Download: DISCRETE SEMICONDUCTORS DATA SHEET 1N4728A to 1N4749A Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D130 1N4728A to 1N4749A Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Total power dissipation: Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages. max. 1000 mW The series consists of 22 types with nominal working voltages from 3.3 to 24 V. • Tolerance series: ±5% • Working voltage range: nom. 3.3 to 24 V. handbook, halfpagek a APPLICATIONS MAM241 • Low voltage stabilizers. The diodes are type branded. Fig.1 Si...
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, halfpage M3D130 1N4728A to 1N4749A

Voltage regulator diodes

Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION • Total power dissipation: Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages. max. 1000 mW The series consists of 22 types with nominal working voltages from 3.3 to 24 V. • Tolerance series: ±5% • Working voltage range: nom. 3.3 to 24 V. handbook, halfpagek a APPLICATIONS MAM241 • Low voltage stabilizers. The diodes are type branded. Fig.1 Simplified outline (SOD66; DO-41) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IF continuous forward current − 500 mA IZM working current see Table “Per type” IZSM non-repetitive peak reverse current see Table “Per type” Ptot total power dissipation Tamb = 50 °C − 1000 mW Tstg storage temperature −65 +200 °C Tj junction temperature −65 +200 °C ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage IF = 200 mA; see Fig.3 − 1.2 V 1996 Apr 26 2, 1996 Apr 26 3 Per type Tj = 25 °C; unless otherwise specified. WORKING TEST CURRENT DIFFERENTIAL REVERSE CURRENT WORKING NON-REPETITIVE VOLTAGE IZtest (mA) RESISTANCE at REVERSE VOLTAGE CURRENT PEAK REVERSE V (V)(1) TYPE No. Z rdif (Ω I (mA) CURRENT ) rdif (Ω) ZMat I (2)Ztest at I atIIIR (µA) I (mA)ZtestZZZSMV (V) (mA) R NOM. MAX. MAX. MAX. MAX. MAX. 1N4728A 3.3 76 10 400 1 100 1 276 1380 1N4729A 3.6 69 10 400 1 100 1 252 1260 1N4730A 3.9 64 9 400 1 50 1 234 1190 1N4731A 4.3 58 9 400 1 10 1 217 1070 1N4732A 4.7 53 8 500 1 10 1 193 970 1N4733A 5.1 49 7 550 1 10 1 178 890 1N4734A 5.6 45 5 600 1 10 2 162 810 1N4735A 6.2 41 2 700 1 10 3 146 730 1N4736A 6.8 37 3.5 700 1 10 4 133 660 1N4737A 7.5 34 4 700 0.5 10 5 121 605 1N4738A 8.2 31 4.5 700 0.5 10 6 110 550 1N4739A 9.1 28 5 700 0.5 10 7 100 500 1N4740A 10 25 7 700 0.25 10 7.6 91 454 1N4741A 11 23 8 700 0.25 5 8.4 83 414 1N4742A 12 21 9 700 0.25 5 9.1 76 380 1N4743A 13 19 10 700 0.25 5 9.9 69 344 1N4744A 15 17 14 700 0.25 5 11.4 61 304 1N4745A 16 15.5 16 700 0.25 5 12.2 57 285 1N4746A 18 14 20 750 0.25 5 13.7 50 250 1N4747A 20 12.5 22 750 0.25 5 15.2 45 225 1N4748A 22 11.5 23 750 0.25 5 16.7 41 205 1N4749A 24 10.5 25 750 0.25 5 18.2 38 190 Notes 1. VZ is measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25 °C. 2. Half square wave or equivalent sinewave pulse 1⁄120 second duration superimposed on IZtest., THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 4 mm; see Fig.2 110 K/W 1996 Apr 26 4, GRAPHICAL DATA MBG928 handbook, full pagewidth Rth j-tp (K/W) δ = 1 0.75 0.50 0.33 0.20 0.10 0.05 0.02 tp t 0.01Tδp=

T

10−1 1 10 102 103 104 t (ms) 105p Fig.2 Thermal resistance from junction to tie-point; lead length 4 mm. MBG925 handbook, halfpage

IF

(mA) (1) (2) 0 0.5 VF (V) 1.0 (1) Tj = 200 °C; typical values. (2) Tj = 25 °C; typical values. Fig.3 Forward current as a function of forward voltage. 1996 Apr 26 5, PACKAGE OUTLINE k handbook, full pagewidth a 0.81 max 2.6 4.8 28 min 28 min MBC894 max max Dimensions in mm. Fig.4 SOD66 (DO-41).

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Apr 26 6]
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