Download: DISCRETE SEMICONDUCTORS DATA SHEET BAS11; BAS12 Controlled avalanche rectifiers Product specification 1996 Jun 11 Supersedes data of April 1992 File under Discrete Semiconductors, SC01

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D122 BAS11; BAS12 Controlled avalanche rectifiers Product specification 1996 Jun 11 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION These packages are hermetically sealed and fatigue free as coefficients • Glass passivated Rectifier diodes in cavity free of expansion of all used parts are • High maximum operating cylindrical SOD91 glass packages, matched. temperature incorporating Implotec (1) technology. • Low leakage current • Excellent stability (1) Implotec is a trademark of Philips. • Avail...
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, halfpage M3D122

BAS11; BAS12 Controlled avalanche rectifiers

Product specification 1996 Jun 11 Supersedes data of April 1992 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION These packages are hermetically sealed and fatigue free as coefficients • Glass passivated Rectifier diodes in cavity free of expansion of all used parts are • High maximum operating cylindrical SOD91 glass packages, matched. temperature incorporating Implotec (1) technology. • Low leakage current • Excellent stability (1) Implotec is a trademark of Philips. • Available in ammo-pack. k ahandbook, full pagewidth MAM196 Marking code BAS11: S11. Marking code BAS12: S12. Fig.1 Simplified outline (SOD91) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BAS11 − 300 V BAS12 − 400 V VRWM working reverse voltage BAS11 − 300 V BAS12 − 400 V VR continuous reverse voltage BAS11 − 300 V BAS12 − 400 V IF(AV) average forward current averaged over any 20 ms period; − 350 mA Ttp = 75 °C; lead length = 10 mm; see Figs 2 and 4 averaged over any 20 ms period; − 300 mA Tamb = 30 °C; PCB mounting (see Fig.8); see Figs 3 and 4 IFSM non-repetitive peak forward current t = 10 ms half sinewave; − 4 A Tj = Tj max prior to surge; VR = VRRMmax PRRM repetitive peak reverse power t = 10 µs square wave; f = 50 Hz; − 75 W dissipation Tamb = 25 °C Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C 1996 Jun 11 2, ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 300 mA; Tj = Tjmax; see Fig.5 − − 1.0 V IF = 300 mA; see Fig.5 − − 1.1 V V(BR)R reverse avalanche IR = 0.1 mA breakdown voltage BAS11 330 − − V BAS12 440 − − V IR reverse current VR = VRRMmax; see Fig.6 − − 250 nA VR = VRRMmax; Tj = 125 °C; see Fig.6 − − 10 µA trr reverse recovery time when switched from IF = 0.5 A to − − 1 µs IR = 1 A; measured at IR = 0.25 A; see Fig.9 Cd diode capacitance VR = 0 V; f = 1 MHz; see Fig.7 − 20 − pF THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 180 K/W Rth j-a thermal resistance from junction to ambient note 1 340 K/W Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.8. For more information please refer to the “General Part of Handbook SC01”. 1996 Jun 11 3, GRAPHICAL DATA MGD293 MGD295 0.6 0.4 handbook, halfpage handbook, halfpage IF(AV) IF(AV) (A) 0.3 0.4 0.2 0.2 0.100040 80 120 160 200 0 40 80 120 160 200 T (otp C) Tamb (°C) Lead length 10 mm. Device mounted as shown in Fig.8. a = 1.57; VR = VRRMmax; δ = 0.5. a = 1.57; VR = VRRMmax; δ = 0.5. Fig.2 Maximum permissible average forward Fig.3 Maximum permissible average forward current as a function of tie-point temperature current as a function of ambient temperature (including losses due to reverse leakage). (including losses due to reverse leakage). MGD292 MGD294 0.5 5 handbook, halfpage handbook, halfpage P IF (W) (A) a = 3 2.5 2 1.57 0.4 4 1.42 0.3 3 0.2 2 0.110000.1 0.2 0.3 0.40123IVF(AV)(A) F (V) a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Solid line: Tj = 25 °C. Fig.4 Maximum steady state power dissipation Dotted line: Tj = 150 °C. (forward plus leakage current losses, excluding switching losses) as a function Fig.5 Forward current as a function of forward of average forward current. voltage; maximum values. 1996 Jun 11 4, MGD297 MGD296 - 1 handbook1 2 10 , 0halfpage handbook, halfpage IR C (µA) d (pF) 10−11050 100 150 200 10−1 1 10 102 103 T (oC) VR(V)j VR = VRRMmax. f = 1 MHz; Tj = 25 °C. Fig.6 Reverse current as a function of junction Fig.7 Diode capacitance as a function of reverse temperature; maximum values. voltage; typical values. handbook, halfpage MGA200 Dimensions in mm. Fig.8 Device mounted on a printed-circuit board. 1996 Jun 11 5, handbook, full pagewidth IDUT F + 0.5 t 10 Ω 25 V rr1Ω50Ω0t0.25 0.5

IR

1 MAM057 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.9 Test circuit and reverse recovery time waveform and definition. 1996 Jun 11 6, PACKAGE OUTLINE 3.5 max handbook, full pagewidth 0.55 max 1.7 29 min 3.0 max 29 min MBC053max Dimensions in mm. Fig.10 SOD91.

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jun 11 7]
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