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Order this document SEMICONDUCTOR TECHNICAL DATA by BAS21LT1/D Motorola Preferred Device31CATHODE ANODE MAXIMUM RATINGS 3 Rating Symbol Value Unit 1 Continuous Reverse Voltage VR 250 Vdc 2 Peak Forward Current IF 200 mAdc CASE 318–08, STYLE 8 Peak Forward Surge Current IFM(surge) 625 mAdc SOT–23 (TO–236AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board(1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient RJA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25°C Derate above 25°C 2.4 mW/°C Th...
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Order this document SEMICONDUCTOR TECHNICAL DATA by BAS21LT1/D

Motorola Preferred Device31CATHODE ANODE MAXIMUM RATINGS 3 Rating Symbol Value Unit 1 Continuous Reverse Voltage VR 250 Vdc 2 Peak Forward Current IF 200 mAdc CASE 318–08, STYLE 8 Peak Forward Surge Current IFM(surge) 625 mAdc SOT–23 (TO–236AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board(1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient RJA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient RJA 417 °C/W Junction and Storage Temperature TJ, Tstg –55 to +150 °C DEVICE MARKING BAS21LT1 = JS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current IR µAdc (VR = 200 Vdc) — 1.0 (VR = 200 Vdc, TJ = 150°C) — 100 Reverse Breakdown Voltage V(BR) 250 — Vdc (IBR = 100 µAdc) Forward Voltage VF mV (IF = 100 mAdc) — 1000 (IF = 200 mAdc) — 1250 Diode Capacitance CD — 5.0 pF (VR = 0, f = 1.0 MHz) Reverse Recovery Time trr — 50 ns (IF = IR = 30 mAdc, RL = 100 Ω) 1. FR–5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data 1 Motorola, Inc. 1996, 820 Ω

I

+10 V F2.0kttt0.1 µFrp100 µH IF 10% trr t 0.1 µF D.U.T. 90% 50 Ω OUTPUT 50 Ω INPUT iR(REC) = 3.0 mAI PULSE SAMPLING V RR OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (IF = IR = 30 mA; MEASURED at iR(REC) = 3.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr

Figure 1. Recovery Time Equivalent Test Circuit

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data,

INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total interface between the board and the package. With the design. The footprint for the semiconductor packages must correct pad geometry, the packages will self align when be the correct size to insure proper solder connection subjected to a solder reflow process. 0.037 0.037 0.95 0.95 0.079 2.0 0.035 0.9 0.031 inches 0.8 mm SOT–23 SOT–23 POWER DISSIPATION The power dissipation of the SOT–23 is a function of the SOLDERING PRECAUTIONS pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated Power dissipation for a surface mount device is determined to a high temperature, failure to complete soldering within a by TJ(max), the maximum rated junction temperature of the short time could result in device failure. Therefore, the die, RθJA, the thermal resistance from the device junction to following items should always be observed in order to ambient, and the operating temperature, TA. Using the minimize the thermal stress to which the devices are values provided on the data sheet for the SOT–23 package, subjected. PD can be calculated as follows: • Always preheat the device. • The delta temperature between the preheat and TJ(max) – TA PD = soldering should be 100°C or less.*RθJA • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum The values for the equation are found in the maximum temperature ratings as shown on the data sheet. When ratings table on the data sheet. Substituting these values into using infrared heating with the reflow soldering method, the equation for an ambient temperature TA of 25°C, one can the difference shall be a maximum of 10°C. calculate the power dissipation of the device which in this • The soldering temperature and time shall not exceed case is 225 milliwatts. 260°C for more than 10 seconds. • When shifting from preheating to soldering, the P = 150°C – 25°CD = 225 milliwatts maximum temperature gradient shall be 5°C or less.556°C/W • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. The 556°C/W for the SOT–23 package assumes the use Gradual cooling should be used as the use of forced of the recommended footprint on a glass epoxy printed circuit cooling will increase the temperature gradient and result board to achieve a power dissipation of 225 milliwatts. There in latent failure due to mechanical stress. are other alternatives to achieving higher power dissipation • Mechanical stress or shock should not be applied during from the SOT–23 package. Another alternative would be to cooling. use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal * Soldering a device without preheating can cause excessive Clad, an aluminum core board, the power dissipation can be thermal shock and stress which can result in damage to the doubled using the same footprint. device. Motorola Small–Signal Transistors, FETs and Diodes Device Data 3,

PACKAGE DIMENSIONS A NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI L Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD 3 FINISH THICKNESS. MINIMUM LEAD THICKNESS

B S IS THE MINIMUM THICKNESS OF BASE

1 2 MATERIAL. INCHES MILLIMETERS

V G DIM MIN MAX MIN MAX

A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100

C J 0.0034 0.0070 0.085 0.177K 0.0180 0.0236 0.45 0.60

L 0.0350 0.0401 0.89 1.02

HJS0.0830 0.0984 2.10 2.50DKV0.0177 0.0236 0.45 0.60

STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE

CASE 318–08 ISSUE AE SOT–23 (TO–236AB)

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 MFAX: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 ◊ BAS21LT1/D 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data]
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