Download: DISCRETE SEMICONDUCTORS DATA SHEET BAS216 High-speed switching diode Product specification 1996 Apr 03 Supersedes data of April 1995 File under Discrete Semiconductors, SC01

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D179 BAS216 High-speed switching diode Product specification 1996 Apr 03 Supersedes data of April 1995 File under Discrete Semiconductors, SC01 A6 FEATURES APPLICATIONS DESCRIPTION • Small ceramic SMD package • High-speed switching in e.g. The BAS216 is a high-speed • High switching speed: max. 4 ns surface mounted circuits. switching diode fabricated in planar technology, and encapsulated in the • Continuous reverse voltage: small rectangular ceramic SMD max. 75 V SOD110 package. • Repetitive peak reverse voltage: max. 85 V • Repetitive ...
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, halfpage M3D179

BAS216 High-speed switching diode

Product specification 1996 Apr 03 Supersedes data of April 1995 File under Discrete Semiconductors, SC01

A6

, FEATURES APPLICATIONS DESCRIPTION • Small ceramic SMD package • High-speed switching in e.g. The BAS216 is a high-speed • High switching speed: max. 4 ns surface mounted circuits. switching diode fabricated in planar technology, and encapsulated in the • Continuous reverse voltage: small rectangular ceramic SMD max. 75 V SOD110 package. • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: cathode mark max. 500 mA. handbook, 4 columnsakkabottom view side view top view MAM139 Marking code: A6. Fig.1 Simplified outline (SOD110) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 85 V VR continuous reverse voltage − 75 V IF continuous forward current note 1 − 250 mA IFRM repetitive peak forward current − 500 mA IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs − 4At= 1 ms − 1At= 1 s − 0.5 A Ptot total power dissipation Tamb = 25 °C; see Fig.2; note 1 − 400 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Note 1. Device mounted on an FR4 printed-circuit board. 1996 Apr 03 2, ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage see Fig.3 IF = 1 mA − 715 mV IF = 10 mA − 855 mV IF = 50 mA − 1 V IF = 150 mA − 1.25 V IR reverse current see Fig.5 VR = 25 V − 30 nA VR = 75 V − 1 µA VR = 25 V; Tj = 150 °C − 30 µA VR = 75 V; Tj = 150 °C − 50 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 − 1.5 pF trr reverse recovery time when switched from IF = 10 mA to − 4 ns IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 Vfr forward recovery voltage when switched from IF = 10 mA; − 1.75 V tr = 20 ns; see Fig.8 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 200 K/W Rth j-a thermal resistance from junction to ambient note 1 315 K/W Note 1. Device mounted on an FR4 printed-circuit board. 1996 Apr 03 3, GRAPHICAL DATA MSA570 MBG382 500 300handbook, halfpage

IF

P (mA)tot (mW) (1) (2) (3) 000100012Tamb( o C) 200 VF (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. Device mounted on an FR4 printed-circuit board. (3) Tj = 25 °C; maximum values. Fig.2 Maximum permissible total power dissipation Fig.3 Forward current as a function of as a function of ambient temperature. forward voltage. MBG704 handbook, full pagewidth

IFSM

(A) 10−1 1 10 102 103 t (µs) 10 p Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Apr 03 4, MSA563 MBH285 105 0.6handbook, halfpageIRCd (nA) (pF) V R = 75 V 104 0.5 75 V 103 0.4 25 V 102 0.2 1000100 T ( o C) 20004812 V (V) 16j R Dotted line: maximum values. Solid line: typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Reverse current as a function of Fig.6 Diode capacitance as a function of reverse junction temperature. voltage; typical values. 1996 Apr 03 5, handbook, full pagewidthtrtptD.U.T. 10% RS = 50 Ω IF IF t rr SAMPLING t

OSCILLOSCOPE

V = VRIFxRSRi= 50 Ω 90% (1)

VR

MGA881 input signal output signal (1) IR = 1 mA.

Fig.7 Reverse recovery voltage test circuit and waveforms.

I1kΩ450ΩIV90% R S = 50 Ω OSCILLOSCOPE V D.U.T. frRi= 50 Ω 10% MGA882tttrtpinput output signal signal

Fig.8 Forward recovery voltage test circuit and waveforms.

1996 Apr 03 6, MOUNTING Wave soldering Reflow soldering Before wave soldering, attach SOD110 packages to the printed-circuit boards using a small dot of thermo-setting Follow standard reflow soldering techniques to ensure epoxy or UV-curing adhesive centred between the correct application of solder paste and placement of the soldering lands (see Fig.10). SOD110 package (see Fig.9). 3.00 handbook, halfpage 3.40 handbook, halfpage 1.25 1.25 1.00 1.00 MGC119 1.10 1.10 MGC126 Dimensions in mm. Dimensions in mm. Fig.9 SOD110 reflow soldering pattern. Fig.10 SOD110 wave soldering pattern. 1996 Apr 03 7, PACKAGE OUTLINE cathode mark 2.10 1.90 1.6 max MSA323 - 1 1.40 1.10 0.1 Dimensions in mm. Fig.11 SOD110.

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Apr 03 8,

NOTES

1996 Apr 03 9,

NOTES

1996 Apr 03 10,

NOTES

1996 Apr 03 11,

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