Download: DISCRETE SEMICONDUCTORS DATA SHEET BAX12 Controlled avalanche diode Product specification 1996 Apr 23 Supersedes data of April 1992 File under Discrete Semiconductors, SC01

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12 Controlled avalanche diode Product specification 1996 Apr 23 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Hermetically sealed leaded glass The BAX12 is a controlled avalanche diode fabricated in planar technology, and SOD27 (DO-35) package encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) • Switching speed: max. 50 ns package. • General application • Continuous reverse voltage: max. 90 V • Repetitive peak reverse voltage: max. 90 V • Repetitive peak forward current: handbook, halfp...
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DISCRETE SEMICONDUCTORS

DATA SHEET

M3D176

BAX12 Controlled avalanche diode

Product specification 1996 Apr 23 Supersedes data of April 1992 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION • Hermetically sealed leaded glass The BAX12 is a controlled avalanche diode fabricated in planar technology, and SOD27 (DO-35) package encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) • Switching speed: max. 50 ns package. • General application • Continuous reverse voltage: max. 90 V • Repetitive peak reverse voltage: max. 90 V • Repetitive peak forward current: handbook, halfpagke a max. 800 mA • Repetitive peak reverse current: MAM246 max. 600 mA • Forward voltage: max. 1 V • Capable of absorbing transients repetitively. Marking code: BAX12. Fig.1 Simplified outline (SOD27; DO35) and symbol.

APPLICATIONS

• Switching of inductive loads in semi-electronic telephone exchanges. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage note 1 − 90 V VR continuous reverse voltage note 1 − 90 V IF continuous forward current see Fig.2; note 2 − 400 mA IFRM repetitive peak forward current − 800 mA IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs − 55At= 100 µs − 15At= 10 ms − 9 A Ptot total power dissipation Tamb = 25 °C; note 2 − 450 mW IRRM repetitive peak reverse current − 600 mA ERRM repetitive peak reverse energy tp ≥ 50 µs; f ≤ 20 Hz; Tj = 25 °C − 5.0 mJ Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C Notes 1. It is allowed to exceed this value; see Figs 8 and 9. Care should be taken not to exceed the IRRM rating. 2. Device mounted on an FR4 printed circuit-board; lead length 10 mm. 1996 Apr 23 2, ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage see Fig.3 IF = 10 mA − 750 mV IF = 50 mA − 840 mV IF = 100 mA − 900 mV IF = 200 mA − 1.0 V IF = 400 mA − 1.25 V IR reverse current see Fig.5 VR = 90 V − 100 nA VR = 90 V; Tj = 150 °C − 100 µA V(BR)R reverse avalanche breakdown voltage IR = 1 mA 120 170 V Cd diode capacitance f = 1 MHz; VR = 0; − 35 pF see Fig.6 trr reverse recovery time when switched from − 50 ns IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA; see Fig.10 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 375 K/W Note 1. Device mounted on a printed circuit-board without metallization pad. 1996 Apr 23 3, GRAPHICAL DATA MBG455 MBG463 500 600 handbook, halfpage handbook, halfpage

IF

(mA) IF 400 (mA) (1) (2) (3) 000100To200012amb ( C) VF (V) (1) Tj = 175 °C; typical values. (2) Tj = 25 °C; typical values. Device mounted on an FR4 printed-circuit board; lead length 10 mm. (3) Tj = 25 °C; maximum values. Fig.2 Maximum permissible continuous forward Fig.3 Forward current as a function of current as a function of ambient temperature. forward voltage. MBG702 handbook, full pagewidth

IFSM

(A) 10−1 1 10 102 103 4t 10p (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Apr 23 4, MBG696 handbook, full pagewidth

IR

(nA) 0 100 T (oC) 200j VR = 90 V. Solid line; maximum values. Dotted line; typical values. Fig.5 Reverse current as a function of junction temperature. handbook, halfpage MGD003 MBG701 40 3 handbook, halfpage 10 Cd (pF) PRRM (W) 102 (1) 01010 20 30 10−2 −1VR (V) 101t(ms) 10 Solid line; rectangular waveform; δ ≤ 0.01. Dotted line; triangular waveform; δ ≤ 0.02. (1) Limited by IRMM = 600 mA. f = 1 MHz; Tj = 25 °C. Fig.7 Maximum permissible repetitive peak Fig.6 Diode capacitance as a function of reverse reverse power as a function of the pulse voltage; typical values. duration T ≥ 50 ms; Tj = 25 °C. 1996 Apr 23 5, handbook, halfpage MBG699 MBG698 V 600 R handbook, halfpage

IR

(mA) time (1) (2) (3) (4)

IR

t (rectangular waveform) time t (triangularδt= 0 waveform)

T

100 150 VR (V) 200 T Reverse voltages higher than the VR ratings are allowed, provided: a. The transient energy ≤ 7.5 mJ at PRRM ≤30 W; Tj = 25 °C; the transient energy ≤ 5 mJ at PRRM = 120 W; Tj = 25 °C (see Fig.7). b. T ≥ 50 ms; δ ≤0.01 (rectangular waveform) (see Fig.9). δ ≤0.02 (triangular waveform) (see Fig.9). With increasing temperature, the maximum permissible transient energy must be decreased by 0.03 mJ/K. (1) Tj = 25 °C; minimum values. (2) Tj = 175 °C; minimum values. (3) Tj = 25 °C; maximum values. (4) Tj = 175 °C; maximum values.

Fig.8 Reverse current as a function of continuous Fig.9 Peak reverse voltage and current

reverse voltage. test pulses. 1996 Apr 23 6, handbook, full pagewidthtrtptD.U.T. 10% RS = 50 Ω IF IF t rr SAMPLING t

OSCILLOSCOPE

V = VRIFxRSRi= 50 Ω 90% (1)

VR

MGA881 input signal output signal Input signal: reverse pulse rise time tr = 0.6 ns; reverse pulse duration tp = 100 ns; duty factor δ = 0.05. Oscilloscope: rise time tr = 0.35 ns. Circuit capacitance: C ≤ 1 pF (oscilloscope input capacitance + parasitic capacitance). (1) IR = 3 mA.

Fig.10 Reverse recovery voltage test circuit and waveforms.

1996 Apr 23 7, PACKAGE OUTLINE handbook, full pagewidth 0.56 max 1.85 4.25 max 25.4 min MLA428 - 1 max 25.4 min Dimensions in mm. Fig.11 SOD27 (DO-35).

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Apr 23 8]
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