Download: N-Channel JFETs

N-Channel JFETs 2N4117A PN4117A SST4117 2N4118A PN4118A SST4118 2N4119A PN4119A SST4119 Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (S) IDSS Min (A) 4117 –0.6 to –1.8 –40 70 30 4118 –1 to –3 –40 80 80 4119 –2 to –6 –40 100 200 Ultra-Low Leakage: 0.2 pA Insignificant Signal Loss/Error Voltage High-Impedance Transducer Very Low Current/Voltage Operation with High-Impedance Source Amplifiers Ultrahigh Input Impedance Low Power Consumption (Battery) Smoke Detector Input Low Noise Maximum Signal Output, Low Noise Infrared Detector Amplifier High Sensitivity to Low-Level Signals Precisi...
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N-Channel JFETs

2N4117A PN4117A SST4117 2N4118A PN4118A SST4118 2N4119A PN4119A SST4119 Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (S) IDSS Min (A) 4117 –0.6 to –1.8 –40 70 30 4118 –1 to –3 –40 80 80 4119 –2 to –6 –40 100 200 Ultra-Low Leakage: 0.2 pA Insignificant Signal Loss/Error Voltage High-Impedance Transducer Very Low Current/Voltage Operation with High-Impedance Source Amplifiers Ultrahigh Input Impedance Low Power Consumption (Battery) Smoke Detector Input Low Noise Maximum Signal Output, Low Noise Infrared Detector Amplifier High Sensitivity to Low-Level Signals Precision Test Equipment The 2N/PN/SST4117A series of n-channel JFETs provide The hermetically sealed TO-206AF package allows full ultra-high input impedance. These devices are specified with military processing per MIL-S-19500 (see Military a 1-pA limit and typically operate at 0.2 pA. This makes them Information). The TO-226A (TO-92) plastic package provides perfect choices for use as high-impedance sensitive front-end a low-cost option. The TO-236 (SOT-23) package provides amplifiers. surface-mount capability. Both the PN and SST series are available in tape-and-reel for automated assembly (see Packaging Information). TO-206AF TO-226AA TO-236 (TO-72) (TO-92) (SOT-23) SCD14D1S23GS223GDGTop View Top View Top View 2N4117A PN4117A SST4117 (T7)* 2N4118A PN4118A SST4118 (T8)* 2N4119A PN4119A SST4119 (T9)* *Marking Code for TO-236 For applications information see AN105. S-04028—Rev. F, 04-Jun-01 7-1, Gate-Source/Gate-Drain Voltage .–40V Lead Temperature (1/16” from case for 10 sec.) .300C Forward Gate Current .50 mA Power Dissipation (case 25C) : (2N Prefix)a .300 mW Storage Temperature : (2N Prefix) .–65 to 175C (PN, SST Prefix)b .350 mW (PN, SST Prefix) .–55 to 150C Operating Junction Temperature : Notes (2N Prefix) .–55 to 175C a. Derate 2 mW/C above 25C (PN, SST Prefix) .–55 to 150C b. Derate 2.8 mW/C above 25C

Limits

4117 4118 4119

Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit Static

Gate-Source Breakdown Voltage V(BR)GSS IG = –1 A , VDS = 0 V –70 –40 –40 –40 V Gate-Source Cutoff Voltage VGS(off) VDS = 10 V, ID = 1 nA –0.6 –1.8 –1 –3 –2 –6 Saturation Drain Current IDSS VDS = 10 V, VGS = 0 V 30 90 80 240 200 600 A VGS = –20VV= 0 V –0.2 –1 –1 –1 pADS VGS = –20 V 2N VDS = 0 V –0.4 –2.5 –2.5 –2.5 nA TA = 150C Gate Reverse Current IGSS PN –0.2 –1 –1 –1 VDS = 0 V pA SST –0.2 –10 –10 –10 VDS = 0 V PN/SST –0.03 –2.5 –2.5 –2.5 nA TA = 100C Gate Operating Currentb IG VDG = 15 V, ID = 30 A –0.2 pA Drain Cutoff Currentb ID(off) VDS = 10 V, VGS = –8 V 0.2 Gate-Source Forward Voltageb VGS(F) IG = 1 mA , VDS = 0 V 0.7 V

Dynamic

Common-Source Forward Transconductance gfs 70 210 80 250 100 330VDS = 10 V, VGS = 0Vf= 1 kHz SCommon-Source Output Conductance gos3510 Common-Source 2N/PN 1.2333Input Capacitance Ciss VDS = 10 V SST 1.2 VGS = 0 V pF Common-Source f = 1 MHz 2N/PN 0.3 1.5 1.5 1.5 Reverse Transfer Capacitance Crss SST 0.3 Equivalent Input Noise Voltageb e VDS = 10 V, VGS = 0 V nV⁄n f = 1 kHz 15 √Hz Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NT b. This parameter not registered with JEDEC. 7-2 S-04028—Rev. F, 04-Jun-01, Drain Current and Transconductance vs. Gate-Source Cutoff Voltage Gate Leakage Current 1000 300 1 nA IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V 100 mA VGS(off) = –2.5Vf= 1 kHz 800 240 100 pA T = 125 C 10 mAA IGSS @ 125C 600 180 gfs 10 pA 100 mA 400 120 10 mA

IDSS

1 pA IGSS @ 25C200 60 TA = 25C000.1 pA 0 –1 –2 –3 –4 –50612 18 24 30 VGS(off) – Gate-Source Cutoff Voltage (V) VDG – Drain-Gate Voltage (V) On-Resistance and Output Conductance Common-Source Forward Transconductance vs. Gate-Source Cutoff Voltage vs. Drain Current 15 5 200 gos 12 4 160 rDS93120 25C6280 3 rDS @ ID = 10 mA, VGS = 0V140 gos @ VDS = 10 V, VGS = 0 V VDS = 10Vf= 1 kHz f = 1 kHz0000–1 –2 –3 –4 –5 0.01 0.1 1 VGS(off) – Gate-Source Cutoff Voltage (V) ID – Drain Current (mA) Output Characteristics Output Characteristics 100 500 VGS(off) = –0.7 V VGS(off) = –2.5 V 80 400 60 –0.1 V 300 –0.2 V –0.5 V 40 200 –0.3 V –1.0 V –0.4 V 20 100 –1.5 V –0.5 V –2.0V04812 16 2004812 16 20 VDS – Drain-Source Voltage (V) VDS – Drain-Source Voltage (V) S-04028—Rev. F, 04-Jun-01 7-3 ID – Drain Current (µA) rDS(on) – Drain-Source On-Resistance ( Ω ) IDSS – Saturation Drain Current (µA) ID – Drain Current (µA) gfs – Forward Transconductance (µS) IG – Gate Leakage gfs – Forward Transconductance (µS) gos – Output Conductance (µS), Transfer Characteristics Transconductance vs. Gate-Source Voltage 100 200 VGS(off) = –0.7 V VDS = 10 V VGS(off) = –0.7 V VDS = 10Vf= 1 kHz 80 160 TA = –55C 25C 60 120 TA = 125C 40 25C 80 125C 20 40 –55C000–0.2 –0.4 –0.6 –0.8 –1.0 0 –0.2 –0.4 –0.6 –0.8 –1.0 VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V) Transfer Characteristics Transconductance vs. Gate-Source Voltage 500 300 VGS(off) = –2.5 V VDS = 10 V VGS(off) = –2.5 V VDS = 10 V 400 240 300 180 25C 200 120 100 125C 60 0 –1 –2 –3 –4 –5 0 –1 –2 –3 –4 –5 VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V) Common-Source Input Capacitance Circuit Voltage Gain vs. Drain Current vs. Gate-Source Voltage 100 2.0 gfs RL f = 1 MHz AV 1 RLgos 80 Assume VDD = 15 V, VDS = 5 V 1.6 R 10 VL ID 60 1.2 VDS = 0 V VGS(off) = –0.7 V 10 V 40 0.8 20 0.4 –2.5 V 0.01 0.110–4 –8 –12 –16 –20 ID – Drain Current (mA) VGS – Gate-Source Voltage (V) 7-4 S-04028—Rev. F, 04-Jun-01 AV – Voltage Gain ID – Drain Current (µA) ID – Drain Current (µA) Ciss – Input Capacitance (pF) gfs – Forward Transconductance (µS) gfs – Forward Transconductance (µS), Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage Equivalent Input Noise Voltage vs. Frequency 0.5 200 f = 1 MHz VDS = 10 V 0.4 160 0.3 120 ID = 10 mAVDS = 0 V 0.2 80 10 V VGS = 0 V 0.1 4000100k0–4 –8 –12 –16 –20 10 1001k10 k VGS – Gate-Source Voltage (V) f – Frequency (Hz) Output Conductance vs. Drain Current On-Resistance vs. Drain Current 2 20 VGS(off) = –0.7VV= 10 V –2.5 VDS TA = 25C 0.01 0.1 1 0.01 0.1 1 ID – Drain Current (mA) ID – Drain Current (mA) S-04028—Rev. F, 04-Jun-01 7-5 gos – Output Conductance (µS) Crss – Reverse Feedback Capacitance (pF) rDS(on) – Drain-Source On-Resistance ( Ω ) en – Noise Voltage nV / Hz]
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