Download: ON Semiconductor BC372 High Voltage BC373 Darlington Transistors NPN Silicon MAXIMUM RATINGS

ON Semiconductor BC372 High Voltage BC373 Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector–Emitter Voltage VCES 100 80 Vdc 1 Collector–Base Voltage VCBO 100 80 Vdc 3 Emitter–Base Voltage VEBO 12 Vdc CASE 29–11, STYLE 1 Collector Current — Continuous IC 1.0 Adc TO–92 (TO–226AA) Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range COLLECTOR 3 THERMAL CHARACTERISTICS BASE Characteristic...
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ON Semiconductor BC372 High Voltage BC373 Darlington Transistors NPN Silicon

MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector–Emitter Voltage VCES 100 80 Vdc 1 Collector–Base Voltage VCBO 100 80 Vdc 3 Emitter–Base Voltage VEBO 12 Vdc CASE 29–11, STYLE 1 Collector Current — Continuous IC 1.0 Adc TO–92 (TO–226AA) Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range COLLECTOR 3 THERMAL CHARACTERISTICS BASE Characteristic Symbol Max Unit 2 Thermal Resistance, Junction to Ambient RJA 200 °C/W Thermal Resistance, Junction to Case RJC 83.3 °C/W EMITTER 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) V(BR)CES Vdc (IC = 100 Adc, IB = 0) BC372 100 — — Collector–Base Breakdown Voltage V(BR)CBO Vdc (IC = 100 Adc, IE = 0) BC372 100 — — Emitter–Base Breakdown Voltage V(BR)EBO 12 — — Vdc (IE = 10 Adc, IC = 0) Collector Cutoff Current ICBO nAdc (VCB = 80 Vdc, IE = 0) BC372 — — 100 (VCB = 60 Vdc, IE = 0) BC373 — — 100 Emitter Cutoff Current IEBO — — 100 nAdc (VEB = 10 V, IC = 0) 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: May, 2001 – Rev. 2 BC272/D, ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(1) DC Current Gain hFE K (IC = 250 mAdc, VCE = 5.0 Vdc) 8.0 — — (IC = 100 mAdc, VCE = 5.0 Vdc) 10 — 160 Collector–Emitter Saturation Voltage VCE(sat) — 1.0 1.1 Vdc (IC = 250 mAdc, IB = 0.25 mAdc) Base–Emitter Saturation Voltage VBE(sat) — 1.4 2.0 Vdc (IC = 250 mAdc, IB = 0.25 mAdc) DYNAMIC CHARACTERISTICS Current–Gain Bandwidth Product fT 100 200 — MHz (IC = 100 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance Cob — 10 25 pF (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure NF — 2.0 — dB (IC = 1.0 mAdc, VCE = 5.0 Vdc, Rg = 100 k ohm, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. Figure 1. 100 K 1.6 VCE = 5 V VBE(sat) @ IC/IB = 100 1.4 TA = 125°C 1.2 VBE(on) @ VCE = 5 V 25°C 10 K -55°C 0.8 V @ I 0.6 CE(sat) C /IB = 100 0.4 0.21K0110 100 1000 5 10 100 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain Figure 2. “Saturation” and “On” Voltages 1000 100 VCE = 5 V TJ = 25°C Cib Cob 100 10 10 1 0.6 1 10 100 600 0.1 10 100 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Current–Gain — Bandwidth Product Figure 4. Capacitances fT, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) hFE, DC CURRENT GAIN C, CAPACITANCE (pF) VOLTAGE (V),

PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL

NOTES:

A B 1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R

R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

P BEYOND DIMENSION K MINIMUM. L

SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533

XXDG0.045 0.055 1.15 1.39 G H 0.095 0.105 2.42 2.66 J J 0.015 0.020 0.39 0.50H K 0.500 - 12.70 - V L 0.250 - 6.35 -C N 0.080 0.105 2.04 2.66 SECTION X–X P - 0.100 - 2.54

1NR0.115 - 2.93 - V 0.135 - 3.43 -

N STYLE 1:

PIN 1. EMITTER 2. BASE 3. COLLECTOR, ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

Literature Fulfillment: JAPAN: ON Semiconductor, Japan Customer Focus Center Literature Distribution Center for ON Semiconductor 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 P.O. Box 5163, Denver, Colorado 80217 USA Phone: 81–3–5740–2700 Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Email: email is hidden Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: email is hidden ON Semiconductor Website: http://onsemi.com For additional information, please contact your local N. American Technical Support: 800–282–9855 Toll Free USA/Canada Sales Representative. http://onsemi.com BC372/D]
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