Download: DISCRETE SEMICONDUCTORS DATA SHEET 1N5059 to 1N5062 Controlled avalanche rectifiers Product specification 1996 Jun 20 Supersedes data of April 1992 File under Discrete Semiconductors, SC01

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 1N5059 to 1N5062 Controlled avalanche rectifiers Product specification 1996 Jun 20 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • Glass passivated Rugged glass package, using a high expansion of all used parts are • High maximum operating temperature alloyed construction. matched. temperature • Low leakage currentka• Excellent stability 2/3 page (Datasheet) • Guaranteed avalanche energy MAM047 absorption capability•...
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, 2 columns M3D116 1N5059 to 1N5062

Controlled avalanche rectifiers

Product specification 1996 Jun 20 Supersedes data of April 1992 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • Glass passivated Rugged glass package, using a high expansion of all used parts are • High maximum operating temperature alloyed construction. matched. temperature • Low leakage currentka• Excellent stability 2/3 page (Datasheet) • Guaranteed avalanche energy MAM047 absorption capability• Available in ammo-pack. Fig.1 Simplified outline (SOD57) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage 1N5059 − 200 V 1N5060 − 400 V 1N5061 − 600 V 1N5062 − 800 V VRWM crest working reverse voltage 1N5059 − 200 V 1N5060 − 400 V 1N5061 − 600 V 1N5062 − 800 V VR continuous reverse voltage 1N5059 − 200 V 1N5060 − 400 V 1N5061 − 600 V 1N5062 − 800 V IF(AV) average forward current Ttp = 45 °C; − 2.0 A lead length = 10 mm; averaged over any 20 ms period; see Figs 2 and 4 Tamb = 80 °C; PCB mounting − 0.8 A (see Fig.9); averaged over any 20 ms period; see Figs 3 and 4 IFSM non-repetitive peak forward current t = 10 ms half sinewave − 50 A ERSM non-repetitive peak reverse avalanche L = 120 mH; Tj = Tj max prior to − 20 mJ energy surge; inductive load switched off Tstg storage temperature −65 +175 °C Tj junction temperature see Fig.5 −65 +175 °C 1996 Jun 20 2, ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 1 A; Tj = Tj max; see Fig.6 − − 0.8 V IF = 1 A; see Fig.6 − − 1.0 V V(BR)R reverse avalanche IR = 0.1 mA breakdown voltage 1N5059 225 − − V 1N5060 450 − − V 1N5061 650 − − V 1N5062 900 − − V IR reverse current VR = VRRMmax; see Fig.7 − − 1 µA VR = VRRMmax; Tj = 165 °C; see Fig.7 − − 150 µA trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; − 3 − µs measured at IR = 0.25 A; see Fig.10 Cd diode capacitance VR = 0 V; f = 1 MHz; see Fig.8 − 50 − pF THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 46 K/W Rth j-a thermal resistance from junction to ambient note 1 100 K/W Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9. For more information please refer to the “General Part of Handbook SC01”. 1996 Jun 20 3, GRAPHICAL DATA MBG044 MBG054 3 1.6 handbook, halfpage handbook, halfpage

I

I F(AV) F(AV) (A) 1.2 0.8 0.400040 80 120 160 200 0 40 80 120 160 200 Ttp (°C) Tamb (°C) a = 1.57; VR = VRRMmax; δ = 0.5. a = 1.57; VR = VRRMmax; δ = 0.5. Lead length 10 mm. Device mounted as shown in Fig.9. Fig.2 Maximum permissible average forward Fig.3 Maximum permissible average forward current as a function of tie-point temperature current as a function of ambient temperature (including losses due to reverse leakage). (including losses due to reverse leakage). MGC745 MBH388 4 200 handbook, halfpage handbook, halfpage

P

(W)

T

3j21.57 1.42 (°C) 2.5 2 100 a = 3 59 60 61 620001230400 800 I VR (V) F(AV) (A) a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Solid line = VR. Fig.4 Maximum steady state power dissipation Dotted line = VRRM; δ = 0.5. (forward plus leakage current losses, excluding switching losses) as a function Fig.5 Maximum permissible junction temperature of average forward current. as a function of reverse voltage. 1996 Jun 20 4, MGC735 MGC734 15 3 handbook, halfpage handboo1k,0 halfpage I IF R (A) (µA) max 0 10 −1012040 80 120 160 200 VF (V) T (oj C) Solid line: Tj = 25 °C. Dotted line: Tj = 175 °C. VR = VRRMmax. Fig.6 Forward current as a function of forward Fig.7 Reverse current as a function of junction voltage; maximum values. temperature; maximum values. MBG031 handboo1k,0 halfpage handbook, halfpage Cd (pF) 10 50 1 10 2VR (V) MGA200 f = 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.8 Diode capacitance as a function of reverse voltage; typical values. Fig.9 Device mounted on a printed-circuit board. 1996 Jun 20 5, handbook, full pagewidth IDUT F + 0.5 10 Ω 25 V trr1Ω50Ω0t0.25 0.5

IR

1 MAM057 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.10 Test circuit and reverse recovery time waveform and definition. 1996 Jun 20 6, PACKAGE OUTLINE handbook, full pagewidthka0.81 max 3.81 4.57 max 28 min 28 min MBC880 max Dimensions in mm. Fig.11 SOD57.

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jun 20 7]
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