Download: PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Applications Features Package Dimensions · Adoption of FBET process. unit:mm

Ordering number:EN778E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Applications Features Package Dimensions · Adoption of FBET process. unit:mm · High breakdown voltage. 2003A · Excellent linearity of hFE and small Cob. · Fast switching speed. [2SA1207/2SC2909] JEDEC:TO-92 B:Base ( ) : 2SA1207 EIAJ:SC-43 C:Collector Specifications SANYO:NP E:Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)180 V Collector-to-Emitter Voltage VCEO (–)160 V Emitter-to-Base Voltage VEBO ...
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Ordering number:EN778E

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1207/2SC2909

High-Voltage Switching AF 60W Predriver Applications Features Package Dimensions

· Adoption of FBET process. unit:mm · High breakdown voltage. 2003A · Excellent linearity of hFE and small Cob. · Fast switching speed. [2SA1207/2SC2909] JEDEC:TO-92 B:Base ( ) : 2SA1207 EIAJ:SC-43 C:Collector

Specifications SANYO:NP E:Emitter Absolute Maximum Ratings at Ta = 25˚C

Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)180 V Collector-to-Emitter Voltage VCEO (–)160 V Emitter-to-Base Voltage VEBO (–)5 V Collector Current IC (–)70 mA Collector Current (Pulse) ICP (–)140 mA Collector Dissipation PC 600 mW Junction Temperature Tj 150 ˚C Storage Temperature Tstg –55 to +150 ˚C

Electrical Characteristics at Ta = 25˚C

Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=(–)80V, IE=0 (–)0.1 µA Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 (–)0.1 µA DC Current Gain hFE VCE=(–)5V, IC=(–)10mA 100* 400* Gain-Bandwidth Product fT VCE=(–)10V, IC=(–)10mA 150 MHz Output Capacitance Cob VCB=(–)10V, f=1MHz (2.5)2.0 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)30mA, IB=(–)3mA 0.08 0.3 V (–0.14) (–0.4) Turn-ON Time ton See specified Test Circuit 0.1 µs Fall Time tf See specified Test Circuit 0.2 µs Storage Time tstg See specified Test Circuit 1.0 µs * : The 2SA1207/2SC2909 are classified by 10mA hFE as follows : Switching Time Test Circuit 100 R 200 140 S 280 200 T 400 IC=10IB1=–10IB2=10mA (For PNP, the polarity is reversed) Unit (resistance : Ω, capacitance : F)

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71598HA (KT)/4190MO/3187AT/2255MY, TS No.778-1/4, No.778-2/4, No.778-3/4, No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 1998. Specifications and information herein are subject to change without notice. PS No.778-4/4]
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