Download: DISCRETE SEMICONDUCTORS DATA SHEET 1PS302 High-speed double diode Product specification 1996 Apr 03 File under Discrete Semiconductors, SC01

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D114 1PS302 High-speed double diode Product specification 1996 Apr 03 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION PINNING • Very small plastic SMD package The 1PS302 consists of two PIN DESCRIPTION • High switching speed: max. 4 ns high-speed switching diodes connected in series, fabricated in 1 anode • Continuous reverse voltage: planar technology, and encapsulated 2 cathode max. 80 V in the very small rectangular plastic 3 common connection • Repetitive peak reverse voltage: SMD SC70 package. max. 85 V • Repetitive pea...
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, halfpage M3D114 1PS302

High-speed double diode

Product specification 1996 Apr 03 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION PINNING • Very small plastic SMD package The 1PS302 consists of two PIN DESCRIPTION • High switching speed: max. 4 ns high-speed switching diodes connected in series, fabricated in 1 anode • Continuous reverse voltage: planar technology, and encapsulated 2 cathode max. 80 V in the very small rectangular plastic 3 common connection • Repetitive peak reverse voltage: SMD SC70 package. max. 85 V • Repetitive peak forward current: max. 500 mA • Forward voltage: max. 1.2 V. 2 1 APPLICATIONS21• High-speed switching in e.g. surface mounted circuits. 3 Top view MAM083 Marking code: C3. Fig.1 Simplified outline (SC70) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM repetitive peak reverse voltage − 85 V VR continuous reverse voltage − 80 V IF continuous forward current single diode loaded; see Fig.2; − 200 mA note 1 double diode loaded; see Fig.2; − 170 mA note 1 IFRM repetitive peak forward current − 500 mA IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge t = 1 µs − 4At= 1 s − 0.5 A Ptot total power dissipation Tamb = 25 °C; note 1 − 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Note 1. Device mounted on an FR4 printed-circuit board. 1996 Apr 03 2, ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Per diode VF forward voltage see Fig.3 IF = 1 mA 610 − mV IF = 10 mA 740 − mV IF = 50 mA − 1.0 V IF = 100 mA − 1.2 V IR reverse current see Fig.4 VR = 25 V − 30 nA VR = 80 V − 0.5 µA VR = 25 V; Tj = 150 °C − 30 µA VR = 80 V; Tj = 150 °C − 100 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.5 − 1.5 pF trr reverse recovery time when switched from IF = 10 mA to − 4 ns IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.6 Vfr forward recovery voltage when switched from IF = 10 mA; − 1.75 V tr = 20 ns; see Fig.7 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 200 K/W Rth j-a thermal resistance from junction to ambient note 1 415 K/W Note 1. Device mounted on an FR4 printed-circuit board. 1996 Apr 03 3,

GRAPHICAL DATA

MBG443 MBG382 300 300 handbook, halfpage handbook, halfpage I IF F (mA) (mA) (1) (2) (3) 200 200 (1) (2) 100 100000100 Tamb ( oC) 20001VF (V) Device mounted on an FR4 printed-circuit board. (1) Tj = 150 °C; typical values. (1) Single diode loaded. (2) Tj = 25 °C; typical values. (2) Double diode loaded. (3) Tj = 25 °C; maximum values.

Fig.2 Maximum permissible continuous forward Fig.3 Forward current as a function of

current as a function of ambient temperature. forward voltage. MBG380 MBG446 handbook1, 0halfpage 0.8handbook, halfpage I CR d (µA) (pF) 10 0.6 (1) (2) (3) 1 0.4 10 0.2 10200100 Tj ( oC) 20004812 16VR (V) (1) VR = 80 V; maximum values. (2) VR = 80 V; typical values. (3) VR = 25 V; typical values. f = 1 MHz; Tj = 25 °C.

Fig.4 Reverse current as a function of Fig.5 Diode capacitance as a function of reverse

junction temperature. voltage; typical values. 1996 Apr 03 4, handbook, full pagewidthtrtptD.U.T. 10% RS = 50 Ω IF IF t rr SAMPLING t

OSCILLOSCOPE

V = VRIFxRSRi= 50 Ω 90% (1)

VR

MGA881 input signal output signal (1) IR = 1 mA.

Fig.6 Reverse recovery voltage test circuit and waveforms.

I1kΩ450ΩIV90% R S = 50 Ω OSCILLOSCOPE V D.U.T. frRi= 50 Ω 10% MGA882tttrtpinput output signal signal

Fig.7 Forward recovery voltage test circuit and waveforms.

1996 Apr 03 5, PACKAGE OUTLINE handbook, full pagewidth 2.2 1.35AB1.8 1.15

X

0.25 0.10 2.2 0.2 M 2.0 B 0.2 1.0 1.1 0.8 0.1 max 0.0 1 0.40 2 0.30 0.2MA0.3 0.1 0.65 detail X 1.3 MSA377 - 1 Dimensions in mm. Fig.8 SC70.

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Apr 03 6]
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