT CLIPPING ORDERING NUMBERS: TEA2025B (PDIP) THERMAL PROTECTION TEA2025D (SO) 3V < VCC < 15V P = 2 • 1W, VCC = 6V, RL = 4Ω DESCRIPTION P = 2 • 2.3W, VCC = 9V, RL = 4Ω The TEA2025B/Dis a monolithic integrated circuit P = 2 • 0.1W, VCC = 3V, RL = 4Ω in 12+2+2 Powerdip and 12+4+4 SO, intended for use as dual or bridge power audio amplifier por...
Author: Naruaki Sugahara Shared: 7/30/19
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TEA2025B TEA2025D STEREO AUDIO AMPLIFIER

DUAL OR BRIDGE CONNECTION MODES FEW EXTERNAL COMPONENTS SUPPLY VOLTAGE DOWN TO 3V HIGH CHANNEL SEPARATION VERY LOW SWITCH ON/OFF NOISE MAX GAIN OF 45dB WITH ADJUST EXTER- POWERDIP 12+2+2 SO20 (12+4+4) NAL RESISTOR SOFT CLIPPING ORDERING NUMBERS: TEA2025B (PDIP) THERMAL PROTECTION TEA2025D (SO) 3V < VCC < 15V P = 2 • 1W, VCC = 6V, RL = 4Ω DESCRIPTION P = 2 • 2.3W, VCC = 9V, RL = 4Ω The TEA2025B/Dis a monolithic integrated circuit P = 2 • 0.1W, VCC = 3V, RL = 4Ω in 12+2+2 Powerdip and 12+4+4 SO, intended for use as dual or bridge power audio amplifier port- able radio cassette players. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Test Conditions Unit VS Supply Voltage 15 V IO Ouput Peak Current 1.5 A TJ Junction Temperature 150 °C Tstg Storage Temperature 150 °C BLOCK DIAGRAM GND(Sub) IN 1+ FEED GND GND BOOT 1 OUT 1 50Ω THERMAL 10KΩ PROTECT. - 1 1 START + 5KΩ

CIRCUIT

SVR DECOUPLING VS+

BRIDGE

IN 2+ - 50Ω22+ 10KΩ 50Ω D94AU120 FEED GND GND BOOT 2 OUT 2 June 1994 1/9,

POWERDIP 12+2+2 PIN CONNECTION (Top view) BRIDGE 1 16 +Vs OUT.2 2 15 OUT.1 BOOT.2 3 14 BOOT.1 GND 4 13 GND GND 5 12 GND FEEDBACK 6 11 FEEDBACK IN.2 (+) 7 10 IN.1 (+) SVR89GND (sub.) SO 12+4+4 PIN CONNECTION (Top view)

BRIDGE 1 20 VCC OUT2219 OUT 1 BOOT2318 BOOT 1 GND 4 17 GND GND 5 16 GND GND 6 15 GND GND 7 14 GND FEEDBACK 8 13 FEEDBACK IN 2(+) 9 12 IN 1(+) SVR 10 11 GND(Sub) D94AU119

THERMAL DATA

Symbol Description SO 12+4+4 (*) PDIP 12+2+2 (**) Unit Rth j-case Thermal Resistance Junction-case Max 15 15 °C/W Rth j-amb Thermal Resistance Junction-ambient Max 65 60 °C/W (*) The Rth j-amb is measured with 4sq cm copper area heatsink (**) The Rth j-amb is measured on devices bonded on a 10x5x0.15cm glass-epoxy substrate with a 35µm thick copper surface of 5 cm2. 2/9,

ELECTRICAL CHARACTERISTICS (Tamb = 25°C, VCC = 9V, Stereo unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit VS Supply Voltage 3 12 V IQ Quiescent Current 35 50 mA VO Quiescent Output Voltage 4.5VAVoltage Gain Stereo 43 45 47V Bridge 49 51 53 dB ∆AV Voltage Gain Difference ±1 dB Rj Input Impedance 30 KΩ PO Output Power (d = 10%) Stereo 8 (per channel) 9V 4Ω 1.7 2.3 9V 8Ω 1.3 6V 4Ω 0.7 1 6V 8Ω 0.6 6V 16Ω 0.25 W 6V 32Ω 0.13 3V 4Ω 0.1 3V 32Ω 0.02 12V 8Ω 2.4 9V 8Ω 4.7 6V 4Ω 2.8 Bridge 6V 8Ω 1.5 W 3V 16Ω 0.18 3V 32Ω 0.06 d Distortion Vs = 9V; R = 4Ω Stereo 0.3 1.5 L %Bridge 0.5 SVR Supply Voltage Rejection f = 100Hz, VR = 0.5V, Rg = 0 40 46 dB EN(IN) Input Noise Voltage RG = 0 1.5 RG = 10 4Ω36mV CT Cross-Talk f = 1KHz, Rg = 10KΩ 40 52 dB Term. N° (PDIP) 12345678910 11 12 13 14 15 16 DC VOLT (V) 0.04 4.5 8.9000.6 0.04 8.5 0 0.04 0.6008.9 4.5 9

Figure 1: Bridge Application (Powerdip) Figure 2: Stereo Application (Powerdip)

C1 C6 C10 C4 C8 C2 C5 C7 C11 C9 C3 3/9, Figure 3: Supply Current vs. Supply Voltage Figure 4: Output Voltage vs. Supply Voltage (RL = 4Ω) I(mA) Vo(V)8 20 STEREO STEREO136912 1536912 15 Vs(V) Vs(V) Figure 5: Output Power vs. Supply Voltage Figure 6: THD versus Output Power (THD = 10%, f = 1KHz) (f = 1KHz, VS = 6V) Po(W) 10THD(%)3.5 2.5 Rl=16ohmRl=8ohm Rl=4ohm Rl=8ohm Rl=16ohm Rl=4 OHM211.5

STEREO

0.5

STEREO

0 0.136912 15 0 0.2 0.4 0.6 0.8 1 Vs(V) Po(W) 4/9, APPLICATION INFORMATION The total gain of the bridge is given by: Input Capacitor VOUT = R1 (1+ R3 R1 ) Input capacitor is PNP type allowing source to be VIN 1 R4 1Rf+R2 + R2+R4+ referenced to ground. JWC1 JWC1 In this way no input coupling capacitor is required. and with the suggestedvalues (C1 = C2 = 100 µF, However, a series capacitor (0.22 uF)to the input Rf= 0) means: side can be useful in case of noise due to variable Gv = 52 dB resistor contact. Figure 8 Bootstrap The bootstrap connection allows to increase the output swing. The suggested value for the bootstrap capacitors (100uF) avoids a reduction of the output signal also at low frequenciesand low supply voltages. Voltage Gain Adjust STEREO MODE The voltage gain is determined by on-chip resis- tors R1 and R2 together with the external RfC1 series connected between pin 6 (11) and ground. The frequency response is given approximated by: with first pole at f = 32 Hz VOUT = R1 VIN 1 Output Capacitors.Rf + R2 + JWC1 The low cut off frequency due to output capacitor With Rf=0, C1=100 uF, the gain results 46 dB dependingon the load is given by: with pole at f=32 Hz. THE purpose of Rf is to reduce the gain. It is rec- 1 ommended to not reduce it under 36 dB. FL = 2 ΠCOUT • RL BRIDGE MODE with COUT 470µF and RL = 4 ohm it means FL =80 Hz. Figure 7 Pop Noise Most amplifiers similar to TEA 2025B need exter- nal resistors between DC outputs and ground in order to optimize the pop on/off performance and crossover distortion. Figure 9 The bridge configuration is realized very easily thanks to an internal voltage divider which pro- vides (at pin 1) the CH 1 output signal after reduc- The TEA 2025B solution allows to save compo- tion. It is enough to connect pin 6 (inverting input nents because of such resistors (800 ohm)are in- of CH 2) with a capacitor to pin 1 and to connect cluded into the chip. to ground the pin 7. 5/9, - No sockets. Stability 2) the heatsink can have a smaller factor of safety A good layout is recommended in order to avoid compared with that of a conventional circuit. oscillations. There is no device damage in the case of ex- Generally the designer must pay attention on the cessive junction temperature: all that happens following points: is that PO (and therefore Ptot) and Id are re-duced. - Short wires of components and short connec- tions. APPLICATION SUGGESTION - No ground loops. The recommended values of the components are - Bypass of supply voltage with capacitors as those shown on stereo application circuit of nearest as possible to the supply I.C.pin.The low value(poliester)capacitors must have Fig. 2 different values can be used, the follow- good temperature and frequency charac- ing table can help the designer. teristics. COMPONENT RECOMMENDEDVALUE PURPOSE LARGER THAN SMALLER THAN C1,C2 0.22µF INPUT DC DECOUPLING IN CASE OF SLIDER CONTACT NOISE OF

VARIABLE RESISTOR

C3 100µF DEGRADATION OF RIPPLE REJECTON SVR, INCREASE OF THD AT LOW FREQUENCY AND LOW VOLTAGE C4,C5 100µF BOOTSTRAP C6,C7 470µF INCREASE OF LOW OUTPUT DC DECOUPLING FREQUENCY CUT-OFF C8,C9 0.15µF FREQUENCY DANGER OF STABILITY OSCILLATIONS C10, C11 100µF INVERTING INPUT INCREASE OF LOW DC DECOUPLING FREQUENCY CUT-OFF 6/9,

SO20 PACKAGE MECHANICAL DATA

mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 2.65 0.104 a1 0.1 0.3 0.004 0.012 a2 2.45 0.096 b 0.35 0.49 0.014 0.019 b1 0.23 0.32 0.009 0.013 C 0.5 0.020 c1 45 (typ.) D 12.6 13.0 0.496 0.512 E 10 10.65 0.394 0.419 e 1.27 0.050 e3 11.43 0.450 F 7.4 7.6 0.291 0.299 L 0.5 1.27 0.020 0.050 M 0.75 0.030S8(max.) 7/9,

DIP16 PACKAGE MECHANICAL DATA

mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. a1 0.51 0.020 B 0.85 1.40 0.033 0.055 b 0.50 0.020 b1 0.38 0.50 0.015 0.020 D 20.0 0.787 E 8.80 0.346 e 2.54 0.100 e3 17.78 0.700 F 7.10 0.280 I 5.10 0.201 L 3.30 0.130 Z 1.27 0.050 8/9, Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications men- tioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without ex- press written approval of SGS-THOMSON Microelectronics. 1994 SGS-THOMSON Microelectronics - All RightsReserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A. 9/9]
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