Download: DISCRETE SEMICONDUCTORS DATA SHEET 2N2222; 2N2222A NPN switching transistors Product specification 1997 May 29 Supersedes data of September 1994 File under Discrete Semiconductors, SC04

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2222; 2N2222A NPN switching transistors Product specification 1997 May 29 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 FEATURES PINNING • High current (max. 800 mA) PIN DESCRIPTION • Low voltage (max. 40 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to case • Linear amplification and switching. DESCRIPTION handbook, halfpa1ge 3 NPN switching transistor in a TO-18 metal package. PNP complement: 2N2907A. 2 3 MAM264 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN....
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DISCRETE SEMICONDUCTORS

DATA SHEET

M3D125 2N2222; 2N2222A

NPN switching transistors

Product specification 1997 May 29 Supersedes data of September 1994 File under Discrete Semiconductors, SC04, FEATURES PINNING • High current (max. 800 mA) PIN DESCRIPTION • Low voltage (max. 40 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to case • Linear amplification and switching. DESCRIPTION handbook, halfpa1ge 3 NPN switching transistor in a TO-18 metal package. PNP complement: 2N2907A. 2 3 MAM264 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 2N2222 − 60 V 2N2222A − 75 V VCEO collector-emitter voltage open base 2N2222 − 30 V 2N2222A − 40 V IC collector current (DC) − 800 mA Ptot total power dissipation Tamb ≤ 25 °C − 500 mW hFE DC current gain IC = 10 mA; VCE = 10 V 75 − fT transition frequency IC = 20 mA; VCE = 20 V; f = 100 MHz 2N2222 250 − MHz 2N2222A 300 − MHz toff turn-off time ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA − 250 ns 1997 May 29 2, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 2N2222 − 60 V 2N2222A − 75 V VCEO collector-emitter voltage open base 2N2222 − 30 V 2N2222A − 40 V VEBO emitter-base voltage open collector 2N2222 − 5 V 2N2222A − 6 V IC collector current (DC) − 800 mA ICM peak collector current − 800 mA IBM peak base current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C − 500 mW Tcase ≤ 25 °C − 1.2 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tamb operating ambient temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 350 K/W Rth j-c thermal resistance from junction to case 146 K/W 1997 May 29 3,

CHARACTERISTICS

Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current 2N2222 IE = 0; VCB = 50 V − 10 nA IE = 0; VCB = 50 V; Tamb = 150 °C − 10 µA ICBO collector cut-off current 2N2222A IE = 0; VCB = 60 V − 10 nA IE = 0; VCB = 60 V; Tamb = 150 °C − 10 µA IEBO emitter cut-off current IC = 0; VEB = 3 V − 10 nA hFE DC current gain IC = 0.1 mA; VCE = 10 V 35 − IC = 1 mA; VCE = 10 V 50 − IC = 10 mA; VCE = 10 V 75 − IC = 150 mA; VCE = 1 V; note 1 50 − IC = 150 mA; VCE = 10 V; note 1 100 300 hFE DC current gain IC = 10 mA; VCE = 10 V; Tamb = −55 °C 2N2222A 35 − hFE DC current gain IC = 500 mA; VCE = 10 V; note 1 2N2222 30 − 2N2222A 40 − VCEsat collector-emitter saturation voltage 2N2222 IC = 150 mA; IB = 15 mA; note 1 − 400 mV IC = 500 mA; IB = 50 mA; note 1 − 1.6 V VCEsat collector-emitter saturation voltage 2N2222A IC = 150 mA; IB = 15 mA; note 1 − 300 mV IC = 500 mA; IB = 50 mA; note 1 − 1 V VBEsat base-emitter saturation voltage 2N2222 IC = 150 mA; IB = 15 mA; note 1 − 1.3 V IC = 500 mA; IB = 50 mA; note 1 − 2.6 V VBEsat base-emitter saturation voltage 2N2222A IC = 150 mA; IB = 15 mA; note 1 0.6 1.2 V IC = 500 mA; IB = 50 mA; note 1 − 2 V Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 8 pF Ce emitter capacitance IC = ic = 0; VEB = 500 mV; f = 1 MHz 2N2222A − 25 pF fT transition frequency IC = 20 mA; VCE = 20 V; f = 100 MHz 2N2222 250 − MHz 2N2222A 300 − MHz F noise figure IC = 200 µA; VCE = 5 V; RS = 2 kΩ; 2N2222A f = 1 kHz; B = 200 Hz − 4 dB 1997 May 29 4, SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Switching times (between 10% and 90% levels); see Fig.2 ton turn-on time ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA − 35 ns td delay time − 10 ns tr rise time − 25 ns toff turn-off time − 250 ns ts storage time − 200 ns tf fall time − 60 ns Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. ndbook, full pagewidth VBB VCC RB RC (probe) Vo (probe) oscilloscope oscilloscope 450 Ω 450 Ω R2 Vi DUT R1 MLB826 Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω. VBB = −3.5 V; VCC = 29.5 V. Oscilloscope input impedance Zi = 50 Ω. Fig.2 Test circuit for switching times. 1997 May 29 5, PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads SOT18/13jαseating planeBwMAMBMbk

D

21aADAL0510 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNITAabDD1jkLwαmm 5.31 0.47 5.45 4.70 1.03 1.1 15.0 4.74 2.54 0.41 5.30 4.55 0.94 0.9 12.7 0.40 45° OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION SOT18/13 B11/C7 type 3 TO-18 97-04-18 1997 May 29 6,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 May 29 7,

Philips Semiconductors – a worldwide company

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Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 Middle East: see Italy For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Internet: http://www.semiconductors.philips.com Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 © Philips Electronics N.V. 1997 SCA54 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 117047/00/02/pp8 Date of release: 1997 May 29 Document order number: 9397 750 02161]
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