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DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 1N5817; 1N5818; 1N5819 Schottky barrier diodes Product specification 1996 May 03 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Low switching losses The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar • Fast recovery time technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating ImplotecTM(1) technology. • Guard ring protected • Hermetically sealed leaded glass (1) Implotec is a trademark of Philips. package. APPLICATIONS handbook, 4 c...
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, halfpage M3D119 1N5817; 1N5818; 1N5819

Schottky barrier diodes

Product specification 1996 May 03 Supersedes data of April 1992 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION • Low switching losses The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar • Fast recovery time technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating ImplotecTM(1) technology. • Guard ring protected • Hermetically sealed leaded glass (1) Implotec is a trademark of Philips. package.

APPLICATIONS

handbook, 4 columnska• Low power, switched-mode power supplies MAM218 • Rectifying Fig.1 Simplified outline (SOD81) and symbol. • Polarity protection. 1996 May 03 2, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage 1N5817 − 20 V 1N5818 − 30 V 1N5819 − 40 V VRSM non-repetitive peak reverse voltage 1N5817 − 24 V 1N5818 − 36 V 1N5819 − 48 V VRRM repetitive peak reverse voltage 1N5817 − 20 V 1N5818 − 30 V 1N5819 − 40 V VRWM crest working reverse voltage 1N5817 − 20 V 1N5818 − 30 V 1N5819 − 40 V IF(AV) average forward current Tamb = 55 °C; Rth j-a = 100 K/W; − 1 A note 1; VR(equiv) = 0.2 V; note 2 IFSM non-repetitive peak forward current t = 8.3 ms half sine wave; − 25 A JEDEC method; Tj = Tj max prior to surge: VR = 0 Tstg storage temperature −65 +175 °C Tj junction temperature − 125 °C Notes 1. Refer to SOD81 standard mounting conditions. 2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. 1996 May 03 3, ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage see Fig.2 1N5817 IF = 0.1 A − − 320 mV IF = 1 A − − 450 mV IF = 3 A − − 750 mV VF forward voltage see Fig.2 1N5818 IF = 0.1 A − − 330 mV IF = 1 A − − 550 mV IF = 3 A − − 875 mV VF forward voltage see Fig.2 1N5819 IF = 0.1 A − − 340 mV IF = 1 A − − 600 mV IF = 3 A − − 900 mV IR reverse current VR = VRRMmax; note 1 − − 1 mA VR = VRRMmax; Tj = 100 °C − − 10 mA Cd diode capacitance VR = 4 V; f = 1 MHz 1N5817 − 80 − pF 1N5818 − 50 − pF 1N5819 − 50 − pF Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 100 K/W Note 1. Refer to SOD81 standard mounting conditions. 1996 May 03 4, GRAPHICAL DATA MBE634 handbook, halfpage

IF

(A) Tj = 125 oC 25 oC 0 0.5 VF (V) 1 Fig.2 Typical forward voltage. MBE642 a = 3 2.5 2 1.57 1.42 1 PF(AV) (W) 0.5 0 0.5 1 1.5 IF(AV) (A) Fig.3 1N817. Maximum values steady state forward power dissipation as a function of the average forward current; a = IF(RMS)/IF(AV). 1996 May 03 5, MBE641 a = 3 2.5 2 1.57 1.42 1 PF(AV) (W) 0.5 0 0.5 1 1.5 IF(AV) (A) Fig.4 1N5818. Maximum values steady state forward power dissipation as a function of the average forward current; a = IF(RMS)/IF(AV). MBE643 a = 3 2.5 2 1.57 1.42 1 PF(AV) (W) 0.5 0 0.5 1 1.5 IF(AV) (A) Fig.5 1N5819. Maximum values steady state forward power dissipation as a function of the average forward current; a = IF(RMS)/IF(AV). 1996 May 03 6, MBG434 MBG435 200 0.20 handbook, halfpage handbook, halfpage Tj PR (oC) (W) VRWM VRWM V VR δ = 0.5 δ = 0.2 150 RWM 0.15 δ = 0.2 100 0.10 V VR RWM δ = 0.5 50 0.0500010 V (V) 20 0 10R VR (V) Fig.6 1N5817. Maximum permissible junction Fig.7 1N5817. Reverse power dissipation as a temperature as a function of reverse voltage; function of reverse voltage (max. values); Rth j-a = 100 K/W. Rth j-a = 100 K/W. MBG432 MBG437 200 0.20 handbook, halfpage handbook, halfpage T Pj R (oC) (W) VRWM VRWM VR δ = 0.5 δ = 0.2 150 VRWM 0.15 δ = 0.2 100 0.10 VR VRWM δ = 0.5 50 0.0500010 20 VR (V) 30 0 10 20 VR (V) Fig.8 1N5818. Maximum permissible junction Fig.9 1N5818. Reverse power dissipation as a temperature as a function of reverse voltage; function of reverse voltage (max. values); Rth j-a = 100 K/W. Rth j-a = 100 K/W. 1996 May 03 7, MBG433 MBG436 200 0.20 handbook, halfpage handbook, halfpage T PjRV(oC) (W) RWM VRWM VR δ = 0.5 δ = 0.2 150 VRWM 0.15 δ = 0.2 100 0.10

VR VRWM

δ = 0.5 50 0.0500010 20 30 VR (V) 40 0 10 20 30 VR (V) Fig.10 1N5819. Maximum permissible junction Fig.11 1N5819. Reverse power dissipation as a temperature as a function of reverse voltage; function of reverse voltage (max. values); Rth j-a = 100 K/W. Rth j-a = 100 K/W. 1996 May 03 8, PACKAGE OUTLINE 5 max handbook, full pagewidth 0.81 max 2.15 MBC051 max 28 min 3.8 max 28 min Dimensions in mm. Fig.12 SOD81.

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 03 9]
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