Download: Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6504/D Silicon Controlled Rectifiers *Motorola preferred devices

Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6504/D Silicon Controlled Rectifiers *Motorola preferred devices .designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. SCRs • Glass Passivated Junctions with Center Gate Fire for Greater Parameter 25 AMPERES RMS Uniformity and Stability 50 thru 800 VOLTS • Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability • Blocking Voltage to 800 Volts G • 300 A Surge Current CapabilityAKCASE 221A-04 (TO-220AB) STYLE 3 MAXIM...
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Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6504/D Silicon Controlled Rectifiers *Motorola preferred devices

.designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. SCRs • Glass Passivated Junctions with Center Gate Fire for Greater Parameter 25 AMPERES RMS Uniformity and Stability 50 thru 800 VOLTS • Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability • Blocking Voltage to 800 Volts G • 300 A Surge Current CapabilityAKCASE 221A-04 (TO-220AB) STYLE 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Value Unit *Peak Forward and Reverse Blocking Voltage(1) VDRM, VRRM Volts (Gate Open, TJ = 25 to 125°C) 2N6504 50 2N6505 100 2N6506 200 2N6507 400 2N6508 600 2N6509 800 Forward Current (TC = 85°C) IT(RMS) 25 Amps (180° Conduction Angle) IT(AV) 16 Peak Non-repetitive Surge Current — 8.3 ms ITSM 300 Amps (1/2 Cycle, Sine Wave) 1.5 ms 350 Forward Peak Gate Power PGM 20 Watts Forward Average Gate Power PG(AV) 0.5 Watt Forward Peak Gate Current IGM 2 Amps Operating Junction Temperature Range TJ –40 to +125 °C Storage Temperature Range Tstg –40 to +150 °C *THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.5 °C/W *Indicates JEDEC Registered Data. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola Thyristor Device Data 1 Motorola, Inc. 1995,

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit *Peak Forward or Reverse Blocking Current IDRM, IRRM (VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C — — 10 µA TJ = 125°C — — 2 mA *Forward “On” Voltage(1) VTM — — 1.8 Volts (ITM = 50 A) *Gate Trigger Current (Continuous dc) TC = 25°C IGT — — 40 mA (Anode Voltage = 12 Vdc, RL = 100 Ohms) TC = –40°C — 25 75 *Gate Trigger Voltage (Continuous dc) VGT — 1 1.5 Volts (Anode Voltage = 12 Vdc, RL = 100 Ohms, TC = –40°C) Gate Non-Trigger Voltage VGD 0.2 — — Volts (Anode Voltage = Rated VDRM, RL = 100 Ohms, TJ = 125°C) *Holding Current IH — 35 40 mA (Anode Voltage = 12 Vdc, TC = –40°C) * Turn-On Time tgt — 1.5 2 µs (ITM = 25 A, IGT = 50 mAdc) Turn-Off Time (VDRM = rated voltage) tq µs (ITM = 25 A, IR = 25 A) — 15 — (ITM = 25 A, IR = 25 A, TJ = 125°C) — 35 — Critical Rate of Rise of Off-State Voltage dv/dt — 50 — V/µs (Gate Open, Rated VDRM, Exponential Waveform) *Indicates JEDEC Registered Data. 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.

FIGURE 1 — AVERAGE CURRENT DERATING FIGURE 2 — MAXIMUM ON-STATE POWER DISSIPATION

130 32 180° 120 α 24αα= CONDUCTION ANGLE α = CONDUCTION ANGLE 90°60° dc 110 α = 30° TJ = 125°C α = 30° 60° 90° 180° dc 8.0 80004.0 8.0 12 16 20 0 4.0 8.0 12 16 20 IT(AV), ON-STATE FORWARD CURRENT (AMPS) IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) 2 Motorola Thyristor Device Data TC , MAXIMUM CASE TEMPERATURE ( ° C) P( A V ) , AVERAGE POWER (WATTS),

FIGURE 3 — MAXIMUM FORWARD VOLTAGE FIGURE 4 — MAXIMUM NON-REPETITIVE SURGE CURRENT

100 300 1 CYCLE 30 250 125°C 20 225 TC = 85°C 25°C f = 60 Hz 10 200 SURGE IS PRECEDED AND 7.0 FOLLOWED BY RATED CURRENT 5.0 1.0 2.0 3.0 4.0 6.0 8.0 10 NUMBER OF CYCLES 3.0

FIGURE 5 — CHARACTERISTICS AND SYMBOLS

2.0 +I 1.0 0.7 IT FORWARD 0.5 REVERSE BREAKOVER BLOCKING V POINT REGION TI 0.3 HI –V DRM +V 0.2 IV RRM

VDRM RRM FORWARD

REVERSE BLOCKING 0.1 AVALANCHE –I REGION 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 REGION vF, INSTANTANEOUS VOLTAGE (VOLTS)

FIGURE 6 — THERMAL RESPONSE

1.0 0.7 0.5 0.3 0.2 ZθJC(t) = RθJC • r(t) 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k t, TIME (ms)

Motorola Thyristor Device Data 3

r(t), TRANSIENT THERMAL RESISTANCEiF, INSTANTANEOUS FORWARD CURRENT (AMPS)(NORMALIZED) ITSM, PEAK SURGE CURRENT (AMP),

TYPICAL TRIGGER CHARACTERISTICS FIGURE 7 — GATE TRIGGER CURRENT FIGURE 8 — GATE TRIGGER VOLTAGE

50 1.1 OFF-STATE VOLTAGE = 12 V 1.0 OFF-STATE VOLTAGE = 12 V 0.9 0.8 0.7 10 0.6 7.0 0.5 5.0 0.4 –60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 9 — HOLDING CURRENT

7.0 5.0 –60 –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) 4 Motorola Thyristor Device Data IG T , GATE TRIGGER CURRENT (mA) I H , HOLDING CURRENT (mA) VG T , GATE TRIGGER VOLTAGE (VOLTS),

PACKAGE DIMENSIONS

–T– SEATING

B F PLANE NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

C 2. CONTROLLING DIMENSION: INCH. T S 3. DIMENSION Z DEFINES A ZONE WHERE ALL

4 BODY AND LEAD IRREGULARITIES ARE

Q ALLOWED.A

INCHES MILLIMETERS123DIM MIN MAX MIN MAX

H STYLE 3: A 0.570 0.620 14.48 15.75 U PIN 1. CATHODE B 0.380 0.405 9.66 10.28 K 2. ANODE C 0.160 0.190 4.07 4.823. GATE Z D 0.025 0.035 0.64 0.884. ANODE F 0.142 0.147 3.61 3.73

G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93

L J 0.014 0.022 0.36 0.55

K 0.500 0.562 12.70 14.27

VRL0.045 0.055 1.15 1.39

N 0.190 0.210 4.83 5.33

GJQ0.100 0.120 2.54 3.04 D R 0.080 0.110 2.04 2.79

S 0.045 0.055 1.15 1.39

N T 0.235 0.255 5.97 6.47

U 0.000 0.050 0.00 1.27 V 0.045 ––– 1.15 ––– Z ––– 0.080 ––– 2.04

CASE 221A-04

(TO–220AB)

Motorola Thyristor Device Data 5

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 6 Motorola Thyristor Device Data ◊ 2N6504/D]
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