Download: INTEGRATED CIRCUITS DATA SHEET TEA5710; TEA5710T AM/FM radio receiver circuit Product specification March 1994 File under Integrated Circuits, IC01

INTEGRATED CIRCUITS

DATA SHEET TEA5710; TEA5710T AM/FM radio receiver circuit

Product specification March 1994 File under Integrated Circuits, IC01, FEATURES APPLICATIONS • Wide supply voltage range: 2.0 to 12 V • Portable AM/FM radio • Low current consumption: 7.5 mA at AM, 9.0 mA at FM • Clock radio • High selectivity with distributed IF gain • Personal headphone radio • LED driver for tuning indication • High input sensitivity: 1.6 mV/m (AM), 2.0 µV (FM) for 26 DESCRIPTION dB S/N The TEA5710 is a high performance Bimos IC for use in • Good strong signal behaviour: 10 V/m at AM, 500 mV at AM/FM radios. All necessary functions are integrated: FM from AM and FM front-end to detector output stages. • Low output distortion: 0.8% at AM, 0.3% at FM • Designed for simple and reliable PC-board layout • High impedance MOSFET input on AM QUICK REFERENCE DATA Conditions AM: fi = 1 MHz; m = 0.3; fm = 1 kHz; VP = 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A, unless otherwise specified. Conditions FM: fi = 100 MHz; ∆f = 22.5 kHz; fm = 1 kHz; VP = 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A, unless otherwise specified. SYMBOL PARAMETER MIN. TYP. MAX. UNIT VP positive supply voltage 2.0 − 12 V IP supply current in AM mode 5.6 7.5 9.9 mA in FM mode 7.3 9.0 11.2 mA Tamb operating ambient temperature range −15 − +60 °C AM performance Vin1 RF sensitivity 40 55 70 µV V13 AF output voltage 36 45 70 mV THD total harmonic distortion − 0.8 2.0 % FM performance Vin3 RF sensitivity 1.0 2.0 3.8 µV V13 AF output voltage 47 58 69 mV THD total harmonic distortion − 0.3 0.8 % ORDERING INFORMATION EXTENDED TYPE PACKAGE NUMBER PINS PIN POSITION MATERIAL CODE TEA5710 24 SDIL plastic SOT234AG(1) TEA5710T 24 SO24L plastic SOT137A(2) Notes 1. SOT234-1; 1996 August 27. 2. SOT137-1; 1996 August 27. March 1994 2, handbook, full pagewidth FM-RFI FM-RFO FM-MIXER FM-IF1I FM-RF1O FM-IF2I FM-DEM 1 2046810 12 24 FM FM FM FM FM

RFGND

FRONT-END MIXER IF 1 IF 2 DETECTOR FM-OSC 16 14 VP FM AM/FMFM 22 TEA5710 AM/FM RIPPLE OSCILLATOR SWITCHTEA5710T AM 5 21 AM-AGC/ VSTABA STABILIZER FM-AFC VSTABB AM AM/FM 15 11 IND IFGND OSCILLATOR AGC INDICATOR AM-OSC 23 AM AM AM 13 AM-RFI AM-IF AFFRONT-END MIXER DETECTOR32719 AM-MIXER AM-IF1I AM-IF2I/O SUBGND MGE106

Fig.1 Block diagram. March 1994 3

,

PINNING

SYMBOL PIN DESCRIPTION FM-RFI 1 FM-RF aerial input (input impedance typ. 50 Ω) AM-IF1I 2 input from IFT or ceramic filter (input impedance typ. 3 kΩ) AM-MIXER 3 open-collector output to IFT FM-MIXER 4 output to ceramic IF filter (output impedance typ. 330 Ω) VSTABA 5 stabilized internal supply voltage (A) FM-IF1I 6 first FM-IF input (input impedance typ. 330 Ω) AM-IF2I/O 7 input/output to IFT; output: current source FM-IF1O 8 first FM-IF output (output impedance typ. 330 Ω) VSTABB 9 stabilized internal supply voltage (B) FM-IF2I 10 second FM-IF input (input impedance typ. 330 Ω) IFGND 11 ground of IF and detector stages FM-DEM 12 ceramic discriminator pin AF 13 audio output (output impedance typ. 5 kΩ) AM/FM 14 switch terminal: open for AM; ground for FM IND 15 field-strength dependent indicator VP 16 positive supply voltage AM-OSC 17 parallel tuned AM-OSC circuit to ground FM-OSC 18 parallel tuned FM-OSC circuit to ground SUBGND 19 substrate and RF ground FM-RFO 20 parallel tuned FM-RF circuit to ground AM-AGC/FM-AFC 21 AGC/AFC capacitor pin RIPPLE 22 ripple capacitor pin AM-RFI 23 parallel tuned AM aerial circuit to ground (total input capacitance typ. 3 pF) RFGND 24 FM-RF ground March 1994 4, handbook, halfpage handbook, halfpage FM-RFI 1 24 RFGND FM-RFI 1 24 RFGND AM-IFI 2 23 AM-RFI AM-IFI 2 23 AM-RFI AM-MIXER 3 22 RIPPLE AM-MIXER 3 22 RIPPLE FM-MIXER 4 21 AM-AGC/FM-AFC FM-MIXER 4 21 AM-AGC/FM-AFC VSTABA 5 20 FM-RFO VSTABA 5 20 FM-RFO FM-IF1I 6 19 SUBGND FM-IF1I 6 19 SUBGND TDA5710 TDA5710T AM-IF2I/O 7 18 FM-OSC AM-IF2I/O 7 18 FM-OSC FM-IF1O 8 17 AM-OSC FM-IF1O 8 17 AM-OSC VSTABB 9 16 VP VSTABB 9 16 VP FM-IF2I 10 15 IND FM-IF2I 10 15 IND IFGND 11 14 AM/FM IFGND 11 14 AM/FM FM-DEM 12 13 AF FM-DEM 12 13 AF MGE104 MGE105 Fig.2 Pin configuration TEA5710. Fig.3 Pin configuration TEA5710T. FUNCTIONAL DESCRIPTION The TEA5710 incorporates internal stabilized power supplies. The maximum supply voltage is 12 V, the minimum voltage can go down temporarily to 1.8 V without any loss in performance. The AM circuit incorporates a double balanced mixer, a one pin low-voltage oscillator (up to 30 MHz), a field-strength dependent indicator output and is designed for distributed selectivity. The AM input is designed to be connected to the top of a tuned circuit. AGC controls the IF amplification and for large signals it lowers the input impedance. The first AM selectivity can be an IFT as well as an IFT combined with a ceramic filter; the second one is an IFT. The FM circuit incorporates a tuned RF stage, a double balanced mixer, a one-pin oscillator, a field-strength indicator output and is designed for distributed IF ceramic filters. The FM quadrature detector uses a ceramic resonator. March 1994 5, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER MIN. MAX. UNIT VP positive supply voltage 0 12 V Tstg storage temperature range −55 +150 °C Tamb operating ambient temperature range −15 +60 °C Tj junction temperature range −15 +150 °C THERMAL RESISTANCE SYMBOL PARAMETER VALUE UNIT Rth j-a from junction to ambient for SDIL version TEA5710 69 K/W for SO24L version TEA5710T 76 K/W CIRCUIT DESIGN DATA DC PIN VOLTAGE (V) PIN NO. PIN SYMBOL EQUIVALENT CIRCUIT AM FM 220Ω1FM-RFI − 0.73 MGE114 3 kΩ AM-IF12I1.4 1.4 2 input MGE115 March 1994 6, DC PIN VOLTAGE (V) PIN NO. PIN SYMBOL EQUIVALENT CIRCUIT AM FM AM-MIXER 3 1.4 1.4 5 output MGE116 FM-MIXER 4 − 1.0 output 4 680 Ω MGE117 5 VSTABA 1.4 1.4 22 MGE118 120 Ω FM-IF6I− 0.73 2.7 input kΩ 11 MGE119 March 1994 7, DC PIN VOLTAGE (V) PIN NO. PIN SYMBOL EQUIVALENT CIRCUIT AM FM AM-IF2 7 I/O 1.4 1.4 input/output 11 MGE120 FM-IF1O 88 − 0.69 output 560 Ω MGE121 9 VSTABB 1.4 1.4 22 MGE122 180 Ω FM-IF2 10 I − 0.73 2.2 input kΩ 11 MGE123 11 IFGND00March 1994 8, DC PIN VOLTAGE (V) PIN NO. PIN SYMBOL EQUIVALENT CIRCUIT AM FM 180 Ω 12 FM-DEM − 1.0 910 Ω MGE124

AF

13 0.6 0.7 13 output 25 kΩ 5 kΩ 11 MGE125 AM/FM 14 1.3 0 switch 14 MGE126 15 IND 3.0 3.0 11 MGE127 16 VP 3.0 3.0 17 AM-OSC0019 MGE128 March 1994 9, DC PIN VOLTAGE (V) PIN NO. PIN SYMBOL EQUIVALENT CIRCUIT AM FM 18 FM-OSC0010 kΩ MGE129 19 SUBGND00220 Ω 20 FM-RFO00MGE114 AM-AGC/ 21 0.1 0.7 FM-AFC MGE130 March 1994 10, DC PIN VOLTAGE (V) PIN NO. PIN SYMBOL EQUIVALENT CIRCUIT AM FM 22 RIPPLE 2.1 2.1 11 MGE131 23 AM-RFI0023 MGE132 220 Ω 24 RFGND00MGE114 March 1994 11, AM CHARACTERISTICS fi = 1 MHz; m = 0.3; fm = 1 kHz; VP = 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A, unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IP supply current no input signal 5.6 7.5 9.9 mA Ci input capacitance V21 = 0.2 V − 3 − pF Gc front-end conversion gain V21 = 0.2 V 1.8 3.3 5.0 Vin1 RF sensitivity S/N = 26 dB 40 55 70 µV Vin2 IF sensitivity V13 = 30 mV; 0.13 0.2 0.45 mV S1 in position A V13 AF output voltage Vin2 = 3.16 mV; 36 45 70 mV S1 in position A THD total harmonic distortion Vin1 = 1 mV − 0.8 2.0 % Vin1 large signal handling m = 0.8; 150 300 − mV THD ≤ 8% IIND indicator current Vin2 = 100 mV; 2 3.5 6 mA S1 in position A IINDOFF indicator OFF current Vin2 = 0 V; − 0 10 µA S1 in position A FM CHARACTERISTICS fi = 100 MHz; ∆f = 22.5 kHz; fm = 1 kHz; VP = 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A, unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IP supply current no input signal 7.3 9.0 11.2 mA Vin3 RF limiting sensitivity V13 = −3 dB 0.4 1.2 3.8 µV Vin3 RF sensitivity S/N = 26 dB 1.0 2.0 3.8 µV V6/Vin3 front-end voltage gain Vin3 ≤ 1 mV; 12 18 22 dB including ceramic filter K1 Vin4 IF sensitivity S2 in position B; − 20 30 µV V13 = −3 dB V13 AF output voltage Vin3 = 1 mV 47 58 69 mV THD total harmonic distortion Vin3 = 1 mV; − 0.3 0.8 % ∆f = 22.5 kHz Vin3 large signal handling THD ≤ 5% − 500 − mV IIND indicator current Vin4 = 100 mV; 2 3.5 6 mA S2 in position B IINDOFF indicator OFF current Vin4 = 0 V; − 0 10 µA S2 in position B March 1994 12, handbook, full pagewidth March 1994 13 Vin1 L2 L3 L4L8 18 22 8.2 40 µH pF pF pF Rg 43 Ω (50 Ω) FM-RF FM-OSC AM-OSC1VMHz 6.8 Ω 680 pF

P

CQS54 10 FM AM 10 nF nF 100 V10 p µF µF

AF

24 23 22 21 20 19 18 17 16 15 14 13 TEA5710 TEA5710T Vin312345678910 11 12 Rg 27Ω1nF K3 (50 Ω) S1 S2 100 560 Ω 91 Ω MHzABK1ABK2 L6 MGE108 L5 Rg 220nF 3 kΩ Rg 330 Ω (50 Ω) (50 Ω) 468 50 Ω 10.7 Vin2 VkHz MHz in4 50 Ω to pin 5 Fig.4 Test circuit., APPLICATION INFORMATION handbook, full pagewidth March 1994 141221Ca Cb C6 Cc C7 Cd C8 140 18 20 22 80 8.2 CTa 20 CTb CTc CTd L1 pF pF pF pF pF pF28pF L2 pF18pF L318pF L438pF C11 AM-RFI FM-RFI FM-OSC AM-OSC V 3V 100 µFP

HP

C4 C10 LED FM AM 32 Ω 10 nF 100 CQS54 C5 µF10 ON R1 R2 C2 C3 nF OFF 10 Ω 10 Ω 100 µF 10 µF

VP AF

24 23 22 21 20 19 18 17 16 15 14 138765TEA5710 TDA7050T TEA5710T12345678910 11 121234C1 4.7 1 nF61C9 K1 L6 K2 K3 100 nF CO 2 222 L7 CDA10.7MC404 3 MGE107 pF 60 nH 3 P1 L5 SFE10.7MS3 SFE10.7MS2 4.7 kΩ Fig.5 Application circuit of TEA5710 (AM: 522 to 1611 kHz, FM: 87.5 to 108 MHz) with stereo headphone amplifier TDA7050T., handbook, full pagewidth MGE109 Fig.6 Printed-circuit board layout (track side) for application circuit of Fig.5. March 1994 15, handbook, full pagewidth ANT GND 100MHz 6.8 1MHz L1 C1 680 40 µH 43 C12 C2 4.7 27 C4 91 L2 R2 C3 HP 1K1 PLUG L5 C7 ANT R3FAC11MML6 C8 C5 OSC C9 K2 K3 C6 L3 L4 LED 1.5 V C10 1.5 V MGE110 Fig.7 Printed-circuit board layout (component side) for application circuit of Fig.5. March 1994 16 TEA5710 GND AF, Components for Figs 4 and 5 Coils L1 AM-AERIAL ferroceptor length = 6 cm L1-2 = 625 µH N1-2 = 105 turns L2 FM-RF L1-2 = 66 nH N1-2 = 2.5 turns unloaded Q = 150 TOKO type S18 TOKO no. 301SS-0200 L3 FM-OSC L1-2 = 40 nH N1-2 = 1.5 turns unloaded Q = 150 TOKO type S18 TOKO no. 301SS-0100 L4 AM-OSC L1-3 = 270 µH N1-2 = 18 N2-3 = 70 3 unloaded Q = 100 2 L4 wire diameter 0.07 mm1SMGE133 TOKO type 7P material TOKO 7BRS L5 AM-IF1 L1-3 = 625 µH N1-2 = 17 turns N2-3 = 141 turnsS34N4-6 = 10 turns C1-3 = 180 pF unloaded Q = 90 1 6S L5 MGE134 wire diameter 0.07 mm TOKO type 7P material TOKO 7MCS L6 AM-IF2 L1-3 = 625 µH N1-2 = 28 turns N2-3 = 130 turns 3 C1-3 = 180 pF 2 L6 unloaded Q = 90 wire diameter 0.07 mm S MGE135 TOKO type 7P material TOKO 7MCS March 1994 17, L7 FM-AERIAL print-coil L1-2 = 60 nH N1-2 = 2.5 turns L8 AM-RF test circuit only: L1-3 = 40 µH N1-3 = 34 turns 3 unloaded Q = 85 L8 wire diameter 0.09 mm TOKO type 7P S MGE136 material TOKO 7BRS Ceramic filters K1 FM-IF1 Murata SFE 10.7 MS 3 K2 FM-IF2 Murata SFE 10.7 MS 2 K3 FM-DET Murata CDA 10.7 MC 40 Capacitors C1 VARICON AM: 140/82 pF FM: 2 × 20 pF trimmer: 4 × 8 pF TOKO type no. HU-22124 Application notes 1. Short circuiting: all pins are short-circuit proof except pin 1 (FM-RFI) with respect to the supply voltage pin. 2. Tuning indicator (at pin 15, IND): connect either a tuning indicator (e.g. a LED) between this pin and the supply voltage (pin 16) or connect the pin IND to ground. 3. For an example of PC-board layout: see Figs 6 and 7. March 1994 18, MGE11107handbook, full pagewidth VAF (dB) signal level (mA) 0 dB = 45 mV m = 0.3 THD (%) −10 6 −20 level 5 − noise 30 m = 0 4 −40 3 −50 2 −60 1

THD

m = 0.3 −70 0 10−1 1 10 102 103 104 105 106 Vin1 (µV) Fig.8 Typical AM audio output voltage (VAF; signal at m = 0.3), noise, THD (at m = 0.3) and indicator current (level) as a function of RF input voltage (Vin1; f = 1 kHz). Measured in test circuit of Fig.4 with VP = 3.0 V. March 1994 19, MGE112 handbook, full pagewidth 7 VAF (dB) signal level (mA) 0 dB = 45 mV m = 0.3 THD (%) −10 6 −20 noise5m= 0 −30 level 4 −40 3 −50 2 −60 1

THD

m = 0.3 −700110 102 103 104 105 106 107 field-strength (µV) Fig.9 Typical AM audio output voltage (VAF; signal at m = 0.3), noise, THD (at m = 0.3) and indicator current (level) as a function of field-strength (f = 1 kHz). Measured at 1 MHz in application circuit of Fig.5 with VP = 3 V. March 1994 20, MGE11307handbook, full pagewidth V (dB) signalAF ind (mA) 0 dB = 65 mV THD (%) −10 6 −20 5 −30 4 noise ind −40 3 −50 2

THD

22.5 kHz −60 1 −70 0 10−1 1 10 102 103 104 105 106 Vin3 (µV) Fig.10 Typical FM audio output voltage (VAF; signal), noise, THD and indicator current (ind) as a function of RF input voltage (Vin3; df = 22.5 kHz). Measured in test circuit of Fig.4 at VP = 3 V. March 1994 21, PACKAGE OUTLINES SDIP24: plastic shrink dual in-line package; 24 leads (400 mil) SOT234-1 D ME A2ALA1cZewM(e 1 ) b1

MH

b 24 13 pin 1 index

E

1 120510 mm scale DIMENSIONS (mm are the original dimensions) AA1A2(1) (1) (1)UNIT max. min. max. b b1cDEee1LMM

Z

EHwmax. mm 4.7 0.51 3.8 1.3 0.53 0.32 22.3 9.1 3.2 10.7 12.2 0.8 0.40 0.23 21.4 8.7 1.778 10.16 2.8 10.2 10.5 0.18 1.6 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE REFERENCES EUROPEAN VERSION ISSUE DATE IEC JEDEC EIAJ PROJECTION 92-11-17 SOT234-1 95-02-04 March 1994 22 seating plane,

SO24: plastic small outline package; 24 leads; body width 7.5 mm SOT137-1

DEA

X

c y HEvMA

Z

24 13

Q

A2 A (A )

A

1 3 pin 1 index θ Lp

L

1 12 detailXewMbp0510 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A

UNIT (1) (1) (1)max. A1 A2 A3 bpcDEeHE L LpQvwyZθmm 2.65 0.30 2.45 0.49 0.32 15.6 7.6 10.65 1.1 1.1 0.9 0.10 2.25 0.25 0.36 0.23 15.2 7.4 1.27 10.00 1.4 0.4 1.0 0.25 0.25 0.1 0.4 8o o inches 0.10 0.012 0.096 0.019 0.013 0.61 0.30 0.42 0.043 0.043 0.035 0.004 0.089 0.01 0.014 0.009 0.60 0.29 0.050 0.39 0.055 0.016 0.039 0.01 0.01 0.004 0.016 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE REFERENCES EUROPEAN VERSION IEC JEDEC EIAJ PROJECTION ISSUE DATE 92-11-17 SOT137-1 075E05 MS-013AD 95-01-24

March 1994 23

, SOLDERING Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary Introduction between 50 and 300 seconds depending on heating There is no soldering method that is ideal for all IC method. Typical reflow temperatures range from packages. Wave soldering is often preferred when 215 to 250 °C. through-hole and surface mounted components are mixed Preheating is necessary to dry the paste and evaporate on one printed-circuit board. However, wave soldering is the binding agent. Preheating duration: 45 minutes at not always suitable for surface mounted ICs, or for 45 °C. printed-circuits with high population densities. In these situations reflow soldering is often used. WAVE SOLDERING This text gives a very brief insight to a complex technology. Wave soldering techniques can be used for all SO A more in-depth account of soldering ICs can be found in packages if the following conditions are observed: our “IC Package Databook” (order code 9398 652 90011). • A double-wave (a turbulent wave with high upward SDIP pressure followed by a smooth laminar wave) soldering technique should be used. SOLDERING BY DIPPING OR BY WAVE • The longitudinal axis of the package footprint must be The maximum permissible temperature of the solder is parallel to the solder flow. 260 °C; solder at this temperature must not be in contact • The package footprint must incorporate solder thieves at with the joint for more than 5 seconds. The total contact the downstream end. time of successive solder waves must not exceed 5 seconds. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be The device may be mounted up to the seating plane, but applied by screen printing, pin transfer or syringe the temperature of the plastic body must not exceed the dispensing. The package can be soldered after the specified maximum storage temperature (Tstg max). If the adhesive is cured. printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the Maximum permissible solder temperature is 260 °C, and temperature within the permissible limit. maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within REPAIRING SOLDERED JOINTS 6 seconds. Typical dwell time is 4 seconds at 250 °C. Apply a low voltage soldering iron (less than 24 V) to the A mildly-activated flux will eliminate the need for removal lead(s) of the package, below the seating plane or not of corrosive residues in most applications. more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in REPAIRING SOLDERED JOINTS contact for up to 10 seconds. If the bit temperature is Fix the component by first soldering two diagonally- between 300 and 400 °C, contact may be up to 5 seconds. opposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact SO time must be limited to 10 seconds at up to 300 °C. When REFLOW SOLDERING using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between Reflow soldering techniques are suitable for all SO 270 and 320 °C. packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. March 1994 24,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1994 25]

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