Download: Typical Characteristics

BC556/557/558/559/560 Switching and Amplifier

• High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 ... BC 550 1 TO-92 1. Collector 2. Base 3. Emitter

PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol Parameter Value Units VCBO Collector-Base Capacitance : BC556 -80 V : BC557/560 -50 V VCEO Collector-Emitter Voltage : BC556 -65 V : BC557/560 -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB= -30V, IE=0 -15 nA hFE DC Current Gain VCE= -5V, IC=2mA 110 800 VCE Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA -90 -300 mV (sat) IC= -100mA, IB= -5mA -250 -650 mV VBE (sat) Collector-Base Saturation Voltage IC= -10mA, IB= -0.5mA -700 mV IC= -100mA, IB= -5mA -900 mV VBE (on) Base-Emitter On Voltage VCE= -5V, IC= -2mA -600 -660 -750 mV VCE= -5V, IC= -10mA -800 mV fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA, f=10MHz 150 MHz Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 6 pF NF Noise Figure : BC556/557/558 VCE= -5V, IC= -200µA 2 10 dB : BC559/560 f=1KHz, RG=2KΩ14dB : BC559 VCE= -5V, IC= -200µA 1.2 4 dB : BC560 RG=2KΩ, f=30~15000MHz 1.2 2 dB hFE Classification ClassificationABChFE 110 ~ 220 200 ~ 450 420 ~ 800,

Typical Characteristics

-50 1000 -45 IB = -400 μA VCE = -5V -40 IB = -350 μA -35 IB = -300 μA IB = -250 μA-30 -25 IB = -200 μA -20 IB = -150 μA -15 IB = -100 μA -10 IB = -50 μA -5 -0 1 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -0.1 -1 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

-10 -100 IC = -10 IB VCE = -5V -1 VBE(sat) -10 -0.1 -1 VCE(sat) -0.01 -0.1 -0.1 -1 -10 -100 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage Collector-Emitter Saturation Voltage

VCE = -5V f=1MHz 10 IE = 0 1 10 -1 -10 -100 -1 -10 VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product

C (pF), CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE IC[mA], COLLECTOR CURRENTob I [mA], COLLECTOR CURRENT fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT C hFE, DC CURRENT GAIN,

Package Demensions TO-92

+0.25 4.58 –0.15 0.46 ±0.10 1.27TYP 1.27TYP +0.100.38 –0.05 [1.27 ±0.20] [1.27 ±0.20] 3.60 ±0.20 (R2.29) Dimensions in Millimeters 3.86MAX 1.02 ±0.10 +0.10 0.38 –0.05 (0.25) 14.47 ±0.40 4.58 ±0.20,

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition Advance Information Formative or In This datasheet contains the design specifications for Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E]

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