Download: GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO92 variant PIN CONFIGURATION SYMBOL

GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated sensitive gate SYMBOL PARAMETER MAX. UNIT thyristor in a plastic envelope, intended for use in general purpose VDRM, Repetitive peak off-state voltages 200 V switching and phase control VRRM applications. This device is intended IT(AV) Average on-state current 0.5 A to be interfaced directly to IT(RMS) RMS on-state current 0.8 A microcontrollers, logic integreated ITSM Non-repetitive peak on-state current 10 A circuits and other low power gate trigger circuits. PINNING - TO92 variant PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 anodeak2ga...
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GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated sensitive gate SYMBOL PARAMETER MAX. UNIT thyristor in a plastic envelope, intended for use in general purpose VDRM, Repetitive peak off-state voltages 200 V switching and phase control VRRM applications. This device is intended IT(AV) Average on-state current 0.5 A to be interfaced directly to IT(RMS) RMS on-state current 0.8 A microcontrollers, logic integreated ITSM Non-repetitive peak on-state current 10 A circuits and other low power gate trigger circuits.

PINNING - TO92 variant PIN CONFIGURATION SYMBOL

PIN DESCRIPTION 1 anodeak2gate 3 cathodeg321

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM, VRRM Repetitive peak off-state - 200 V voltages IT(AV) Average on-state current half sine wave Tc ≤ 67 ˚C - 0.51 A Tc ≤ 102 ˚C - 0.255 A IT(RMS) RMS on-state current all conduction angles - 0.8 A ITRM Repetitive peak on-state - 8 A current ITSM Non-repetitive peak half sine wave; Ta = 25 ˚C prior to surge; with - 10 A on-state current reapplied VDRM(max); t = 8.3 ms I2t I2t for fusing t = 8.3 ms - 0.4 A2s IGM Peak gate current Ta = 25˚C, tp = 300µs; f = 120 Hz - 1 A VGM Peak gate voltage - 5 V VRGM Peak reverse gate voltage - 5 V PGM Peak gate power Ta = 25˚C - 0.1 W PG(AV) Average gate power Ta = 25˚C, over any 16 ms period - 0.01 W Tstg Storage temperature -65 150 ˚C Tj Operating junction -65 125 ˚C temperature February 1996 1 Rev 1.100,

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R 1th j-c Thermal resistance see note: - - 75 K/W junction to case Rth j-a Thermal resistance - 200 - K/W junction to ambient

STATIC CHARACTERISTICS

Tc = 25 ˚C, RGK = 1 kΩ unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IGT Gate trigger current Tc = 25 ˚C - - 200 µA Tc = -65 ˚C - - 350 µA VD = VDRM(max); RL = 100 Ω; gate open circuit IL Latching current VD = 12 V; RGK = 1 kΩ - - 6 mA IH Holding current VD = 12 V; RGK = 1 kΩ - - 5 mA VT On-state voltage IT = 1.2 A peak; tp = 300 µs; δ ≤ 0.01 - - 1.7 V VGT Gate trigger voltage Tj = 25 ˚C - - 0.8 V Tj = -65 ˚C - - 1.2 V Tj = 125 ˚C 0.1 - - V VD = VDRM(max); RL = 100 Ω; gate open circuit ID, IR Off-state leakage current VD = VDRM(max); VR = VRRM(max) Tj = 25 ˚C - - 10 µA Tj = 125 ˚C - - 50 µA

DYNAMIC CHARACTERISTICS

Tc = 25 ˚C, RGK = 1 kΩ unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; - 25 - V/µs off-state voltage exponential waveform; RGK = 1 kΩ tgt Gate controlled turn-on ITM = 2 A; VD = VDRM(max); IG = 10 mA; - 2 - µs time dIG/dt = 0.1 A/µs tq Circuit commutated VDM = 67% VDRM(max); Tj = 125 ˚C; - 100 - µs turn-off time ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/µs; dVD/dt = 2 V/µs; RGK = 1 kΩ 1 This measurement is made with the case mounted "flat side down" on a heatsink and held in position by means of a metal clamp over the curved surface. February 1996 2 Rev 1.100, MECHANICAL DATA Dimensions in mm 2.54 Net Mass: 0.2 g 0.66 0.56 1.6 4.8 max 4.2 max 5.2 max 2.5 max 12.7 min 0.48 0.403210.40 min Fig.1. TO92; plastic envelope. Notes 1. Epoxy meets UL94 V0 at 1/8". February 1996 3 Rev 1.100,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1996 4 Rev 1.100]
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