Download: DISCRETE SEMICONDUCTORS DATA SHEET BAT54W series Schottky barrier (double) diodes Product specification 1996 Mar 19 Supersedes data of October 1993 File under Discrete Semiconductors, SC01

DISCRETE SEMICONDUCTORS DATA SHEET M3D088 BAT54W series Schottky barrier (double) diodes Product specification 1996 Mar 19 Supersedes data of October 1993 File under Discrete Semiconductors, SC01 FEATURES PINNING • Low forward voltage BAT54 • Guard ring protected PIN W AW CW SW 3handbook, halfpage • Very small SMD package. 1 a k1 a1 a1122n.c. k2 a2 k2 APPLICATIONS3ka, a MLC3601 2 k1, k2 k1, a2 • Ultra high-speed switching • Voltage clamping Fig.3 BAT54AW diode • Protection circuits handbook, 2 columns 3 configuration (symbol). • Blocking diodes. DESCRIPTION Planar Schottky barrier diodes encap...
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DISCRETE SEMICONDUCTORS

DATA SHEET

M3D088

BAT54W series Schottky barrier (double) diodes

Product specification 1996 Mar 19 Supersedes data of October 1993 File under Discrete Semiconductors, SC01, FEATURES PINNING • Low forward voltage BAT54 • Guard ring protected PIN W AW CW SW 3handbook, halfpage • Very small SMD package. 1 a k1 a1 a1122n.c. k2 a2 k2 APPLICATIONS3ka, a MLC3601 2 k1, k2 k1, a2 • Ultra high-speed switching • Voltage clamping Fig.3 BAT54AW diode • Protection circuits handbook, 2 columns 3 configuration (symbol). • Blocking diodes.

DESCRIPTION

Planar Schottky barrier diodes encapsulated in a SOT323 very small1212plastic SMD package. Single diodes Top view MBC870 and double diodes with different MLC359 pinning are available. Fig.1 Simplified outline (SOT323) and pin Fig.4 BAT54CW diode MARKING configuration. configuration (symbol).

MARKING

TYPE NUMBER

CODE

BAT54W L433handbook, halfpage handbook, halfpage BAT54AW 42 BAT54CW 431212n.c. BAT54SW 44 MLC357 MLC358 Fig.2 BAT54W single diode Fig.5 BAT54SW diode configuration (symbol). configuration (symbol). 1996 Mar 19 2, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage − 30 V IF continuous forward current − 200 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 − 300 mA IFSM non-repetitive peak forward current tp < 10 ms − 600 mA Ptot total power dissipation (per package) Tamb ≤ 25 °C − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C Tamb operating ambient temperature −65 +125 °C ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode VF forward voltage see Fig.6 IF = 0.1 mA 240 mV IF = 1 mA 320 mV IF = 10 mA 400 mV IF = 30 mA 500 mV IF = 100 mA 800 mV IR reverse current VR = 25 V; note 1; see Fig.7 2 µA trr reverse recovery time when switched from IF = 10 mA to 5 ns IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA: see Fig.9 Cd diode capacitance f = 1 MHz; VR = 1 V; see Fig.8 10 pF Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 625 K/W Note 1. Refer to SOT323 standard mounting conditions. 1996 Mar 19 3, GRAPHICAL DATA MSA892 MSA893 3 10 3 handboo1k,0 halfpage I (1) (2) (3) IF R (1) (mA) (µA) 102 10 2 (2) 10 10 (1) (2) (3) 1 1 (3) 10 1 10100.4 0.8 1.2 0 10 20 30 VF (V) V R (V) (1) Tamb = 125 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (3) Tamb = 25 °C. Fig.6 Forward current as a function of forward Fig.7 Reverse current as a function of reverse voltage; typical values. voltage; typical values. MSA891 Cd (pF) handbIFook, halfpage dIF dt trr 10% t Q dIr R dt 90% 0 IRt010 20 30 f MRC129VR(V) f = 1 MHz; Tamb = 25 °C. Fig.8 Diode capacitance as a function of reverse voltage; typical values. Fig.9 Reverse recovery definitions. 1996 Mar 19 4, PACKAGE OUTLINE 1.00 handbook, full pagewidth max 0.4 0.1 0.2MA0.2MB0.2 max 0.2

A

2.2 1.35 2.0 1.15120.3 0.1 1.4 0.25 1.2 0.10 2.2

B

1.8 MBC871 Dimensions in mm. Fig.10 SOT323.

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Mar 19 5]
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