Download: Order this document SEMICONDUCTOR TECHNICAL DATA by 2N3903/D NPN Silicon

Order this document SEMICONDUCTOR TECHNICAL DATA by 2N3903/D NPN Silicon *Motorola Preferred Device COLLECTOR BASE EMITTER 1 MAXIMUM RATINGS Rating Symbol Value Unit CASE 29–04, STYLE 1 TO–92 (TO–226AA) Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 200 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTIC...
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Order this document SEMICONDUCTOR TECHNICAL DATA by 2N3903/D NPN Silicon

*Motorola Preferred Device

COLLECTOR BASE

EMITTER 1 MAXIMUM RATINGS Rating Symbol Value Unit CASE 29–04, STYLE 1 TO–92 (TO–226AA) Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 200 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS(1) Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 °C/W Thermal Resistance, Junction to Case RJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (2) V(BR)CEO 40 — Vdc (IC = 1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage V(BR)CBO 60 — Vdc (IC = 10 Adc, IE = 0) Emitter–Base Breakdown Voltage V(BR)EBO 6.0 — Vdc (IE = 10 Adc, IC = 0) Base Cutoff Current IBL — 50 nAdc (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current ICEX — 50 nAdc (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. Indicates Data in addition to JEDEC Requirements. 2. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data 1 Motorola, Inc. 1996, ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain(1) hFE — (IC = 0.1 mAdc, VCE = 1.0 Vdc) 2N3903 20 — 2N3904 40 — (IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N3903 35 — 2N3904 70 — (IC = 10 mAdc, VCE = 1.0 Vdc) 2N3903 50 150 2N3904 100 300 (IC = 50 mAdc, VCE = 1.0 Vdc) 2N3903 30 — 2N3904 60 — (IC = 100 mAdc, VCE = 1.0 Vdc) 2N3903 15 — 2N3904 30 — Collector–Emitter Saturation Voltage(1) VCE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) — 0.2 (IC = 50 mAdc, IB = 5.0 mAdc — 0.3 Base–Emitter Saturation Voltage(1) VBE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) 0.65 0.85 (IC = 50 mAdc, IB = 5.0 mAdc) — 0.95 SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product fT MHz (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N3903 250 — 2N3904 300 — Output Capacitance Cobo — 4.0 pF (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance Cibo — 8.0 pF (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance hiekΩ(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 1.0 8.0 2N3904 1.0 10 Voltage Feedback Ratio hre X 10–4 (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 0.1 5.0 2N3904 0.5 8.0 Small–Signal Current Gain hfe — (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 50 200 2N3904 100 400 Output Admittance hoe 1.0 40 mhos (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure NF dB (IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k Ω, f = 1.0 kHz) 2N3903 — 6.0 2N3904 — 5.0 SWITCHING CHARACTERISTICS Delay Time (V = 3.0 Vdc, V = 0.5 Vdc, td — 35 nsCC BE Rise Time IC = 10 mAdc, IB1 = 1.0 mAdc) tr — 35 ns Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc, 2N3903 ts — 175 ns IB1 = IB2 = 1.0 mAdc) 2N3904 — 200 Fall Time tf — 50 ns 1. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data, +3 V +3 V DUTY CYCLE = 2% 10 < t1 < 500 s t1 300 ns +10.9 V+10.9 V 275 DUTY CYCLE = 2% 275 10 k 10 k – 0.5 V < 1 ns CS < 4 pF* 1N916 CS < 4 pF* – 9.1 V′ < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time Equivalent Test Circuit Equivalent Test Circuit

TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25°C TJ = 125°C 10 5000 3000 VCC = 40 V 7.0 IC/IB = 10 5.0 C 700ibo 3.0 500 300 QT 2.0 Cobo 200

QA

1.0 50 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 3. Capacitance Figure 4. Charge Data Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 CAPACITANCE (pF) Q, CHARGE (pC), 500 500 IC/IB = 10300 300 VCC = 40 V IC/IB = 10200 200 100 100 70 tr @ VCC = 3.0 V 70 50 50 30 30 40 V 20 20 15 V 10 10 7 td @ VOB = 0 V 2.0V7551.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn–On Time Figure 6. Rise Time 500 500 t′s = ts – 1/8 tf 300 I = I 300 VCC = 40 V

I

200 C /IB = 20 IC/IB = 10 B1 B2 IB1 = I200 B2 IC/IB = 20 100 100 70 70 50 IC/IB = 20 50 30 IC/IB = 10 30 IC/IB = 10 20 20 10 1077551.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time

TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS

(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 12 14 SOURCE RESISTANCE = 200 f = 1.0 kHz IC = 1.0 mA 10 IC = 1.0 mA 12 I = 0.5 mA 8 SOURCE RESISTANCE = 200 10 C IC = 0.5 mA IC = 50A6SOURCE RESISTANCE = 1.0 k IC = 100 A IC = 50A62SOURCE RESISTANCE = 500 2 IC = 100A000.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 9. Figure 10. 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data NF, NOISE FIGURE (dB) t s′ , STORAGE TIME (ns) TIME (ns) NF, NOISE FIGURE (dB) t f , FALL TIME (ns) t r , RISE TIME (ns), h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C) 300 100 70 5 30 1 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. Current Gain Figure 12. Output Admittance 20 10 10 7.0 5.0 5.0 3.0 2.0 2.0 1.0 1.0 0.5 0.7 0.2 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio

TYPICAL STATIC CHARACTERISTICS

2.0 TJ = +125°C VCE = 1.0 V 1.0 +25°C 0.7 0.5 – 55°C 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 15. DC Current Gain Motorola Small–Signal Transistors, FETs and Diodes Device Data5hFE, DC CURRENT GAIN (NORMALIZED) hie, INPUT IMPEDANCE (k OHMS) hfe, CURRENT GAINhre, VOLTAGE FEEDBACK RATIO (X 10 – 4 ) ho e , OUTPUT ADMITTANCE ( mhos), 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 16. Collector Saturation Region 1.2 1.0 TJ = 25°C 1.0 VBE(sat) @ IC/IB =10 0.5 +25°C TO +125°C VC FOR VCE(sat) 0.8 0 – 55°C TO +25°C VBE @ VCE =1.0 V 0.6 – 0.5 – 55°C TO +25°C 0.4 – 1.0 VCE(sat) @ IC/IB =10 +25°C TO +125°C 0.2 – 1.5 VB FOR VBE(sat) 0 – 2.0 1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. “ON” Voltages Figure 18. Temperature Coefficients 6 Motorola Small–Signal Transistors, FETs and Diodes Device Data V, VOLTAGE (VOLTS) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) COEFFICIENT (mV/ ° C),

PACKAGE DIMENSIONS

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI

A B Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

R 4. DIMENSION F APPLIES BETWEEN P AND L.

DIMENSION D AND J APPLY BETWEEN L AND K

P MINIMUM. LEAD DIMENSION IS UNCONTROLLED

IN P AND BEYOND DIMENSION K MINIMUM.

L

SEATING F PLANE K INCHES MILLIMETERS DIM MIN MAX MIN MAX

D A 0.175 0.205 4.45 5.20B 0.170 0.210 4.32 5.33

C 0.125 0.165 3.18 4.19

XXJD0.016 0.022 0.41 0.55 G F 0.016 0.019 0.41 0.48G 0.045 0.055 1.15 1.39 H H 0.095 0.105 2.42 2.66 SECTION X–X J 0.015 0.020 0.39 0.50VCK0.500 ––– 12.70 –––

L 0.250 ––– 6.35 ––– N 0.080 0.105 2.04 2.661NP––– 0.100 ––– 2.54 R 0.115 ––– 2.93 –––

N V 0.135 ––– 3.43 –––

STYLE 1:

CASE 029–04 PIN 1. EMITTER

(TO–226AA) 2. BASE3. COLLECTOR

ISSUE AD Motorola Small–Signal Transistors, FETs and Diodes Device Data 7

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, P.O. Box 5405; Denver, Colorado 80217. 1–800–441–2447 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315 MFAX: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 8 ◊ Motorola Small–Signal Transistors, FETs and Diodes Dev2icNe3 D90a3t/aD]
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