Download: Order this document SEMICONDUCTOR TECHNICAL DATA by BC556/D PNP Silicon

Order this document SEMICONDUCTOR TECHNICAL DATA by BC556/D PNP Silicon COLLECTOR BASE EMITTER MAXIMUM RATINGS BC BC BC23Rating Symbol 556 557 558 Unit Collector–Emitter Voltage VCEO –65 –45 –30 Vdc CASE 29–04, STYLE 17 TO–92 (TO–226AA) Collector–Base Voltage VCBO –80 –50 –30 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –100 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTE...
Author: Begum Shared: 8/19/19
Downloads: 181 Views: 774

Content

Order this document SEMICONDUCTOR TECHNICAL DATA by BC556/D PNP Silicon COLLECTOR BASE EMITTER

MAXIMUM RATINGS BC BC BC23Rating Symbol 556 557 558 Unit Collector–Emitter Voltage VCEO –65 –45 –30 Vdc CASE 29–04, STYLE 17 TO–92 (TO–226AA) Collector–Base Voltage VCBO –80 –50 –30 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –100 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 °C/W Thermal Resistance, Junction to Case RJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO V (IC = –2.0 mAdc, IB = 0) BC556 –65 — — BC557 –45 — — BC558 –30 — — Collector–Base Breakdown Voltage V(BR)CBO V (IC = –100 µAdc) BC556 –80 — — BC557 –50 — — BC558 –30 — — Emitter–Base Breakdown Voltage V(BR)EBO V (IE = –100 Adc, IC = 0) BC556 –5.0 — — BC557 –5.0 — — BC558 –5.0 — — Collector–Emitter Leakage Current ICES (VCES = –40 V) BC556 — –2.0 –100 nA (VCES = –20 V) BC557 — –2.0 –100 BC558 — –2.0 –100 (VCES = –20 V, TA = 125°C) BC556 — — –4.0 µA BC557 — — –4.0 BC558 — — –4.0 Motorola Small–Signal Transistors, FETs and Diodes Device Data 1 Motorola, Inc. 1996, ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain hFE — (IC = –10 µAdc, VCE = –5.0 V) BC557A — 90 — BC556B/557B/558B — 150 — BC557C — 270 — (IC = –2.0 mAdc, VCE = –5.0 V) BC556 120 — 500 BC557 120 — 800 BC558 120 — 800 BC557A 120 170 220 BC556B/557B/558B 180 290 460 BC557C 420 500 800 (IC = –100 mAdc, VCE = –5.0 V) BC557A — 120 — BC556B/557B/558B — 180 — BC557C — 300 — Collector–Emitter Saturation Voltage VCE(sat) V (IC = –10 mAdc, IB = –0.5 mAdc) — –0.075 –0.3 (IC = –10 mAdc, IB = see Note 1) — –0.3 –0.6 (IC = –100 mAdc, IB = –5.0 mAdc) — –0.25 –0.65 Base–Emitter Saturation Voltage VBE(sat) V (IC = –10 mAdc, IB = –0.5 mAdc) — –0.7 — (IC = –100 mAdc, IB = –5.0 mAdc) — –1.0 — Base–Emitter On Voltage VBE(on) V (IC = –2.0 mAdc, VCE = –5.0 Vdc) –0.55 –0.62 –0.7 (IC = –10 mAdc, VCE = –5.0 Vdc) — –0.7 –0.82 SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product fT MHz (IC = –10 mA, VCE = –5.0 V, f = 100 MHz) BC556 — 280 — BC557 — 320 — BC558 — 360 — Output Capacitance Cob — 3.0 6.0 pF (VCB = –10 V, IC = 0, f = 1.0 MHz) Noise Figure NF dB (IC = –0.2 mAdc, VCE = –5.0 V, BC556 — 2.0 10 RS = 2.0 k, f = 1.0 kHz, ∆f = 200 Hz) BC557 — 2.0 10 BC558 — 2.0 10 Small–Signal Current Gain hfe — (IC = –2.0 mAdc, VCE = –5.0 V, f = 1.0 kHz) BC556 125 — 500 BC557/558 125 — 900 BC557A 125 220 260 BC556B/557B/558B 240 330 500 BC557C 450 600 900 Note 1: IC = –10 mAdc on the constant base current characteristics, which yields the point IC = –11 mAdc, VCE = –1.0 V. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data,

BC557/BC558

2.0 –1.0 1.5 VCE = –10 V –0.9 TA = 25°C TA = 25°C –0.8 VBE(sat) @ IC/IB = 10 1.0 –0.7 –0.6 VBE(on) @ VCE = –10 V 0.7 –0.5 0.5 –0.4 –0.3 0.3 –0.2 –0.1 VCE(sat) @ IC/IB = 10 0.2 0 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages

–2.0 1.0 TA = 25°C –55°C to +125°C 1.2 –1.6 1.6 –1.2 2.0 IC = IC = –50 mA IC = –200 mA–0.8 –10 mA 2.4 IC = –100 mA –0.4 IC = –20 mA 2.8 –0.02 –0.1 –1.0 –10 –20 –0.2 –1.0 –10 –100 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 3. Collector Saturation Region Figure 4. Base–Emitter Temperature Coefficient

10 400 Cib 300 7.0 TA = 25°C 200 5.0 150 VCE = –10 V TA = 25°C 3.0 Cob 2.0 1.0 20 –0.4 –0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)

Figure 5. Capacitances Figure 6. Current–Gain – Bandwidth Product Motorola Small–Signal Transistors, FETs and Diodes Device Data 3

C, CAPACITANCE (pF) VCE, COLLECTOR–EMITTER VOLTAGE (V) hFE, NORMALIZED DC CURRENT GAIN fT, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) θVB, TEMPERATURE COEFFICIENT (mV/ °C) V, VOLTAGE (VOLTS),

BC556

–1.0 TJ = 25°CVCE = –5.0VT= 25°C –0.8A VBE(sat) @ IC/IB = 10 2.0 –0.6 VBE @ VCE = –5.0 V 1.0 –0.4 0.5 –0.2 0.2 VCE(sat) @ IC/IB = 10 –0.1 –0.2 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (mA)

Figure 7. DC Current Gain Figure 8. “On” Voltage

–2.0 –1.0 –1.6 –1.4 IC = –20 mA –50 mA –100 mA –200 mA –1.2 –10 mA –1.8 θVB for VBE –55°C to 125°C –0.8 –2.2 –0.4 –2.6 TJ = 25°C 0 –3.0 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 9. Collector Saturation Region Figure 10. Base–Emitter Temperature Coefficient

VCE = –5.0VT= 25°C 500J 20 Cib 10 100 8.0 6.0 50 Cob 4.0 2.0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –1.0 –10 –100 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 11. Capacitance Figure 12. Current–Gain – Bandwidth Product

4 Motorola Small–Signal Transistors, FETs and Diodes Device Data C, CAPACITANCE (pF) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) hFE, DC CURRENT GAIN (NORMALIZED) fT, CURRENT–GAIN – BANDWIDTH PRODUCT θVB, TEMPERATURE COEFFICIENT (mV/ °C) V, VOLTAGE (VOLTS), 1.0 0.7 D = 0.5 0.5 0.2 0.3 0.2 0.05 SINGLE PULSE 0.1 ZθJC(t) = (t) RθJC 0.1 P(pk) RθJC = 83.3°C/W MAX 0.07 SINGLE PULSE ZθJA(t) = r(t) RθJA 0.05 t1 RθJA = 200°C/W MAX D CURVES APPLY FOR POWER 0.03 t2 PULSE TRAIN SHOWN 0.02 DUTY CYCLE, D = t1/t2 READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k t, TIME (ms)

Figure 13. Thermal Response

–2001s3ms –100 The safe operating area curves indicate IC–VCE limits of the T = 25°C TJ = 25°C transistor that must be observed for reliable operation. Collector load–50 A lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is BC558 variable depending upon conditions. Pulse curves are valid for duty BC557 –10 cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from BC556 the data in Figure 13. At high case or ambient temperatures, thermal –5.0 limitations will reduce the power than can be handled to values lessBONDING WIRE LIMIT than the limitations imposed by second breakdown. THERMAL LIMIT SECOND BREAKDOWN LIMIT –2.0 –1.0 –5.0 –10 –30 –45 –65 –100 VCE, COLLECTOR–EMITTER VOLTAGE (V)

Figure 14. Active Region — Safe Operating Area Motorola Small–Signal Transistors, FETs and Diodes Device Data 5

IC, COLLECTOR CURRENT (mA) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED),

PACKAGE DIMENSIONS

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI

A B Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

R 4. DIMENSION F APPLIES BETWEEN P AND L.

DIMENSION D AND J APPLY BETWEEN L AND K

P MINIMUM. LEAD DIMENSION IS UNCONTROLLED

IN P AND BEYOND DIMENSION K MINIMUM.

L

SEATING F PLANE K INCHES MILLIMETERS DIM MIN MAX MIN MAX

D A 0.175 0.205 4.45 5.20B 0.170 0.210 4.32 5.33

C 0.125 0.165 3.18 4.19

XXJD0.016 0.022 0.41 0.55 G F 0.016 0.019 0.41 0.48G 0.045 0.055 1.15 1.39 H H 0.095 0.105 2.42 2.66 SECTION X–X J 0.015 0.020 0.39 0.50VCK0.500 ––– 12.70 –––

L 0.250 ––– 6.35 ––– N 0.080 0.105 2.04 2.661NP––– 0.100 ––– 2.54 R 0.115 ––– 2.93 –––

N V 0.135 ––– 3.43 –––

STYLE 17:

CASE 029–04 PIN 1. COLLECTOR

(TO–226AA) 2. BASE3. EMITTER

ISSUE AD

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: email is hidden – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola Small–Signal Transistors, FETs and Diodes DeviBceC 5D5a6t/Da]
15

Similar documents

DISCRETE SEMICONDUCTORS DATA SHEET BC556; BC557 PNP general purpose transistors Product specification 1999 Apr 15 Supersedes data of 1997 Mar 27
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC556; BC557 PNP general purpose transistors Product specification 1999 Apr 15 Supersedes data of 1997 Mar 27 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 65 V). 1 emitter 2 base APPLICATIONS 3 collector • G
Typical Characteristics
BC546/547/548/549/550 Switching and Amplifier • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 ... BC560 1 TO-92 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO C
DISCRETE SEMICONDUCTORS DATA SHEET BC546; BC547 NPN general purpose transistors Product specification 1999 Apr 15 Supersedes data of 1997 Mar 04
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC546; BC547 NPN general purpose transistors Product specification 1999 Apr 15 Supersedes data of 1997 Mar 04 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 65 V). 1 emitter 2 base APPLICATIONS 3 collector • G
ON Semiconductor BC372 High Voltage BC373 Darlington Transistors NPN Silicon MAXIMUM RATINGS
ON Semiconductor BC372 High Voltage BC373 Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector–Emitter Voltage VCES 100 80 Vdc 1 Collector–Base Voltage VCBO 100 80 Vdc 3 Emitter–Base Voltage VEBO 12 Vdc CASE 29–11, STYLE 1 Collector Current — Continuous IC 1.0
PNP General Purpose Amplifier
BC369 B TO-92CEPNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 77. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter
NPN General Purpose Amplifier
BC368 B TO-92CENPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A. Sourced from Process 37. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter
DISCRETE SEMICONDUCTORS DATA SHEET BC337 NPN general purpose transistor Product specification 1999 Apr 15 Supersedes data of 1997 Mar 10
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC337 NPN general purpose transistor Product specification 1999 Apr 15 Supersedes data of 1997 Mar 10 FEATURES PINNING • High current (max. 500 mA) PIN DESCRIPTION • Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS 3 collector • General
Typical Characteristics
BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 1 TO-92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCES Co
DISCRETE SEMICONDUCTORS DATA SHEET BC327 PNP general purpose transistor Product specification 1999 Apr 15 Supersedes data of 1997 Mar 10
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC327 PNP general purpose transistor Product specification 1999 Apr 15 Supersedes data of 1997 Mar 10 FEATURES PINNING • High current (max. 500 mA) PIN DESCRIPTION • Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS 3 collector • General
Order this document SEMICONDUCTOR TECHNICAL DATA by BC161–16/D PNP Silicon
Order this document SEMICONDUCTOR TECHNICAL DATA by BC161–16/D PNP Silicon COLLECTOR BASE EMITTER MAXIMUM RATINGS Rating Symbol Value Unit21Collector–Emitter Voltage VCEO –60 Vdc CASE 79–04, STYLE 1 TO–39 (TO–205AD) Collector–Base Voltage VCBO –60 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Cur
DATA SHEET BBY62 UHF variable capacitance double diode
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D070 BBY62 UHF variable capacitance double diode Product specification 1996 May 03 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES • Excellent linearity • Small plastic SMD package • C28:1.9 pF; ratio: 8.3. ha
DATA SHEET BBY42 VHF variable capacitance diode
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BBY42 VHF variable capacitance diode Product specification 1996 May 03 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES • Excellent linearity • Small plastic SMD package • C28: 2.7 pF; ratio: 14. handbook,
DATA SHEET BBY40 VHF variable capacitance diode
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BBY40 VHF variable capacitance diode Product specification 1996 May 03 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES • Excellent linearity • Small plastic SMD package • C25: 4.6 pF; ratio: 5.5. handbook
DATA SHEET BBY39 UHF variable capacitance double diode
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BBY39 UHF variable capacitance double diode Product specification 1996 May 03 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES • Excellent linearity • Small plastic SMD package • C28: 1.9 pF; ratio: 8.3. h
DATA SHEET BBY31 UHF variable capacitance diode
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BBY31 UHF variable capacitance diode Product specification 1996 May 03 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES • Excellent linearity • Small plastic SMD package • C28: 1.9 pF; ratio: 8.3. handbook
DATA SHEET BB911/A VHF variable capacitance diode
DISCRETE SEMICONDUCTORS DATA SHEET M3D051 BB911/A VHF variable capacitance diode Product specification 1996 May 03 Supersedes data of December 1993 File under Discrete Semiconductors, SC01 FEATURES • High linearity handbook, halfpage • kMatched to 2.5% a • Hermetically sealed leaded glass SOD68 (DO-
DATA SHEET BB910 VHF variable capacitance diode
DISCRETE SEMICONDUCTORS DATA SHEET M3D051 BB910 VHF variable capacitance diode Product specification 1996 May 03 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES • Excellent linearity • Matched to 2.5% handbook, halfpagke a • Hermetically sealed leaded glass SOD68 (DO-
DATA SHEET BB909A; BB909B VHF variable capacitance diodes
DISCRETE SEMICONDUCTORS DATA SHEET M3D051 BB909A; BB909B VHF variable capacitance diodes Product specification 1996 May 03 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES • Excellent linearity • Matched to 2.5% handbook, halfpagke a • Hermetically sealed leaded glass
DATA SHEET BB901 VHF variable capacitance diode
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BB901 VHF variable capacitance diode Product specification 1996 May 03 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES • Excellent linearity • Small plastic SMD package • C28: 1 pF; ratio: 13.5 handbook,
DATA SHEET BB809 VHF variable capacitance diode
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D050 BB809 VHF variable capacitance diode Product specification 1996 May 03 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES • High linearity • Matched to 3% • Hermetically sealed leaded glass handbook, halfpagke
DATA SHEET BB804 VHF variable capacitance double diode
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BB804 VHF variable capacitance double diode Product specification 1996 May 03 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES MARKING PINNING • Selected capacitance ranges TYPE NUMBER CODE PIN DESCRIPTION
DATA SHEET BB417 UHF variable capacitance diode
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D050 BB417 UHF variable capacitance diode Product specification 1996 May 03 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES • Excellent linearity handbook, halfpagke a • Hermetically sealed leaded glass SOD68 (DO
DATA SHEET BB405B UHF variable capacitance diode
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D050 BB405B UHF variable capacitance diode Product specification 1996 May 03 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES • Excellent linearity • Matched to 3% k • handbook, halfpage aHermetically sealed leade
DATA SHEET BB215 UHF variable capacitance diode
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D155 BB215 UHF variable capacitance diode Product specification 1996 May 03 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES • Excellent linearity handbook, 4 columnska• Matched to 3% • Small hermetically seale
DATA SHEET BB212 AM variable capacitance double diode
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D152 BB212 AM variable capacitance double diode Product specification 1996 May 03 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES PINNING • Leaded plastic package PIN DESCRIPTION • C8: 19 pF; ratio: 29. 1 anode (
DATA SHEET BB204B; BB204G VHF variable capacitance double diodes
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D152 BB204B; BB204G VHF variable capacitance double diodes Product specification 1996 May 03 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES PINNING • Selected capacitance ranges PIN DESCRIPTION • Leaded plastic
DATA SHEET BB159 UHF variable capacitance diode
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D049 BB159 UHF variable capacitance diode Product specification 1996 May 03 Supersedes data of December 1994 File under Discrete Semiconductors, SC01 FEATURES • Excellent linearity • Very small plastic SMD package handbook, 4 columnska• C28: 2.
DATA SHEET BB158 VHF variable capacitance diode
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D049 BB158 VHF variable capacitance diode Product specification 1996 May 03 Supersedes data of December 1994 File under Discrete Semiconductors, SC01 FEATURES • Excellent linearity • Very small plastic SMD package handbook, 4 columnska• C28: 2.
DATA SHEET BB150 VHF variable capacitance diode
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D049 BB150 VHF variable capacitance diode Product specification 1996 May 03 Supersedes data of December 1994 File under Discrete Semiconductors, SC01 FEATURES • Excellent linearity handbook, 4 columns • k aVery small plastic SMD package • C28:
DATA SHEET BB149 UHF variable capacitance diode
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D049 BB149 UHF variable capacitance diode Product specification 1996 May 03 Supersedes data of December 1994 File under Discrete Semiconductors, SC01 FEATURES • Excellent linearity • Excellent matching to 1% DMA • Very small plastic SMD package