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BC369 B TO-92CEPNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 77. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 20 V VCES Collector-Base Voltage 25 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.5 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaire...
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BC369
B TO-92CEPNP General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 77.Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 20 V VCES Collector-Base Voltage 25 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.5 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors.Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units
BC369 PD Total Device Dissipation 625 mW Derate above 25°C 5.0 mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 °C/W 1997 Fairchild Semiconductor CorporationBC369
,PNP General Purpose Amplifier
(continued)Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 20 V V(BR)CES Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 25 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V ICBO Collector-Cutoff Current VCB = 25 V, IE = 0 10 µA VCB = 25 V, IE = 0, TA = 150°C 1.0 mA IEBO Emitter-Cutoff Current VEB = 5.0 V, IC = 0 10 µAON CHARACTERISTICS
hFE DC Current Gain IC = 5.0 mA, VCE = 10 V 50 IC = 0.5 A, VCE = 1.0 V 85 375 IC = 1.0 A, VCE = 1.0 V 60 VCE(sat) Collector-Emitter Saturation Voltage IC = 1.0 A, IB = 100 mA 0.5 V VBE(on) Base-Emitter On Voltage IC = 1.0 A, VCE = 1.0 V 1.0 VSMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 5.0 V, 45 MHz f = 35 MHz NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.Typical Characteristics Typical Pulsed Current Gain Collector-Emitter Saturation
vs Collector Current Voltage vs Collector Current 3001V= 10C E = 5.0V β 250 0.8 200 125 °C 0.6 25 °C 25 °C 0.4 - 40 °C - 40 °C 125 °C 0.2000.01 0.1120.01 0.113I- COLLECTOR CURRENT (A) I C - COLLECTOR CURRENT (A)ChFE- TYPICAL PULSED CURRENT GAIN V - COLLECTOR-EMITTER VOLTAGE (V)CESAT BC369
,PNP General Purpose Amplifier
(continued)Typical Characteristics (continued) Base-Emitter Saturation Base-Emitter ON Voltage vs Voltage vs Collector Current Collector Current
β = 10 0.8 - 40 °C 0.8 - 40 °C 25 °C 0.6 25 °C 0.6 125 °C 125 °C 0.4VCE= 5.0 V 0.4 0.2 1 10 100 1000 1 10 100 1000IC- COLLECTOR CURRENT (mA)I C - COLLECTOR CURRENT (mA)Collector-Cutoff Current Collector-Base Capacitance
vs Ambient Temperature vs Collector-Base Voltage 100 40 f = 1.0 MHzVCB= 20V 10 30 1 20 0.1 10 25 50 75 100 125 1500010 20 30TA- AMBIENT TEMPERATURE (° C) VCB- COLLECTOR-BASE VOLTAGE (V)Gain Bandwidth Product Power Dissipation vs
vs Collector Current Ambient Temperature 250 700VCE= 10V 500 TO-92 150 400 100 30000110 100 1000 0 25 50 75 100 125 150IC- COLLECTOR CURRENT (mA) TEMPER ATURE ( o C) f T - GAIN BANDWIDTH PRODUCT (MHz) ICBO- COLLECTOR CURRENT (nA) VBESAT- BASE-EMITTER VOLTAGE (V) P D - POWER DISSIPATION (mW) C - COLLECTOR-BASE CAPACITANCE (pF) VBE( O N ) - BASE-EMITTER ON VOLTAGE (V)OBOBC369
,TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION
FSCINT Label sample See Fig 2.0 for various FAIRCHILD SEMICONDUCTOR CORPORATION HTB:B Reeling Styles LOT: CBVK741B019 QTY: 10000 NSID: PN2222N SPEC:FSCINT Label
D/C1: D 9842 SPEC REV: B2 QA REV: 5 Reels per (FSCINT) Intermediate BoxCustomized
F63TNR Label sample Label LOT: CBVK741B019 QTY: 2000 F63TNRLabel
FSID: PN222N SPEC:Customized
D/C1: D9842 QTY1: SPEC REV: D/C2: QTY2: CPN: N/F: F (F63TNR)3 Label 375mm x 267mm x 375mmIntermediate Box
TO-92 TNR/AMMO PACKING INFROMATION AMMO PACK OPTIONSee Fig 3.0 for 2 Ammo
Packing Style Quantity EOL codePack Options
Reel A 2,000 D26Z E 2,000 D27Z Ammo M 2,000 D74Z P 2,000 D75Z Unit weight = 0.22 gm FSCINT Reel weight with components = 1.04 kg Label Ammo weight with components = 1.02 kg Max quantity per intermediate box = 10,000 units 327mm x 158mm x 135mm 5 Ammo boxes perImmediate Box Intermediate Box Customized Label Customized F63TNR Label Label 333mm x 231mm x 183mm Intermediate Box
(TO-92) BULK PACKING INFORMATION BULK OPTION EOL DESCRIPTION LEADCLIPSee Bulk Packing
CODE DIMENSION QUANTITY Information table J18Z TO-18 OPTION STD NO LEAD CLIP 2.0 K / BOXAnti-static
J05Z TO-5 OPTION STD NO LEAD CLIP 1.5 K / BOX Bubble SheetsFSCINT Label
NO EOL TO-92 STANDARD CODE STRAIGHT FOR: PKG 92, NO LEADCLIP 2.0 K / BOX 94 (NON PROELECTRON SERIES), 96 L34Z TO-92 STANDARD STRAIGHT FOR: PKG 94 NO LEADCLIP 2.0 K / BOX (PROELECTRON SERIES 2000 units per 114mm x 102mm x 51mm BCXXX, BFXXX, BSRXXX), EO70 box for 97, 98 Immediate Boxstd option 5 EO70 boxes per intermediate Box 530mm x 130mm x 83mm CustomizedIntermediate box Label FSCINT Label
10,000 units maximum per intermediate box for std option ©2001 Fairchild Semiconductor Corporation March 2001, Rev. B1,TO-92 Tape and Reel Data, continued TO-92 Reeling Style Configuration: Figure 2.0 Machine Option “A” (H) Machine Option “E” (J)
Style “A”, D26Z, D70Z (s/h) Style “E”, D27Z, D71Z (s/h)TO-92 Radial Ammo Packaging Configuration: Figure 3.0
FIRST WIRE OFF IS COLLECTOR FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON THE TOP SIDE ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP FLAT OF TRANSISTOR IS ON BOTTOM ORDER STYLE ORDER STYLE D74Z (M) D75Z (P) FIRST WIRE OF F IS EMITTER (ON PKG. 92) FIRST WIRE OFF IS COLLECTOR (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM FLAT OF TRANSISTOR IS ON TOPSeptember 1999, Rev. B
,TO-92 Tape and Reel Data, continued TO-92 Tape and Reel Taping Dimension Configuration: Figure 4.0
Hd P Pd b Ha W1dSL
H1 HO L1 WO t W2W
t1 P1 F1 P2 DO ITEM DESCRIPTION SYMBOL DIMENSIONPO
Base of Package to Lead Bend b 0.098 (max) Component Height Ha 0.928 (+/- 0.025)User Direction of Feed
Lead Clinch Height HO 0.630 (+/- 0.020) Component Base Height H1 0.748 (+/- 0.020) Component Alignment ( side/side ) Pd 0.040 (max) Component Alignment ( front/back ) Hd 0.031 (max) Component Pitch P 0.500 (+/- 0.020) Feed Hole Pitch PO 0.500 (+/- 0.008) Hole Center to First Lead P1 0.150 (+0.009, -0.010) Hole Center to Component Center P2 0.247 (+/- 0.007) Lead Spread F1/F2 0.104 (+/- 0 .010) Lead Thickness d 0.018 (+0.002, -0.003) Cut Lead Length L 0.429 (max) Taped Lead Length L1 0.209 (+0.051, -0.052) Taped Lead Thickness t 0.032 (+/- 0.006) Carrier Tape Thickness t1 0.021 (+/- 0.006) Carrier Tape Width W 0.708 (+0.020, -0.019)TO-92 Reel Hold - down Tape Width WO 0.236 (+/- 0.012) Configuration: Figure 5.0 Hold - down Tape position W1 0.035 (max)
Feed Hole Position W2 0.360 (+/- 0.025) Sprocket Hole Diameter DO 0.157 (+0.008, -0.007) Lead Spring Out S 0.004 (max) Note : All dimensions are in inches.ELECTROSTATIC
SEN SITIVE D EVICES D4 D1 ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM D2 F63TNR Label Reel Diameter D1 13.975 14.025 Arbor Hole Diameter (Standard) D2 1.160 1.200 Customized Label (Small Hole) D2 0.650 0.700 Core Diameter D3 3.100 3.300 Hub Recess Inner Diameter D4 2.700 3.100 Hub Recess Depth W1 0.370 0.570 Flange to Flange Inner Width W2 1.630 1.690 W1 Hub to Hub Center Width W3 2.090 W2 W3 Note: All dimensions are inches D3July 1999, Rev. A
,TO-92 Package Dimensions TO-92 (FS PKG Code 92, 94, 96)
1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.1977 ©2000 Fairchild Semiconductor International January 2000, Rev. B,TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.ACEx™ FASTr™ PowerTrench SyncFET™ Bottomless™ GlobalOptoisolator™ QFET™ TinyLogic™ CoolFET™ GTO™ QS™ UHC™ CROSSVOLT™ HiSeC™ QT Optoelectronics™ VCX™ DOME™ ISOPLANAR™ Quiet Series™ E2CMOSTM MICROWIRE™ SILENT SWITCHER EnSignaTM OPTOLOGIC™ SMART START™ FACT™ OPTOPLANAR™ SuperSOT™-3 FACT Quiet Series™ PACMAN™ SuperSOT™-6 FAST POP™ SuperSOT™-8 DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or This datasheet contains the design specifications for In Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G]15
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