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BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCER Collector-Emitter Voltage at RBE=1KΩ : BC635 45 V VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage : BC639 80 V VEBO Emitter-Base Voltage5VIC Collector Current1AICP Peak Collector Current 1.5 A IB Base Current 100 mA PC Collector Dissipation1WTJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C • PW=5ms, Duty Cycle=10% Electr...
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BC635/637/639 Switching and Amplifier Applications

• Complement to BC636/638/640 1 TO-92 1. Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol Parameter Value Units VCER Collector-Emitter Voltage at RBE=1KΩ : BC635 45 V VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage : BC639 80 V VEBO Emitter-Base Voltage5VIC Collector Current1AICP Peak Collector Current 1.5 A IB Base Current 100 mA PC Collector Dissipation1WTJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C • PW=5ms, Duty Cycle=10%

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 : BC635 45 V : BC736 60 V : BC639 80 V ICBO Collector Cut-off Current VCB=30V, IE=0 0.1 µA IEBO Emitter Cut-off Current VEB=5V, IC=0 0.1 µA hFE1 DC Current Gain : All VCE=2V, IC=5mA 25 hFE2 : BC635 VCE=2V, IC=150mA 40 250 : BC637/BC639 40 160 hFE3 : All VCE=2V, IC=500mA 25 VCE(sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA 0.5 V VBE(on) Base-Emitter On Voltage VCE=2V, IC=500mA1VfT Current Gain Bandwidth Product VCE=5V, IC=10mA, 100 MHz f=50MHz,

Typical Characteristics

200 1000 IB = 1.8 mA IB = 1.6 mA VCE = 2V IB = 1.4 mA IB = 1.2 mA IB = 1.0 mA 100 80 IB = 0.8 mA IB = 0.6 mA 40 IB = 0.4 mA IB = 0.2 mA 0 10 0 10 20 30 40 50 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

10 1000 IC = 10 IB VCE = 2V 1 VBE(sat) 100 0.1 10 VCE(sat) 0.011110 100 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage Collector-Emitter Saturation Voltage

f=1MHz 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE

Figure 5. Collector Output Capacitance

Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT hFE, DC CURRENT GAIN,

Package Demensions TO-92

+0.25 4.58 –0.15 0.46 ±0.10 1.27TYP 1.27TYP +0.100.38 –0.05 [1.27 ±0.20] [1.27 ±0.20] 3.60 ±0.20 (R2.29) Dimensions in Millimeters 3.86MAX 1.02 ±0.10 +0.10 0.38 –0.05 (0.25) 14.47 ±0.40 4.58 ±0.20,

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ HiSeC™ SuperSOT™-8 Bottomless™ ISOPLANAR™ SyncFET™ CoolFET™ MICROWIRE™ TinyLogic™ CROSSVOLT™ POP™ UHC™ E2CMOS™ PowerTrench® VCX™ FACT™ QFET™ FACT Quiet Series™ QS™ FAST® Quiet Series™ FASTr™ SuperSOT™-3 GTO™ SuperSOT™-6 DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition Advance Information Formative or In This datasheet contains the design specifications for Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E]
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