Download: TOSHIBA Discrete Semiconductors 2SD2012 Transistor Unit in mm Silicon NPN Triple Diffused Type Audio Frequency Power Amplifier Features • High DC Current Gain : 100 (Min.)

TOSHIBA Discrete Semiconductors 2SD2012 Transistor Unit in mm Silicon NPN Triple Diffused Type Audio Frequency Power Amplifier Features • High DC Current Gain : 100 (Min.) • Low Saturation Voltage - VCE (sat) = 1.0V (Max.) (IC = 2A, IB = 0.2A) • High Power Dissipation - PC = 25W (Tc = 25°C) • Collector Metal (Fin) is Covered with Mold Resin • Complementary to 2SB1375 Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO7VCollector Current IC3ABase Current IB 0.5 A Collector Power Ta ...
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TOSHIBA Discrete Semiconductors 2SD2012 Transistor Unit in mm Silicon NPN Triple Diffused Type Audio Frequency Power Amplifier

Features • High DC Current Gain : 100 (Min.) • Low Saturation Voltage - VCE (sat) = 1.0V (Max.) (IC = 2A, IB = 0.2A) • High Power Dissipation - PC = 25W (Tc = 25°C) • Collector Metal (Fin) is Covered with Mold Resin • Complementary to 2SB1375 Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO7VCollector Current IC3ABase Current IB 0.5 A Collector Power Ta = 25°C 2.0 DissipationPWTc = 25°C C 25 Junction Temperature Tj 150 °C Storage Temperature Range Tstg -55 ~ 150 °C Electrical Characteristics (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB = 60V, IE = 0 – – 100 µA Emitter Cut-off Current IEBO VEB = 7V, IC = 0 – – 100 µA Collector-Emitter Breakdown Voltage V(BR) CEO) IC = 50mA, IB = 0 60 – – V DC Current Gain hFE(Νοte) VCE = 5V, IC = -0.5mA 100 - 320 Collector-Emitter VCE(sat) IC = 2A, IB = 0.2A – 0.4 10 V Saturation Voltage Base-Emitter Voltage VBE VCE = 5V, IC = 0.5A – 0.75 1.0 V Transition Frequency fT VCE = 5V, IC = 0.5A – 3.0 – MHz Collector Output Capacitance Cob VCB = 10V, IE = 0, – 35 – pF f = 1MHz TOSHIBA CORPORATION 1/2, 2SD2012 The information contained here is subject to change without notice. The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equip- ments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA. 2/2 TOSHIBA CORPORATION]
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