Download: DISCRETE SEMICONDUCTORS DATA SHEET BAS16W High-speed diode Product specification 1996 Apr 03 Supersedes data of December 1993 File under Discrete Semiconductors, SC01

DISCRETE SEMICONDUCTORS DATA SHEET M3D102 BAS16W High-speed diode Product specification 1996 Apr 03 Supersedes data of December 1993 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION PINNING • Very small plastic SMD package The BAS16W is a high-speed PIN DESCRIPTION • High switching speed: max. 4 ns switching diode fabricated in planar technology, and encapsulated in the 1 anode • Continuous reverse voltage: very small plastic SMD SOT323 2 not connected max. 75 V package. 3 cathode • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA21• Forwar...
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DISCRETE SEMICONDUCTORS

DATA SHEET

M3D102

BAS16W High-speed diode

Product specification 1996 Apr 03 Supersedes data of December 1993 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION PINNING • Very small plastic SMD package The BAS16W is a high-speed PIN DESCRIPTION • High switching speed: max. 4 ns switching diode fabricated in planar technology, and encapsulated in the 1 anode • Continuous reverse voltage: very small plastic SMD SOT323 2 not connected max. 75 V package. 3 cathode • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA21• Forward voltage: max. 1 V. 2 1 n.c.

APPLICATIONS

• High-speed switching in e.g. 3 surface mounted circuits. 3 MAM095 Top view Marking code: A6. Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 85 V VR continuous reverse voltage − 75 V IF continuous forward current see Fig.2; note 1 − 175 mA IFRM repetitive peak forward current − 500 mA IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs − 4At= 1 ms − 1At= 1 s − 0.5 A Ptot total power dissipation Tamb = 25 °C; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Note 1. Device mounted on an FR4 printed-circuit board. 1996 Apr 03 2, ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage see Fig.3 IF = 1 mA − 715 mV IF = 10 mA − 855 mV IF = 50 mA − 1 V IF = 150 mA − 1.25 V IR reverse current see Fig.5 VR = 25 V − 30 nA VR = 75 V − 1 µA VR = 25 V; Tj = 150 °C − 30 µA VR = 75 V; Tj = 150 °C; − 50 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 − 1.5 pF trr reverse recovery time when switched from IF = 10 mA to − 4 ns IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 Vfr forward recovery voltage when switched from IF = 10 mA; − 1.75 V tr = 20 ns; see Fig.8 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 300 K/W Rth j-a thermal resistance from junction to ambient note 1 625 K/W Note 1. Device mounted on an FR4 printed-circuit board. 1996 Apr 03 3, GRAPHICAL DATA MGA887 MBG382 200 300 handbook, halfpage

IF

IF (mA) (mA) (1) (2) (3) 000100 o 200Tamb( C) 01V2F (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. Device mounted on an FR4 printed-circuit board. (3) Tj = 25 °C; maximum values. Fig.2 Maximum permissible continuous forward Fig.3 Forward current as a function of current as a function of ambient temperature. forward voltage. MBG704 handbook, full pagewidth

IFSM

(A) 10−1 1 10 102 103 t (µs) 10 p Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Apr 03 4, MGA884 MBG446 105 0.8handbook, halfpage I CR d (nA) (pF) V R = 75 V4 10 0.6 3 max 75 V10 0.4 2 25 V 10 0.2 typ typ 1000100 o 20004812 16T j ( C) VR (V) f = 1 MHz; Tj = 25 °C. Fig.5 Reverse current as a function of Fig.6 Diode capacitance as a function of reverse junction temperature. voltage; typical values. 1996 Apr 03 5, handbook, full pagewidthtrtptD.U.T. 10% R = 50ΩIItSFFrrSAMPLING t

OSCILLOSCOPE

V = VRIFxRSRi= 50 Ω 90% (1)

VR

MGA881 input signal output signal (1) IR = 1 mA.

Fig.7 Reverse recovery voltage test circuit and waveforms.

I1kΩ450ΩIV90% R S = 50 Ω OSCILLOSCOPE V D.U.T. frRi= 50 Ω 10% MGA882tttrtpinput output signal signal

Fig.8 Forward recovery voltage test circuit and waveforms.

1996 Apr 03 6, PACKAGE OUTLINE 1.00 handbook, full pagewidth max 0.4 0.1 0.2MA0.2MB0.2 max 0.2

A

2.2 1.35 2.0 1.15120.3 0.1 1.4 0.25 1.2 0.10 2.2

B

1.8 MBC871 Dimensions in mm. Fig.9 SOT323.

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Apr 03 7]
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