Download: DISCRETE SEMICONDUCTORS DATA SHEET 1N5225B to 1N5267B Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N5225B to 1N5267B Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Total power dissipation: Low-power voltage regulator diodes in hermetically sealed leaded glass max. 500 mW SOD27 (DO-35) packages. • Tolerance series: ±5% The series consists of 43 types with nominal working voltages from 3.0 to 75 V. • Working voltage range: nom. 3.0 to 75 V • Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpagekaAPPLICATIONS MAM239 • Low-po...
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DISCRETE SEMICONDUCTORS

DATA SHEET

M3D176 1N5225B to 1N5267B

Voltage regulator diodes

Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION • Total power dissipation: Low-power voltage regulator diodes in hermetically sealed leaded glass max. 500 mW SOD27 (DO-35) packages. • Tolerance series: ±5% The series consists of 43 types with nominal working voltages from 3.0 to 75 V. • Working voltage range: nom. 3.0 to 75 V • Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpagekaAPPLICATIONS MAM239 • Low-power voltage stabilizers or voltage references. The diodes are type branded. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IF continuous forward current − 250 mA IZSM non-repetitive peak reverse current tp = 100 µs; square wave; see Table Tj = 25 °C prior to surge “Per type” Ptot total power dissipation Tamb = 50 °C; lead length max.; − 400 mW note 1 Lead length 8 mm; note 2 − 500 mW PZSM non-repetitive peak reverse power tp = 100 µs; square wave; − 40 W dissipation Tj = 25 °C prior to surge; see Fig.3 tp = 8.3 ms; square wave; − 10 W Tj ≤ 55 °C prior to surge Tstg storage temperature −65 +200 °C Tj junction temperature −65 +200 °C Notes 1. Device mounted on a printed circuit-board without metallization pad. 2. Tie-point temperature ≤ 75 °C. ELECTRICAL CHARACTERISTICS Table 1 Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage IF = 200 mA; see Fig.4 1.1 V 1996 Apr 26 2, 1996 Apr 26 3 Per type Tj = 25 °C; unless otherwise specified. WORKING DIFFERENTIAL TEMP. COEFF. TEST DIODE CAP. REVERSE CURRENT NON-REPETITIVE PEAK VOLTAGE RESISTANCE SZ (%/K) CURRENT Cd (pF) at REVERSE REVERSE CURRENT V (V)(1) r (Ω) at I (2) I (mA) at f = 1 MHz; VOLTAGE I (A) TYPE No. Z dif Z Ztest ZSM at IZtest at IZtest at VR = 0Vµtp = 100 µs; TI ( A) amb = 25 °CR VR NOM. MAX. MAX. MAX. MAX. (V) MAX. 1N5225B 3.0 1600 −0.075 20 450 50 1.0 6.0 1N5226B 3.3 1600 −0.070 20 450 25 1.0 6.0 1N5227B 3.6 1700 −0.065 20 450 15 1.0 6.0 1N5228B 3.9 1900 −0.060 20 450 10 1.0 6.0 1N5229B 4.3 2000 ±0.055 20 450 5 1.0 6.0 1N5230B 4.7 1900 ±0.030 20 450 5 1.5 6.0 1N5231B 5.1 1600 ±0.030 20 300 5 2.0 6.0 1N5232B 5.6 1600 +0.038 20 300 5 3.0 6.0 1N5233B 6.0 1600 +0.038 20 300 5 3.5 6.0 1N5234B 6.2 1000 +0.045 20 200 5 4.0 6.0 1N5235B 6.8 750 +0.050 20 200 3 5.0 6.0 1N5236B 7.5 500 +0.058 20 150 3 6.0 4.0 1N5237B 8.2 500 +0.062 20 150 3 6.5 4.0 1N5238B 8.7 600 +0.065 20 150 3 6.5 3.5 1N5239B 9.1 600 +0.068 20 150 3 7.0 3.0 1N5240B 10 600 +0.075 20 90 3 8.0 3.0 1N5241B 11 600 +0.076 20 85 2 8.4 2.5 1N5242B 12 600 +0.077 20 85 1 9.1 2.5 1N5243B 13 600 +0.079 9.5 80 0.5 9.9 2.5 1N5244B 14 600 +0.082 9.0 80 0.1 10.0 2.0 1N5245B 15 600 +0.082 8.5 75 0.1 11.0 2.0 1N5246B 16 600 +0.083 7.8 75 0.1 12.0 1.5 1N5247B 17 600 +0.084 7.4 75 0.1 13.0 1.5 1N5248B 18 600 +0.085 7.0 70 0.1 14.0 1.5 1N5249B 19 600 +0.086 6.6 70 0.1 14.0 1.5 1N5250B 20 600 +0.086 6.2 60 0.1 15.0 1.5, 1996 Apr 26 4 WORKING DIFFERENTIAL TEMP. COEFF. TEST DIODE CAP. REVERSE CURRENT NON-REPETITIVE PEAK VOLTAGE RESISTANCE SZ (%/K) CURRENT Cd (pF) at REVERSE REVERSE CURRENT V (V)(1) r (Ω) at I (2) I (mA) at f = 1 MHz; VOLTAGE I (A) TYPE No. Z dif Z Ztest ZSM at IZtest at IZtest at VR = 0Vt= 100 µs; T = 25 °CIR (µA) p ambVR NOM. MAX. MAX. MAX. MAX. (V) MAX. 1N5251B 22 600 +0.087 5.6 60 0.1 17.0 1.25 1N5252B 24 600 +0.088 5.2 55 0.1 18.0 1.25 1N5253B 25 600 +0.089 5.0 55 0.1 19.0 1.25 1N5254B 27 600 +0.090 4.6 50 0.1 21.0 1.0 1N5255B 28 600 +0.091 4.5 50 0.1 21.0 1.0 1N5256B 30 600 +0.091 4.2 50 0.1 23.0 1.0 1N5257B 33 700 +0.092 3.8 45 0.1 25.0 0.9 1N5258B 36 700 +0.093 3.4 45 0.1 27.0 0.8 1N5259B 39 800 +0.094 3.2 45 0.1 30.0 0.7 1N5260B 43 900 +0.095 3.0 40 0.1 33.0 0.6 1N5261B 47 1000 +0.095 2.7 40 0.1 36.0 0.5 1N5262B 51 1100 +0.096 2.5 40 0.1 39.0 0.4 1N5263B 56 1300 +0.096 2.2 40 0.1 43.0 0.3 1N5264B 60 1400 +0.097 2.1 40 0.1 46.0 0.3 1N5265B 62 1400 +0.097 2.0 35 0.1 47.0 0.3 1N5266B 68 1600 +0.097 1.8 35 0.1 52.0 0.25 1N5267B 75 1700 +0.098 1.7 35 0.1 56.0 0.2 Notes 1. VZ is measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25 °C. 2. For types 1N5225B to 1N5242B the IZ current is 7.5 mA; for 1N5243B and higher IZ = IZtest. SZ values valid between 25 °C and 125 °C., THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 300 K/W Rth j-a thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1 380 K/W Note 1. Device mounted on a printed circuit-board without metallization pad. 1996 Apr 26 5, GRAPHICAL DATA MBG930 handbook, full pagewidth δ = 1 Rth j-a (K/W) 0.75 0.50 0.33 102 0.20 0.10 0.05 0.02 0.01 10 ≤0.001 tptTδp=

T

10−1 1 10 102 103 104 tp (ms) 10 Fig.2 Thermal resistance from junction to ambient as a function of pulse duration. 3 MBG801 MBG80310 handbook, halfpage 250handbook, halfpage

PZSM

(W) IF (mA) (1) (2) 1 0 10−1 1 duration (ms) 10 0.5 0.75 VF (V) 1.0 (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Tj = 25 °C. Fig.3 Maximum permissible non-repetitive peak reverse power dissipation Fig.4 Forward current as a function of forward versus duration. voltage; typical values. 1996 Apr 26 6, PACKAGE OUTLINE handbook, full pagewidth 0.56 max 1.85 4.25 25.4 min 25.4 min MLA428 - 1max max Dimensions in mm. Fig.5 SOD27 (DO-35).

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Apr 26 7]
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