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DATA SHEET SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise PACKAGE DIMENSIONS amplifier at VHF, UHF and CATV band. in millimeters (inches) 5.2 MAX. It has lange dynamic range and good current characteristic. (0.204 MAX.) FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz • High Power Gain MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 ...
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DATA SHEET SILICON TRANSISTOR

2SC3355

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION

The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise PACKAGE DIMENSIONS amplifier at VHF, UHF and CATV band. in millimeters (inches) 5.2 MAX. It has lange dynamic range and good current characteristic. (0.204 MAX.)

FEATURES

• Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz • High Power Gain MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz 0.5 (0.02) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO 20 V 1.27 2.54 (0.05) (0.1) Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 100 mA123Total Power Dissipation PT 600 mW Junction Temperature Tj 150 C 1. Base EIAJ : SC-43B Storage Temperature Tstg 65 to +150 C 2. Emitter JEDEC: TO-92 3. Collector IEC : PA33 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 1.0 A VCB = 10 V, IE = 0 Emitter Cutoff Current IEBO 1.0 A VEB = 1.0 V, IC = 0 DC Current Gain hFE 50 120 300 VCE = 10 V, IC = 20 mA Gain Bandwidth Product fT 6.5 GHz VCE = 10 V, IC = 20 mA Output Capacitance Cob 0.65 1.0 pF VCB = 10 V, IE = 0, f = 1.0 MHz Insertion Power Gain S 221e 9.5 dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz Noise Figure NF 1.1 dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz Noise Figure NF 1.8 3.0 dB VCE = 10 V, IC = 40 mA, f = 1.0 GHz hFE Classification Class K Marking K hFE 50 to 300 Document No. P10355EJ3V1DS00 (3rd edition) Date Published March 1997 N Printed in Japan © 1985 1.77 MAX. (0.069 MAX.) 4.2 MAX. 14 MIN. 5.5 MAX. (0.165 MAX.) (0.551 MIN.) (0.216 MAX.),

TYPICAL CHARACTERISTICS (TA = 25 C)

TOTAL POWER DISSIPATION vs. FEED-BACK CAPACITANCE vs. AMBIENT TEMPERATURE COLLECTOR TO BASE VOLTAGE heat sink f = 1.0 MHz With heat sink Free air 0.5 0 50 100 150 TA-Ambient Temperature-°C 0.3 0 0.512510 20 30 VCB-Collector to Base Voltage-V DC CURRENT GAIN vs. INSERTION GAIN vs. COLLECTOR CURRENT COLLECTOR CURRENT 200 15 VCE = 10 V VCE = 10Vf= 1.0 GHz 10 0 0.51510 50 0.51510 50 70 IC-Collector Current-mA IC-Collector Current-mA GAIN BANDWIDTH PROUDCT vs. INSERTION GAIN, MAXIMUM GAIN COLLECTOR CURRENT vs. FREQUENCY Gmax 5.0 3.0 |S 221e| 2.0 1.0 0.5 0.3 0.2 VCE = 10 V VCE = 10 V IC = 20 mA 0.1000.5 10 5.0 10 30 0.1 0.2 0.4 0.6 0.8 10 2 IC-Collector Current-mA f-Frequency-GHz fT-Gain Bandwidth Product-GHz hFE-DC Current Gain PT-Total Power Dissipation-mW 3.8 7.8 10 Gmax-Maximum Gain-dB |S 221e| -Insertion Gain-dB |S |221e -Insertion Gain-dB Cre-Feed-back Capacitance-pF, NOISE FIGURE vs. INTERMODULATIOn DISTORTION vs. COLLECTOR CURRENT COLLECTOR CURRENT VCE = 10Vf= 1.0 GHz −80 IM3 4 −70 −60 IM2 −50 0.51510 50 70 VCE = 10 V at V0 + 100 dB µ V/50 Ω IC-Collector Current-mA −40 Rg = Re = 50 Ω IM2 f = 90 + 100 MHz IM3 f = 2 × 200 − 190 MHz −30 20 30 40 50 60 70 IC-Collector Current-mA

S-PARAMETER VCE = 10 V, IC = 20 mA, ZO = 50

f (MHz) S11 S11 S21 S21 S12 S12 S22 S22 200 0.173 80.3 13.652 103.4 0.041 73.8 0.453 21.8 400 0.054 77.0 7.217 85.1 0.066 71.2 0.427 26.0 600 0.013 57.9 4.936 74.0 0.113 69.3 0.428 30.8 800 0.028 81.8 3.761 62.3 0.144 67.0 0.414 37.2 1000 0.062 82.2 3.094 58.3 0.183 64.7 0.392 43.2 1200 0.091 80.7 2.728 52.9 0.215 61.7 0.377 51.4 1400 0.121 80.2 2.321 44.9 0.240 58.7 0.359 58.3 1600 0.148 80.1 2.183 36.4 0.288 50.7 0.354 67.2 1800 0.171 80.0 1.892 30.2 0.305 46.8 0.345 80.0 2000 0.207 79.9 1.814 21.4 0.344 39.1 0.344 90.4

VCE = 10 V, IC = 40 mA, ZO = 50

f (MHz) S11 S11 S21 S21 S12 S12 S22 S22 200 0.011 60.1 13.76 105.4 0.040 73.3 0.421 17.5 400 0.028 42.9 7.338 82.9 0.069 66.7 0.416 22.8 600 0.027 25.1 4.996 72.7 0.114 69.4 0.414 28.7 800 0.043 65.7 3.801 61.9 0.144 67.8 0.406 35.7 1000 0.074 75.1 3.134 57.6 0.183 63.4 0.386 41.8 1200 0.098 75.6 2.759 52.4 0.221 62.1 0.373 49.8 1400 0.120 74.1 2.351 44.4 0.247 55.7 0.356 56.3 1600 0.146 75.8 2.203 36.0 0.291 49.6 0.347 66.6 1800 0.171 77.2 1.910 29.9 0.299 46.0 0.342 78.8 2000 0.205 78.0 1.825 21.3 0.344 39.4 0.335 89.6 NF-Noise Figure-dB IM2, IM3 (dB),

S-PARAMETER S11e, S22e-FREQUENCY CONDITION VCE = 10 V

.11 0.1 2 0.13 0 0.14 0.10 .39 0.38 0.37000.3 .165.090 0.40 90 8 . 0. 0 0 3511106.4 0.3 0 0.080110 70 4 .1200.4 . 7 20 06 33 0 .010.1030.3 0.4 0.22050 NTE 0.4

ON

0.6 3.0 4.0 1.0 .0

S 611e

2.0 GHz

IC = 20 mA IC = 40 mA 20

REACTANCE COMPONENT (

R

– ––– Z ) 0.2 IC = 40 mAO 0.2 GHz 0.1 0.4 0.2 GHz 0.6 0.2 IC = 20 mA 2.0 GHz S22e 0.3 0.4 TA

S21e-FREQUENCY CONDITION VCE = 10 V S12e-FREQUENCY CONDITION VCE = 10 V IC = 40 mA IC = 40 mA

90° 90° 120° 60° 120° 60° 0.2 GHz 150° 30° 150° 30°

S12e S21e 2.0 GHz

2.0 GHz 0.2 GHz 180° 0° 180° 0° 4 8 12 16 20 0.1 0.2 0.3 0.4 0.5 −150° −30° −150° −30° −120° −60° −120° −60° −90° −90°

WAVE

0 LE0 N0.49 .0

G

1 THS T 0.48 0.0 0

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4 0. S O

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H LE E 0. 0 TN OR 0. GT

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S .46050W.0 5 150 150 0 0.0 − .4504. ENT 0.1 P OS1060.060NIT . −1 4 PO IVE 4 4MR04ECOEACT

AN C

TCX( + A ––JX NCE EA −J(–– – ) – 0.2ZO– CER

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– O ) M

IV

Z P 0.5 0.5 0.3 0.6 0.6 0.7 0.5 0.7 0.6 0.8 0.8 0.7 0.9 0.8 0.9 0.9 1.0 1.0 1.0 1.2 1.2 1.4 1.2 1.0 1.6 1.0 1.8 1.4 12.0 .4 1.6 1.6 .8 3.0 11 .8 .0 4.0 22 .0 5.0 36 0.37 0.380. 0.39 0.35 .14 0.13 0.1200.1 .1 404000.3 0.1 −80 −90 −1 .10 .0 4013.16 0 − 11 .0.3 0 −7090020.1 7 .0 0 −12800.3 2 −6 0 .0 43 .18 0 ..2 00 0 − −5 30

N

0.4 EG 3.0 0.6 4.0 1.0 5.0 0.2 0.4 0.1 0.6 0.2 0.3 0.4 0.24 0.25 0.26 0.23 0.27 .22 7 0.2 6 0.25 0.24 0.2 00 .2 3 .0 280 0 0.2 1 0.28 10 −10 .22 0. 9 20 − 209.2 0 .2 200100. .3 30 30 −30 0 0. .20 9 0.3 0.1 1 − 0. 1 0.34040 19, [MEMO], [MEMO], [MEMO], No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5]
15

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