Download: ON Semiconductor 2N5550 Amplifier Transistors NPN Silicon 2N5551*

ON Semiconductor 2N5550 Amplifier Transistors NPN Silicon 2N5551* *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector–Emitter Voltage VCEO 140 160 Vdc Collector–Base Voltage VCBO 160 180 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 600 mAdc23Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C CASE 29–11, STYLE 1 Total Device Dissipation @ TC = 25°C PD 1.5 Watts TO–92 (TO–226AA) Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range COLLECTOR THERMAL CHARACTER...
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ON Semiconductor

2N5550

Amplifier Transistors NPN Silicon 2N5551*

*ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector–Emitter Voltage VCEO 140 160 Vdc Collector–Base Voltage VCBO 160 180 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 600 mAdc23Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C CASE 29–11, STYLE 1 Total Device Dissipation @ TC = 25°C PD 1.5 Watts TO–92 (TO–226AA) Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range COLLECTOR THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 2 Thermal Resistance, Junction to Ambient R 200 °C/W BASEJA Thermal Resistance, Junction to Case RJC 83.3 °C/W

EMITTER

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) 2N5550 140 — 2N5551 160 — Collector–Base Breakdown Voltage V(BR)CBO Vdc (IC = 100 µAdc, IE = 0 ) 2N5550 160 — 2N5551 180 — Emitter–Base Breakdown Voltage V(BR)EBO 6.0 — Vdc (IE = 10 µAdc, IC = 0) Collector Cutoff Current ICBO (VCB = 100 Vdc, IE = 0) 2N5550 — 100 nAdc (VCB = 120 Vdc, IE = 0) 2N5551 — 50 (VCB = 100 Vdc, IE = 0, TA = 100°C) 2N5550 — 100 µAdc (VCB = 120 Vdc, IE = 0, TA = 100°C) 2N5551 — 50 Emitter Cutoff Current IEBO — 50 nAdc (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: June, 2001 – Rev. 1 2N5550/D, ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1) DC Current Gain hFE — (IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5550 60 — 2N5551 80 — (IC = 10 mAdc, VCE = 5.0 Vdc) 2N5550 60 250 2N5551 80 250 (IC = 50 mAdc, VCE = 5.0 Vdc) 2N5550 20 — 2N5551 30 — Collector–Emitter Saturation Voltage VCE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) Both Types — 0.15 (IC = 50 mAdc, IB = 5.0 mAdc) 2N5550 — 0.25 2N5551 — 0.20 Base–Emitter Saturation Voltage VBE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) Both Types — 1.0 (IC = 50 mAdc, IB = 5.0 mAdc) 2N5550 — 1.2 2N5551 — 1.0 SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product fT 100 300 MHz (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance Cobo — 6.0 pF (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance Cibo pF (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N5550 — 30 2N5551 — 20 Small–Signal Current Gain hfe 50 200 — (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure NF dB (IC = 250 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, 2N5550 — 10 f = 1.0 kHz) 2N5551 — 8.0 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. ° V = 1.0 VTJ = 125 C CE 200 VCE = 5.0 V 25°C -55°C 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current GainhFE, DC CURRENT GAIN, 1.0 0.9 0.8 0.7 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.5 0.4 0.3 0.2 0.1 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IB, BASE CURRENT (mA) Figure 2. Collector Saturation Region VCE = 30VT= 125°C 10-1 J IC = ICES 10-2 75°C 10-3 REVERSE FORWARD 25°C 10-4 10-5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 3. Collector Cut–Off Region 1.0 2.5 TJ = 25°C 2.0 TJ = -55°C to +135°C 0.8 1.5 V 1.0BE(sat) @ IC/IB = 10 0.6 0.5 VC for VCE(sat) 0.4 -0.5 -1.0 VB for VBE(sat) 0.2 -1.5 VCE(sat) @ IC/IB = 10 -2.0 0 -2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 4. “On” Voltages Figure 5. Temperature Coefficients V, VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (µA) θV, TEMPERATURE COEFFICIENT (mV/°C), 70 TJ = 25°C 10.2 V VBB VCC -8.8 V 30 V 20 Vin 100 3.0 k RC 10 10 µs 0.25 µF R 7.0 Cibo

B

INPUT PULSE Vout 5.0 5.1 k 3.0 Cobo tr, tf ≤ 10 ns Vin 100 1N914 DUTY CYCLE = 1.0% 2.0 1.0 Values Shown are for I @ 10 mA 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20C VR, REVERSE VOLTAGE (VOLTS) Figure 6. Switching Time Test Circuit Figure 7. Capacitances 1000 5000 IC/IB = 10 tf @ VCC = 120 V IC/IB = 10 ° 3000500 TJ = 25 C TJ = 25°C tr @ VCC = 120 V300 tf @ VCC = 30 V 200 1000 tr @ VCC = 30 V 100 500 300 t @ V = 120 V 50 td @ VEB(off) = 1.0VsCC 30 VCC = 120 V 20 100 10 50 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Turn–On Time Figure 9. Turn–Off Time t, TIME (ns) t, TIME (ns) C, CAPACITANCE (pF),

PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL

NOTES:

A B 1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R

R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

P BEYOND DIMENSION K MINIMUM. L

SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533

XXDG0.045 0.055 1.15 1.39 G H 0.095 0.105 2.42 2.66 J J 0.015 0.020 0.39 0.50H K 0.500 - 12.70 - V L 0.250 - 6.35 -C N 0.080 0.105 2.04 2.66 SECTION X–X P - 0.100 - 2.54

1NR0.115 - 2.93 - V 0.135 - 3.43 -

N

YLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR,

Notes

,

Notes

, ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

Literature Fulfillment: JAPAN: ON Semiconductor, Japan Customer Focus Center Literature Distribution Center for ON Semiconductor 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 P.O. Box 5163, Denver, Colorado 80217 USA Phone: 81–3–5740–2700 Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Email: email is hidden Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: email is hidden ON Semiconductor Website: http://onsemi.com For additional information, please contact your local N. American Technical Support: 800–282–9855 Toll Free USA/Canada Sales Representative. http://onsemi.com 2N5550/D]
15

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