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BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 1 TO-92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage : BC327 -50 V : BC328 -30 V VCEO Collector-Emitter Voltage : BC327 -45 V : BC328 -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -800 mA PC Collector Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characterist...
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BC327/328 Switching and Amplifier Applications

• Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 1 TO-92 1. Collector 2. Base 3. Emitter

PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol Parameter Value Units VCES Collector-Emitter Voltage : BC327 -50 V : BC328 -30 V VCEO Collector-Emitter Voltage : BC327 -45 V : BC328 -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -800 mA PC Collector Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 : BC327 -45 V : BC328 -25 V BVCES Collector-Emitter Breakdown Voltage IC= -0.1mA, VBE=0 : BC327 -50 V : BC328 -30 V BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V ICES Collector Cut-off Current : BC307 VCE= -45V, VBE=0 -2 -100 nA : BC338 VCE= -25V, VBE=0 -2 -100 nA hFE1 DC Current Gain VCE= -1V, IC= -100mA 100 630 hFE2 VCE= -1V, IC= -300mA 40 VCE (sat) Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.7 V VBE (on) Base-Emitter On Voltage VCE= -1V, IC= -300mA -1.2 V fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA, f=20MHz 100 MHz Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 12 pF hFE Classification Classification 16 25 40 hFE1 100 ~ 250 160 ~ 400 250 ~ 630 hFE2 60- 100- 170-,

Typical Characteristics

-500 -20 μA I = - 80 A

B

A = - 70μ m = - 5.0 IBA 0μAm 6 P-400 IB T = - 4.5 -16A I = - = mI0B6B 4. 00 IB = - 3.5mAm= - A 0 μAWImB = - 3 .0 = - IB - 2.5 mA IB -300 I = 0mAB . -12 0μA- 2 I = B IB = - 4 .5mA I = - 0μAB = - 3 -200 -8 IB IB = - 1.0mA PT = 600mW - 20μAIB = IB = - 0.5mA -100 -4 IB = - 10μA IB = 0 IB = 0-0 -1 -2 -3 -4 -5 -10 -20 -30 -40 -50

Figure 1. Static Characteristic Figure 2. Static Characteristic

1000 -10 IC = 10 IB VCE = - 2.0V VCE(sat)100 -1 - 1.0V 10 -0.1 VBE(sat) 1 -0.01 -0.1 -1 -10 -100 -1000 -0.1 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT

Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

-1000 1000 V = -1V VCE = -5.0VCE

PULSE

-100 -10 100 -1 -0.1 10 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1 -10 -100 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 5. Base-Emitter On Voltage Figure 6. Gain Bandwidth Product

IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENThFE, DC CURRENT GAIN VBE(sat), VCE(sat)[V], SATURATION VOLTAGEf [MHz], GAIN-BANDWIDTH PRODUCT IC[mA], COLLECTOR CURRENTT,

Typical Characteristics (Continued)

-1000 f = 1MHz ICP SINGLE PULSE TC=25℃ duty cycle<2% C 00ib ms -100

DC

10 Cob -10 0.1 1 10 100 -1 -1 -10 -100 VBE[V], COLLECTOR-BASE VOLTAGE

Figure 7. Input and Output Capacitance Figure 8. Safe Operating Area

vs. Reverse Voltage 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 175

O

TC [ C], CASE TEMPERATURE

Figure 9. Power Derating

PC [W], POWER DISSIPATION Cib, Cob [pF], CAPACITANCE IC[mA], COLLECTOR CURRENT BC327 s BC328 m = pw,

Package Demensions TO-92

+0.25 4.58 –0.15 0.46 ±0.10 1.27TYP 1.27TYP +0.100.38 –0.05 [1.27 ±0.20] [1.27 ±0.20] 3.60 ±0.20 (R2.29) Dimensions in Millimeters 3.86MAX 1.02 ±0.10 +0.10 0.38 –0.05 (0.25) 14.47 ±0.40 4.58 ±0.20,

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ HiSeC™ SuperSOT™-8 Bottomless™ ISOPLANAR™ SyncFET™ CoolFET™ MICROWIRE™ TinyLogic™ CROSSVOLT™ POP™ UHC™ E2CMOS™ PowerTrench® VCX™ FACT™ QFET™ FACT Quiet Series™ QS™ FAST® Quiet Series™ FASTr™ SuperSOT™-3 GTO™ SuperSOT™-6 DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition Advance Information Formative or In This datasheet contains the design specifications for Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E]
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