Download: DISCRETE SEMICONDUCTORS DATA SHEET BAS15 High-speed diode Product specification 1996 Apr 03 Supersedes data of April 1992 File under Discrete Semiconductors, SC01

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D050 BAS15 High-speed diode Product specification 1996 Apr 03 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Hermetically sealed leaded glass The BAS15 is a high-speed switching diode fabricated in planar technology, SOD68 (DO-34) package and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) • High switching speed: max. 4 ns package. • Continuous reverse voltage: max. 50 V • Repetitive peak reverse voltage: max. 50 V • Repetitive peak forward current: handbook, halfpkage a ma...
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, halfpage M3D050

BAS15 High-speed diode

Product specification 1996 Apr 03 Supersedes data of April 1992 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION • Hermetically sealed leaded glass The BAS15 is a high-speed switching diode fabricated in planar technology, SOD68 (DO-34) package and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) • High switching speed: max. 4 ns package. • Continuous reverse voltage: max. 50 V • Repetitive peak reverse voltage: max. 50 V • Repetitive peak forward current: handbook, halfpkage a max. 225 mA MAM156 • Forward voltage: max. 1.1 V. APPLICATIONS The diode is type branded. • High-speed switching Fig.1 Simplified outline (SOD68; DO-34) and symbol. • Protection diodes in reed relays. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 50 V VR continuous reverse voltage − 50 V IF continuous forward current see Fig.2; note 1 − 100 mA IFRM repetitive peak forward current − 225 mA IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs − 4At= 1 ms − 1At= 1 s − 0.5 A Ptot total power dissipation Tamb = 25 °C; note 1 − 350 mW Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. 1996 Apr 03 2, ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage see Fig.3 IF = 1 mA − 700 mV IF = 10 mA − 850 mV IF = 100 mA − 1.1 V IR reverse current see Fig.5 VR = 30 V − 50 nA VR = 50 V − 200 nA VR = 30 V; Tj = 150 °C − 75 µA VR = 50 V; Tj = 150 °C − 100 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 − 2 pF trr reverse recovery time when switched from IF = 10 mA to − 4 ns IR = 60 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 Vfr forward recovery voltage when switched from IF = 50 mA; − 2.5 V tr = 20 ns; see Fig.8 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 500 K/W Note 1. Device mounted on a printed circuit-board without metallization pad. 1996 Apr 03 3,

GRAPHICAL DATA

MBG453 MBG465 200 300 handbook, halfpage handbook, halfpage

IF

I (mA)F (mA) (1) (2) (3) 000100 T (oC) 200 0 1amb VF (V) (1) Tj = 175 °C; typical values. (2) Tj = 25 °C; typical values. Device mounted on a FR4 printed-circuit board; lead length 10 mm. (3) Tj = 25 °C; maximum values.

Fig.2 Maximum permissible continuous forward Fig.3 Forward current as a function of

current as a function of ambient temperature. forward voltage. MBG704 handbook, full pagewidth

IFSM

(A) 10−1 1 10 102 103 t 10 p (µs) Based on square wave currents. Tj = 25 °C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

1996 Apr 03 4, 3 MGD00810 MGD004 handbook, halfpage 1.2 I handbook, halfpageR (µ CA) d 2 (pF)10 1.0 0.8 0.6 10−1 10−2 0.4 0 100 200 Tj ( oC) 0 10 V 20R (V) VR = 50 V. Solid line; maximum values. Dotted line; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Reverse current as a function of Fig.6 Diode capacitance as a function of reverse junction temperature. voltage; typical values. 1996 Apr 03 5, handbook, full pagewidthtrtptD.U.T. 10% RS = 50 Ω IF IF t rr SAMPLING t

OSCILLOSCOPE

V = VRIFxRSRi= 50 Ω 90% (1)

VR

MGA881 input signal output signal (1) IR = 1 mA.

Fig.7 Reverse recovery voltage test circuit and waveforms.

I1kΩ450ΩIV90% R S = 50 Ω OSCILLOSCOPE V D.U.T. frRi= 50 Ω 10% MGA882tttrtpinput output signal signal

Fig.8 Forward recovery voltage test circuit and waveforms.

1996 Apr 03 6, PACKAGE OUTLINE handbook, full pagewidth 0.55 max 1.6 3.04 max 25.4 min max 25.4 min MSA212 - 1 Dimensions in mm. Fig.9 SOD68 (DO-34).

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Apr 03 7]
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