Download: DISCRETE SEMICONDUCTORS DATA SHEET BAV170 Low-leakage double diode Product specification 1996 Mar 13 Supersedes data of June 1994 File under Discrete Semiconductors, SC01

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BAV170 Low-leakage double diode Product specification 1996 Mar 13 Supersedes data of June 1994 File under Discrete Semiconductors, SC01 FEATURES PINNING • Plastic SMD package PIN DESCRIPTION • Low leakage current: typ. 3 pA 1 anode • Switching time: typ. 0.8 µs 2 anode • Continuous reverse voltage: 3 common cathode max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: handbook, 4 columns21max. 500 mA. APPLICATION21• Low-leakage current applications in surface mounted circuits. 3 Top view MAM108 DESCRIPT...
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DISCRETE SEMICONDUCTORS

DATA SHEET

ook, halfpage M3D088

BAV170 Low-leakage double diode

Product specification 1996 Mar 13 Supersedes data of June 1994 File under Discrete Semiconductors, SC01, FEATURES PINNING • Plastic SMD package PIN DESCRIPTION • Low leakage current: typ. 3 pA 1 anode • Switching time: typ. 0.8 µs 2 anode • Continuous reverse voltage: 3 common cathode max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: handbook, 4 columns21max. 500 mA. APPLICATION21• Low-leakage current applications in surface mounted circuits. 3 Top view MAM108

DESCRIPTION

Epitaxial, medium-speed switching, Marking code: JXp. double diode in a small plastic SOT23 SMD package. The diodes are in Fig.1 Simplified outline (SOT23) and symbol. common cathode configuration. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM repetitive peak reverse voltage − 85 V VR continuous reverse voltage − 75 V IF continuous forward current single diode loaded; see Fig.2; note 1 − 215 mA double diode loaded; see Fig.2; note 1 − 125 mA IFRM repetitive peak forward current − 500 mA IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 tp = 1 µs − 4 A tp = 1 ms − 1 A tp = 1 s − 0.5 A Ptot total power dissipation Tamb = 25 °C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Note 1. Device mounted on a FR4 printed-circuit board. 1996 Mar 13 2, ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Per diode VF forward voltage see Fig.3 IF = 1 mA − 900 mV IF = 10 mA − 1000 mV IF = 50 mA − 1100 mV IF = 150 mA − 1250 mV IR reverse current see Fig.5 VR = 75 V 0.003 5 nA VR = 75 V; Tj = 150 °C 3 80 nA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 2 − pF trr reverse recovery time when switched from IF = 10 mA to 0.8 3 µs IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 360 K/W Rth j-a thermal resistance from junction to ambient note 1 500 K/W Note 1. Device mounted on a FR4 printed-circuit board. 1996 Mar 13 3,

GRAPHICAL DATA

MBG521 MLB752 - 1 300 300 handbook, halfpage handbook, halfpage IF IF (mA) (mA) 200 200 (1) (2) (3) (1) 100 100 (2) 000100 T oamb ( C) 200 0 0.4 0.8 1.2 1.6V F (V) Device mounted on a FR4 printed-circuit board. (1) Tj = 150 °C; typical values. (1) Single diode loaded. (2) Tj = 25 °C; typical values. (2) Double diode loaded. (3) Tj = 25 °C; maximum values.

Fig.2 Maximum permissible continuous forward Fig.3 Forward current as a function of forward

current as a function of ambient temperature. voltage; per diode. 2 MBG70410 handbook, full pagewidth

IFSM

(A) 10−1 1 10 102 103 4tp (µs) Based on square wave currents; Tj = 25 °C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode.

1996 Mar 13 4, MLB754 2 MBG526 handboo1k,0 halfpage 2handbook, halfpageIR(nA) 10 (1) Cd (pF) 10 1 (2) 10 2 1030050 100 150 2000510 15 20V (V) T j ( o C) R VR = 75 V. (1) Maximum values. (2) Typical values. f = 1 MHz; Tj = 25 °C.

Fig.5 Reverse current as a function of junction Fig.6 Diode capacitance as a function of reverse

temperature; per diode. voltage; per diode; typical values. handbook, full pagewidthtrtptD.U.T. 10% RS = 50 Ω IFIFtrr SAMPLING t

OSCILLOSCOPE

V = VRIFxRSRi= 50 Ω 90% (1)

VR

MGA881 input signal output signal

Fig.7 Reverse recovery time test circuit and waveforms.

1996 Mar 13 5, PACKAGE OUTLINE 3.0 ok, full pagewidth 2.8

B

1.9 0.150 0.75 0.090 0.95 A 0.2MAB0.6021o0.110 max 1.4 2.5max 1.2 max 10o max 1.1 0 max 30o 0.48 0.1 0.1MABMBC846 max TOP VIEW Dimensions in mm. Fig.8 SOT23.

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Mar 13 6]
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