Download: DISCRETE SEMICONDUCTORS DATA SHEET 1N914; 1N916 High-speed diodes Product specification 1996 Apr 10 Supersedes data of April 1992 File under Discrete Semiconductors, SC01

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D176 1N914; 1N916

High-speed diodes

Product specification 1996 Apr 10 Supersedes data of April 1992 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION • Hermetically sealed leaded glass The 1N914; 1N916 are high-speed switching diodes fabricated in planar SOD27 (DO-35) package technology, and encapsulated in hermetically sealed leaded glass SOD27 • High switching speed: max. 4 ns (DO-35) packages. • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 100 V handbook, halfpagke a • Repetitive peak forward current: max. 225 mA MAM246 • Forward voltage: max. 1 V. The diodes are type branded.

APPLICATIONS

Fig.1 Simplified outline (SOD27; DO-35) and symbol. • High-speed switching. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 100 V VR continuous reverse voltage − 75 V IF continuous forward current see Fig.2; note 1 − 75 mA IFRM repetitive peak forward current − 225 mA IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs − 4At= 1 ms − 1At= 1 s − 0.5 A Ptot total power dissipation Tamb = 25 °C; note 1 − 250 mW Tstg storage temperature −65 +200 °C Tj junction temperature − 175 °C Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. 1996 Apr 10 2, ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage IF = 10 mA; see Fig.3 − 1000 mV IR reverse current see Fig.5 VR = 20 V − 25 nA VR = 75 V − 5 µA VR = 20 V; Tj = 150 °C − 50 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 1N914 − 4 pF 1N916 − 2 pF trr reverse recovery time when switched from IF = 10 mA to 1N914 IR = 10 mA; RL = 100 Ω; − 8 ns measured at IR = 1 mA; see Fig.7 reverse recovery time when switched from IF = 10 mA to − 4 ns IR = 60 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 Vfr forward recovery voltage when switched from IF = 50 mA; − 2.5 V tr = 20 ns; see Fig.8 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 500 K/W Note 1. Device mounted on a printed circuit-board without metallization pad. 1996 Apr 10 3, GRAPHICAL DATA MGD289 100 MBG464600 handbook, halfpage

IF

IF (mA) (mA) (1) (2) (3) 000100 200Tamb( o C) 0 1 VF (V) (1) Tj = 175 °C; typical values. (2) Tj = 25 °C; typical values. Device mounted on an FR4 printed-circuit board; lead length 10 mm. (3) Tj = 25 °C; maximum values. Fig.2 Maximum permissible continuous forward Fig.3 Forward current as a function of current as a function of ambient temperature. forward voltage. MBG704 handbook, full pagewidth

IFSM

(A) 10−1 1 10 102 103 t (µs) 10 p Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Apr 10 4, 3 MGD00610 MGD004 handbook, halfpage 1.2 I handbook, halfpageR C (µA) d 2 (pF)10 1.0 (1) (2) (3) 0.8 0.6 10−1 10−2 0.4 0 100 o 200Tj ( C) 0 10 VR (V) (1) VR = 75 V; maximum values. (2) VR = 75 V; typical values. (3) VR = 20 V; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Reverse current as a function of Fig.6 Diode capacitance as a function of reverse junction temperature. voltage; typical values. 1996 Apr 10 5, handbook, full pagewidthtrtptD.U.T. 10% RIItS = 50ΩFFrrSAMPLING t

OSCILLOSCOPE

V = VRIFxRSRi= 50 Ω 90% (1)

VR

MGA881 input signal output signal (1) IR = 1 mA.

Fig.7 Reverse recovery voltage test circuit and waveforms.

I1kΩ450ΩIV90% R S = 50 Ω OSCILLOSCOPE V D.U.T. frRi= 50 Ω 10% MGA882tttrtpinput output signal signal

Fig.8 Forward recovery voltage test circuit and waveforms.

1996 Apr 10 6, PACKAGE OUTLINE handbook, full pagewidth 0.56 max 1.85 4.25 max 25.4 min max 25.4 min MLA428 - 1 Dimensions in mm. Fig.9 SOD27 (DO-35).

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Apr 10 7]

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