Download: Order this document SEMICONDUCTOR TECHNICAL DATA by BC635/D NPN Silicon

Order this document SEMICONDUCTOR TECHNICAL DATA by BC635/D NPN Silicon COLLECTOR BASE EMITTER MAXIMUM RATINGS 2 BC BC BC Rating Symbol 635 637 639 Unit CASE 29–04, STYLE 14 Collector–Emitter Voltage VCEO 45 60 80 Vdc TO–92 (TO–226AA) Collector–Base Voltage VCBO 45 60 80 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 0.5 Adc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS ...
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Order this document SEMICONDUCTOR TECHNICAL DATA by BC635/D NPN Silicon COLLECTOR BASE EMITTER

MAXIMUM RATINGS 2 BC BC BC Rating Symbol 635 637 639 Unit CASE 29–04, STYLE 14 Collector–Emitter Voltage VCEO 45 60 80 Vdc TO–92 (TO–226AA) Collector–Base Voltage VCBO 45 60 80 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 0.5 Adc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 °C/W Thermal Resistance, Junction to Case RJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) V(BR)CEO Vdc (IC = 10 mAdc, IB = 0) BC635 45 — — Collector–Base Breakdown Voltage V(BR)CBO Vdc (IC = 100 µAdc, IE = 0) BC635 45 — — Emitter–Base Breakdown Voltage V(BR)EBO 5.0 — — Vdc (IE = 10 Adc, IC = 0) Collector Cutoff Current ICBO (VCB = 30 Vdc, IE = 0) — — 100 nAdc (VCB = 30 Vdc, IE = 0, TA = 125°C) — — 10 µAdc 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%. Motorola Small–Signal Transistors, FETs and Diodes Device Data 1 Motorola, Inc. 1996, ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(1) DC Current Gain hFE — (IC = 5.0 mAdc, VCE = 2.0 Vdc) 25 — — (IC = 150 mAdc, VCE = 2.0 Vdc) BC635 40 — 250 BC637 40 — 160 BC639 40 — 160 (IC = 500 mA, VCE = 2.0 V) 25 — — Collector–Emitter Saturation Voltage VCE(sat) — — 0.5 Vdc (IC = 500 mAdc, IB = 50 mAdc) Base–Emitter On Voltage VBE(on) — — 1.0 Vdc (IC = 500 mAdc, VCE = 2.0 Vdc) DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product fT — 200 — MHz (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) Output Capacitance Cob — 7.0 — pF (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance Cib — 50 — pF (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data, 1000 500 500 V = 2 VSOA = 1S CE 200 PD TA 25°C 200 50 PD TC 25°C 100 PD TA 25°C BC635 2 PD T 25°C BC637 C BC639 1 2012345710 20 30 40 50 70 10013510 30 50 100 300 500 1000 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 1. Active Region Safe Operating Area Figure 2. DC Current Gain

500 1 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 2 V VCE = 2 V 0.4 0.2 VCE(sat) @ IC/IB = 10 200110 100 1000 1 10 100 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 3. Current–Gain — Bandwidth Product Figure 4. “Saturation” and “On” Voltages

–0.2 –1.0 VCE = 2 VOLTS ∆T = 0°C to +100°C –1.6 θV for VBE –2.213510 30 50 100 300 500 1000 IC, COLLECTOR CURRENT (mA)

Figure 5. Temperature Coefficients Motorola Small–Signal Transistors, FETs and Diodes Device Data 3

fT, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) IC, COLLECTOR CURRENT (mA) θV, TEMPERATURE COEFFICIENTS (mV/°C) V, VOLTAGE (VOLTS) hFE, DC CURRENT GAIN,

PACKAGE DIMENSIONS

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI

A B Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

R 4. DIMENSION F APPLIES BETWEEN P AND L.

DIMENSION D AND J APPLY BETWEEN L AND K

P MINIMUM. LEAD DIMENSION IS UNCONTROLLED

IN P AND BEYOND DIMENSION K MINIMUM.

L

SEATING F PLANE K INCHES MILLIMETERS DIM MIN MAX MIN MAX

D A 0.175 0.205 4.45 5.20B 0.170 0.210 4.32 5.33

C 0.125 0.165 3.18 4.19

XXJD0.016 0.022 0.41 0.55 G F 0.016 0.019 0.41 0.48G 0.045 0.055 1.15 1.39 H H 0.095 0.105 2.42 2.66 SECTION X–X J 0.015 0.020 0.39 0.50VCK0.500 ––– 12.70 –––

L 0.250 ––– 6.35 ––– N 0.080 0.105 2.04 2.661NP––– 0.100 ––– 2.54 R 0.115 ––– 2.93 –––

N V 0.135 ––– 3.43 –––

STYLE 14:

CASE 029–04 PIN 1. EMITTER

2. COLLECTOR (TO–226AA) 3. BASE

ISSUE AD

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: email is hidden – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 4 ◊ Motorola Small–Signal Transistors, FETs and Diodes DeviBceC 6D3a5t/Da]
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