Download: DISCRETE SEMICONDUCTORS DATA SHEET BAS32L High-speed diode Product specification 1996 Apr 23 Supersedes data of November 1993 File under Discrete Semiconductors, SC01

DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page (Datasheet) M3D054 BAS32L High-speed diode Product specification 1996 Apr 23 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Small hermetically sealed glass The BAS32L is a high-speed switching diode fabricated in planar technology, SMD package and encapsulated in the small hermetically sealed glass SOD80C SMD • High switching speed: max. 4 ns package. • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 75 V handbook, 4 columnska• Repetitive peak forward current: max. 450 mA...
Author: Begum Shared: 8/19/19
Downloads: 1867 Views: 3875

Content

DISCRETE SEMICONDUCTORS

DATA SHEET

1/3 page (Datasheet) M3D054

BAS32L High-speed diode

Product specification 1996 Apr 23 Supersedes data of November 1993 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION • Small hermetically sealed glass The BAS32L is a high-speed switching diode fabricated in planar technology, SMD package and encapsulated in the small hermetically sealed glass SOD80C SMD • High switching speed: max. 4 ns package. • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 75 V handbook, 4 columnska• Repetitive peak forward current: max. 450 mA MAM061 • Forward voltage: max. 1 V. APPLICATIONS Cathode indicated by black band. • High-speed switching Fig.1 Simplified outline (SOD80C) and symbol. • Fast logic applications. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 75 V VR continuous reverse voltage − 75 V IF continuous forward current see Fig.2; note 1 − 200 mA IFRM repetitive peak forward current − 450 mA IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs − 4At= 1 ms − 1At= 1 s − 0.5 A Ptot total power dissipation Tamb = 25 °C; note 1 − 500 mW Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C Note 1. Device mounted on an FR4 printed-circuit board. 1996 Apr 23 2, ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage see Fig.3 IF = 5 mA 620 750 mV IF = 100 mA − 1000 mV IF = 100 mA; Tj = 100 °C − 930 mV IR reverse current see Fig.5 VR = 20 V − 25 nA VR = 75 V − 5 µA VR = 20 V; Tj = 150 °C − 50 µA VR = 75 V; Tj = 150 °C − 100 µA V(BR)R reverse breakdown voltage IR = 100 µA 100 − V Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 2 pF trr reverse recovery time when switched from IF = 10 mA to 4 ns IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 Vfr forward recovery voltage when switched from IF = 50 mA; − 2.5 V tr = 20 ns; see Fig.8 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 300 K/W Rth j-a thermal resistance from junction to ambient note 1 350 K/W Note 1. Device mounted on an FR4 printed-circuit board. 1996 Apr 23 3,

GRAPHICAL DATA

MBG451 MBG464 300 600 handbook, halfpage handbook, halfpage I IF F (mA) (mA) 200 400 (1) (2) (3) 100 200000100 Tamb ( oC) 20001V(V) 2F (1) Tj = 175 °C; typical values. (2) Tj = 25 °C; typical values. Device mounted on an FR4 printed-circuit board. (3) Tj = 25 °C; maximum values.

Fig.2 Maximum permissible continuous forward Fig.3 Forward current as a function of

current as a function of ambient temperature. forward voltage. MBG704 handbook, full pagewidth

IFSM

(A) 10−1 1 10 102 103 4tp (µs) Based on square wave currents. Tj = 25 °C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

1996 Apr 23 4, MGD006 MGD004 handbook, halfpage 1.2 I handbook, halfpageR µ C( A) d 2 (pF)10 1.0 (1) (2) (3) 0.8 0.6 10−1 10−2 0.4 0 100 200 T (oC) 0 10 V (V) 20j R (1) VR = 75 V; maximum values. (2) VR = 75 V; typical values. (3) VR = 20 V; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Reverse current as a function of Fig.6 Diode capacitance as a function of reverse junction temperature. voltage; typical values. 1996 Apr 23 5, handbook, full pagewidthtrtptD.U.T. 10% R = 50 Ω IS F IF t rr SAMPLING t

OSCILLOSCOPE

V = VRIFxRSRi= 50 Ω 90% (1)

VR

MGA881 input signal output signal (1) IR = 1 mA.

Fig.7 Reverse recovery voltage test circuit and waveforms.

I1kΩ450ΩIV90% R S = 50 Ω OSCILLOSCOPE V D.U.T. frRi= 50 Ω 10% MGA882tttrtpinput output signal signal

Fig.8 Forward recovery voltage test circuit and waveforms.

1996 Apr 23 6, PACKAGE OUTLINE handbook, full pagewidth 1.60 O 1.45 0.3 0.3 3.7 MBA390 - 2 3.3 Dimensions in mm. Fig.9 SOD80C.

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Apr 23 7]
15

Similar documents

DISCRETE SEMICONDUCTORS DATA SHEET BAS29; BAS31; BAS35 General purpose controlled avalanche (double) diodes Product specification 1996 Apr 23 Supersedes data of November 1993
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche (double) diodes Product specification 1996 Apr 23 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES PINNING • Small plastic SMD package DESCRIPTION •
DISCRETE SEMICONDUCTORS DATA SHEET BAS28 High-speed double diode Product specification 1996 Apr 03 Supersedes data of November 1993 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D070 BAS28 High-speed double diode Product specification 1996 Apr 03 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION PINNING • Small plastic SMD package The BAS28 consists of two PIN DESCRIPTION •
Order this document SEMICONDUCTOR TECHNICAL DATA by BAS21LT1/D
Order this document SEMICONDUCTOR TECHNICAL DATA by BAS21LT1/D Motorola Preferred Device31CATHODE ANODE MAXIMUM RATINGS 3 Rating Symbol Value Unit 1 Continuous Reverse Voltage VR 250 Vdc 2 Peak Forward Current IF 200 mAdc CASE 318–08, STYLE 8 Peak Forward Surge Current IFM(surge) 625 mAdc SOT–23 (TO
DISCRETE SEMICONDUCTORS DATA SHEET BAS216 High-speed switching diode Product specification 1996 Apr 03 Supersedes data of April 1995 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D179 BAS216 High-speed switching diode Product specification 1996 Apr 03 Supersedes data of April 1995 File under Discrete Semiconductors, SC01 A6 FEATURES APPLICATIONS DESCRIPTION • Small ceramic SMD package • High-speed switching in e.g. The
DISCRETE SEMICONDUCTORS DATA SHEET BAS19; BAS20; BAS21 General purpose diodes Product specification 1996 Apr 16 Supersedes data of November 1993 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BAS19; BAS20; BAS21 General purpose diodes Product specification 1996 Apr 16 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES MARKING PINNING • Small plastic SMD package MARKING PIN DESCRIPTION TYPE NUMBER
Order this document SEMICONDUCTOR TECHNICAL DATA by BAS16WT1/D
Order this document SEMICONDUCTOR TECHNICAL DATA by BAS16WT1/D Motorola Preferred Device31CATHODE ANODE MAXIMUM RATINGS (TA = 25°C) 1 Rating Symbol Max Unit 2 Continuous Reverse Voltage VR 75 V CASE 419–02, STYLE 2 Recurrent Peak Forward Current IR 200 mA SC–70/SOT–323 Peak Forward Surge Current IFM
DISCRETE SEMICONDUCTORS DATA SHEET BAS16W High-speed diode Product specification 1996 Apr 03 Supersedes data of December 1993 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET M3D102 BAS16W High-speed diode Product specification 1996 Apr 03 Supersedes data of December 1993 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION PINNING • Very small plastic SMD package The BAS16W is a high-speed PIN DESCRIPTION • High switching spee
Order this document SEMICONDUCTOR TECHNICAL DATA by BC635/D NPN Silicon
Order this document SEMICONDUCTOR TECHNICAL DATA by BC635/D NPN Silicon COLLECTOR BASE EMITTER MAXIMUM RATINGS 2 BC BC BC Rating Symbol 635 637 639 Unit CASE 29–04, STYLE 14 Collector–Emitter Voltage VCEO 45 60 80 Vdc TO–92 (TO–226AA) Collector–Base Voltage VCBO 45 60 80 Vdc Emitter–Base Voltage VEB
Typical Characteristics
BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCER Collector-Emitter Voltage at RBE=1KΩ : BC635 45 V VCES C
Typical Characteristics
BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 ... BC 550 1 TO-92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCB
Order this document SEMICONDUCTOR TECHNICAL DATA by BC556/D PNP Silicon
Order this document SEMICONDUCTOR TECHNICAL DATA by BC556/D PNP Silicon COLLECTOR BASE EMITTER MAXIMUM RATINGS BC BC BC23Rating Symbol 556 557 558 Unit Collector–Emitter Voltage VCEO –65 –45 –30 Vdc CASE 29–04, STYLE 17 TO–92 (TO–226AA) Collector–Base Voltage VCBO –80 –50 –30 Vdc Emitter–Base Voltag
DISCRETE SEMICONDUCTORS DATA SHEET BC556; BC557 PNP general purpose transistors Product specification 1999 Apr 15 Supersedes data of 1997 Mar 27
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC556; BC557 PNP general purpose transistors Product specification 1999 Apr 15 Supersedes data of 1997 Mar 27 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 65 V). 1 emitter 2 base APPLICATIONS 3 collector • G
Typical Characteristics
BC546/547/548/549/550 Switching and Amplifier • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 ... BC560 1 TO-92 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO C
DISCRETE SEMICONDUCTORS DATA SHEET BC546; BC547 NPN general purpose transistors Product specification 1999 Apr 15 Supersedes data of 1997 Mar 04
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC546; BC547 NPN general purpose transistors Product specification 1999 Apr 15 Supersedes data of 1997 Mar 04 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 65 V). 1 emitter 2 base APPLICATIONS 3 collector • G
ON Semiconductor BC372 High Voltage BC373 Darlington Transistors NPN Silicon MAXIMUM RATINGS
ON Semiconductor BC372 High Voltage BC373 Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector–Emitter Voltage VCES 100 80 Vdc 1 Collector–Base Voltage VCBO 100 80 Vdc 3 Emitter–Base Voltage VEBO 12 Vdc CASE 29–11, STYLE 1 Collector Current — Continuous IC 1.0
PNP General Purpose Amplifier
BC369 B TO-92CEPNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 77. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter
NPN General Purpose Amplifier
BC368 B TO-92CENPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A. Sourced from Process 37. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter
DISCRETE SEMICONDUCTORS DATA SHEET BC337 NPN general purpose transistor Product specification 1999 Apr 15 Supersedes data of 1997 Mar 10
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC337 NPN general purpose transistor Product specification 1999 Apr 15 Supersedes data of 1997 Mar 10 FEATURES PINNING • High current (max. 500 mA) PIN DESCRIPTION • Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS 3 collector • General
Typical Characteristics
BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 1 TO-92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCES Co
DISCRETE SEMICONDUCTORS DATA SHEET BC327 PNP general purpose transistor Product specification 1999 Apr 15 Supersedes data of 1997 Mar 10
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC327 PNP general purpose transistor Product specification 1999 Apr 15 Supersedes data of 1997 Mar 10 FEATURES PINNING • High current (max. 500 mA) PIN DESCRIPTION • Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS 3 collector • General
Order this document SEMICONDUCTOR TECHNICAL DATA by BC161–16/D PNP Silicon
Order this document SEMICONDUCTOR TECHNICAL DATA by BC161–16/D PNP Silicon COLLECTOR BASE EMITTER MAXIMUM RATINGS Rating Symbol Value Unit21Collector–Emitter Voltage VCEO –60 Vdc CASE 79–04, STYLE 1 TO–39 (TO–205AD) Collector–Base Voltage VCBO –60 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Cur
DATA SHEET BBY62 UHF variable capacitance double diode
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D070 BBY62 UHF variable capacitance double diode Product specification 1996 May 03 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES • Excellent linearity • Small plastic SMD package • C28:1.9 pF; ratio: 8.3. ha
DATA SHEET BBY42 VHF variable capacitance diode
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BBY42 VHF variable capacitance diode Product specification 1996 May 03 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES • Excellent linearity • Small plastic SMD package • C28: 2.7 pF; ratio: 14. handbook,
DATA SHEET BBY40 VHF variable capacitance diode
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BBY40 VHF variable capacitance diode Product specification 1996 May 03 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES • Excellent linearity • Small plastic SMD package • C25: 4.6 pF; ratio: 5.5. handbook
DATA SHEET BBY39 UHF variable capacitance double diode
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BBY39 UHF variable capacitance double diode Product specification 1996 May 03 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES • Excellent linearity • Small plastic SMD package • C28: 1.9 pF; ratio: 8.3. h
DATA SHEET BBY31 UHF variable capacitance diode
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BBY31 UHF variable capacitance diode Product specification 1996 May 03 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES • Excellent linearity • Small plastic SMD package • C28: 1.9 pF; ratio: 8.3. handbook
DATA SHEET BB911/A VHF variable capacitance diode
DISCRETE SEMICONDUCTORS DATA SHEET M3D051 BB911/A VHF variable capacitance diode Product specification 1996 May 03 Supersedes data of December 1993 File under Discrete Semiconductors, SC01 FEATURES • High linearity handbook, halfpage • kMatched to 2.5% a • Hermetically sealed leaded glass SOD68 (DO-
DATA SHEET BB910 VHF variable capacitance diode
DISCRETE SEMICONDUCTORS DATA SHEET M3D051 BB910 VHF variable capacitance diode Product specification 1996 May 03 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES • Excellent linearity • Matched to 2.5% handbook, halfpagke a • Hermetically sealed leaded glass SOD68 (DO-
DATA SHEET BB909A; BB909B VHF variable capacitance diodes
DISCRETE SEMICONDUCTORS DATA SHEET M3D051 BB909A; BB909B VHF variable capacitance diodes Product specification 1996 May 03 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES • Excellent linearity • Matched to 2.5% handbook, halfpagke a • Hermetically sealed leaded glass
DATA SHEET BB901 VHF variable capacitance diode
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BB901 VHF variable capacitance diode Product specification 1996 May 03 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES • Excellent linearity • Small plastic SMD package • C28: 1 pF; ratio: 13.5 handbook,