Download: Order this document SEMICONDUCTOR TECHNICAL DATA by BC161–16/D PNP Silicon

Order this document SEMICONDUCTOR TECHNICAL DATA by BC161–16/D PNP Silicon COLLECTOR BASE EMITTER MAXIMUM RATINGS Rating Symbol Value Unit21Collector–Emitter Voltage VCEO –60 Vdc CASE 79–04, STYLE 1 TO–39 (TO–205AD) Collector–Base Voltage VCBO –60 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –1.0 Adc Total Device Dissipation @ TA = 25°C PD 0.8 Watts Derate above 25°C 4.6 mW/°C Total Device Dissipation @ TC = 25°C PD 3.7 Watts Derate above 25°C 20 mW/°C Operating and Storage Junction TJ, Tstg –65 to +200 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Sym...
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Order this document SEMICONDUCTOR TECHNICAL DATA by BC161–16/D PNP Silicon COLLECTOR BASE EMITTER

MAXIMUM RATINGS Rating Symbol Value Unit21Collector–Emitter Voltage VCEO –60 Vdc CASE 79–04, STYLE 1 TO–39 (TO–205AD) Collector–Base Voltage VCBO –60 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –1.0 Adc Total Device Dissipation @ TA = 25°C PD 0.8 Watts Derate above 25°C 4.6 mW/°C Total Device Dissipation @ TC = 25°C PD 3.7 Watts Derate above 25°C 20 mW/°C Operating and Storage Junction TJ, Tstg –65 to +200 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 219 °C/W Thermal Resistance, Junction to Case RJC 50 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Cutoff Current ICES (IE = 0, VCES = –60 Vdc) — –100 nAdc (IE = 0, VCES = –60 Vdc, TAmb = 150°C) — –100 µAdc Collector–Emitter Breakdown Voltage V(BR)CES –60 — Vdc (IC = –100 µAdc, IE = 0) Collector–Emitter Breakdown Voltage(1) V(BR)CEO –60 — Vdc (IC = –10 mAdc, IB = 0) Emitter–Base Breakdown Voltage V(BR)EBO –5.0 — Vdc (IE = –100 Adc, IC = 0) 1. Pulsed: Pulse Duration = 300 s, Duty Cycle = 2.0%. (Replaces BC160–16/D) Motorola Small–Signal Transistors, FETs and Diodes Device Data 1 Motorola, Inc. 1997, ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain(1) hFE 100 250 — (IC = –100 mAdc, VCE = –1.0 Vdc) Collector–Emitter Saturation Voltage(1) VCE(sat) — –1.0 Vdc (IC = –1.0 Adc, IB = –0.1 Adc) Base–Emitter Saturation Voltage(1) VBE(on) — –1.7 Vdc (IC = –1.0 Adc, VCE = –1.0 Vdc) SMALL–SIGNAL CHARACTERISTICS Gain Bandwidth Product fT 50 — MHz (IC = –50 mAdc, VCE = –10 Vdc, f = 20 MHz) Input Capacitance Cib — 180 pF (VEB = –10 Vdc, f = 1.0 MHz) Output Capacitance Cobo — 30 pF (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Turn–On Time ton — 500 ns (IC = –100 mAdc, IB1 = –5.0 µAdc) Turn–Off Time toff — 650 ns (IC = –100 mAdc, IB1 = IB2 = –5.0 µAdc) 1. Pulsed: Pulse Duration = 300 s, Duty Cycle = 2.0%.

SWITCHING TIME EQUIVALENT TEST CIRCUITS

2 < t1 < 500 µs 2 < t2 < 5.0 ns– 30V2< t3 > 1.0 µs – 30 V DUTY CYCLE = 2.0% + 2.0 V RC 59 Ω + 8.8 V RC 59 Ω0 SCOPE 0 SCOPE 200 Ω 200 Ω –10.85 V 11.2 VRB t R1 B PULSE WIDTH = 200 ns t3 1N916 RISE TIME ≤ 2.0 ns t2 DUTY CYCLE ≤ 2.0% + 3.0 V Figure 1. Turn–On Figure 2. Turn–Off 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data,

TRANSIENT CHARACTERISTICS

25°C 100°C 100 10 7.0 VCC = – 30 V 50 5.0 IC/IB = 10 Ceb QT30 3.0 20 2.0 10 1.0 Ccb 0.7 5.0 0.5 3.0 0.3

QA

2.0 0.2 1.0 0.1 – 0.1 – 0.2 – 0.3 – 0.5 – 1.0 – 2.0 – 3.0 – 5.0 – 10 – 20– 30 – 50 – 100 – 10 – 20 – 30 – 50 – 100 – 200 – 300 – 500 – 1000 REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 3. Capacitances Figure 4. Charge Data

100 100 VCC = – 30 V70 70 IC/IB = 10 50 IC/IB = 10 50 30 30 20 VBE(off) = 2.0 V 20 VBE(off) = 0 V 10 10 7.0 7.0 5.0 5.0 – 10 – 20 – 30 – 50 – 70 – 100 – 200 – 300 – 500 – 700 – 1000 – 10 – 20 – 30 – 50 – 70 – 100 – 200 – 300 – 500 – 700 – 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 5. Delay Time Figure 6. Rise Time

1000 200 700 IB1 = IB2 VCC = – 30 V 500 IC/IB = 10 IC/IB = 10 100 IB1 = IB2 200 VCC = – 30 V 70 70 ts′ = ts – 1/3 tf 50 30 30 20 10 10 – 10 – 20 – 30 – 50 – 70 – 100 – 200 – 300 – 500 – 700 – 1000 – 10 – 20 – 30 – 50 – 70 – 100 – 200 – 300 – 500 – 700 – 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time Figure 8. Fall Time Motorola Small–Signal Transistors, FETs and Diodes Device Data 3

t s , STORAGE TIME (ns) t, TIME (ns) CAPACITANCE (pF) t f , FALL TIME (ns) t, TIME (ns) Q, CHARGE (nC),

SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C

10 10 9.0 IC = –1.0 mA, RS = 100 9.0 8.0 –100 µA, RS = 680 8.0 –10 A 7.0 –10 µA, RS = 7.0 kΩ 7.0 6.0 6.0 –100 A 5.0 RS = OPTIMUM SOURCE RESISTANCE 5.0 4.0 4.0 3.0 3.0 2.0 2.0 f = 1.0 kHz 1.0 1.0 IC = –1.0 mA000.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 50 100 200 300 500 1.0k 2.0k 3.0k 5.0k 10k 20k 30k 50k f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS)

Figure 9. Frequency Effects Figure 10. Source Resistance Effects

h PARAMETERS

VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C

This group of graphs illustrates the relationship of the “h” parameters for this series of transistors. To obtain these curves, 4 units were selected and identified by number - the same units were used to develop curves on each graph. 300 30 20 3 UNIT 4 10237.0 100 UNIT 15.0 70 3.0 50 1 2.0 30 1.0 0.7 20 0.5 15 0.3 – 0.1 – 0.2 – 0.3 – 0.5 – 1.0 – 2.0 – 3.0 – 5.0 – 10 – 0.1 – 0.2 – 0.3 – 0.5 – 1.0 – 2.0 – 3.0 – 5.0 – 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 11. Current Gain Figure 12. Input Impedance

100 100 70 70 50 50 30 30 20 203410 2 10 7.0 7.0 5.0 5.0 3.0 3.0322.0 UNIT 1 2.0 UNIT 1 1.0 1.0 – 0.1 – 0.2 – 0.3 – 0.5 – 1.0 – 2.0 – 3.0 – 5.0 – 10 – 0.1 – 0.2 – 0.3 – 0.5 – 1.0 – 2.0 – 3.0 – 5.0 – 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance

4 Motorola Small–Signal Transistors, FETs and Diodes Device Datahre, VOLTAGE FEEDBACK RATIO (X 10 – 4 ) hfe, CURRENT GAIN NF, NOISE FIGURE (dB) ho e , OUTPUT ADMITTANCE ( mhos) hie, INPUT IMPEDANCE (k OHMS) NF, NOISE FIGURE (dB),

STATIC CHARACTERISTICS

7.0 VCE = –1.0 V 5.0 TJ = 175°C VCE = –10 V 3.0 2.0 1.0 0.7 0.5 0.3 25°C – 55°C 0.2 0.1 – 1.0 – 2.0 – 3.0 – 5.0 – 7.0 – 10 – 20 – 30 – 50 – 70 – 100 – 200 – 300 – 500 – 700 – 1000 IC, COLLECTOR CURRENT (mA)

Figure 15. DC Current Gain

– 1.0 TJ = 25°C – 0.8 IC = – 1.0 mA – 10 mA – 100 mA – 500 mA – 0.6 – 0.4 – 0.2 – 0.005 – 0.007 – 0.01 – 0.02 – 0.03 – 0.05 – 0.07 – 0.1 – 0.2 – 0.3 – 0.5 – 0.7 – 1.0 – 2.0 – 3.0 – 5.0 – 7.0 – 10 – 20 – 30 – 50 IB, BASE CURRENT (mA)

Figure 16. Collector Saturation Region

– 1.0 + 1.0 – 0.8 0 θVC for VCE(sat) VBE(sat) @ IC/IB = 10 – 0.6 – 1.0 VBE(on) @ VCE = –1.0 V – 0.4 – 2.0 θVB for VBE – 0.2 – 3.0 VCE(sat) @ IC/IB = 10 0 – 4.0 – 1.0 – 2.0 – 3.0 – 5.0 – 10 – 20 – 30 – 50 – 100 – 200– 300 – 500 – 1000 – 1.0 – 2.0 – 3.0 – 5.0 – 10 – 20 – 30 – 50 – 100 – 200 – 300 – 500 – 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 17. “On” Voltages Figure 18. Temperature Coefficients Motorola Small–Signal Transistors, FETs and Diodes Device Data 5

VOLTAGE (VOLTS) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) hFE, DC CURRENT GAIN (NORMALIZED) COEFFICIENT (mV/°C),

RATINGS AND THERMAL DATA

– 3.0 – 2.0 The safe operating area curves indicate IC–VCE limits of the – 1.0 transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by – 0.5 the applicable curve. TJ = 200°C 0.1 ms1.0 ms The data of Figure 19 is based upon TJ(pk) = 200°C; TC is variable – 0.3 SECONDARY BREAKDOWN depending upon conditions. Pulse curves are valid for duty cycles – 0.2 LIMITED to 10% provided TJ(pk) ≤ 200°C. At high case temperatures, thermal BONDING WIRE LIMITED limitations will reduce the power that can be handled to values less – 0.1 THERMALLY LIMITED than the limitations imposed by second breakdown.dc – 0.07 TC = 25°C (SINGLE PULSE) – 0.05 CURVES APPLY BELOW RATED V – 0.03 CEO – 1.0 – 2.0 – 3.0 – 5.0 – 7.0 – 10 – 20 – 30 – 50 – 70 – 100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 19. Safe Operating Area

6 Motorola Small–Signal Transistors, FETs and Diodes Device Data IC, COLLECTOR CURRENT (AMP),

PACKAGE DIMENSIONS

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI –A– Y14.5M, 1982.

R B 2. CONTROLLING DIMENSION: INCH.3. DIMENSION J MEASURED FROM DIMENSION A

MAXIMUM.

C 4. DIMENSION B SHALL NOT VARY MORE THAN

SEATING 0.25 (0.010) IN ZONE R. THIS ZONE –T– PLANEF L CONTROLLED FOR AUTOMATIC HANDLING.

E 5. DIMENSION F APPLIES BETWEEN DIMENSION PKPAND L. DIMENSION D APPLIES BETWEENDIMENSION L AND K MINIMUM. LEAD

DIAMETER IS UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM.

D 3 PL INCHES MILLIMETERS

0.36 (0.014) MTAMHMDIM MIN MAX MIN MAX A 0.335 0.370 8.51 9.39 B 0.305 0.335 7.75 8.50 –H– 2 C 0.240 0.260 6.10 6.6013GD0.016 0.021 0.41 0.53 STYLE 1: E 0.009 0.041 0.23 1.04

M PIN 1. EMITTER F 0.016 0.019 0.41 0.482. BASE G 0.200 BSC 5.08 BSC

3. COLLECTOR

J H 0.028 0.034 0.72 0.86

J 0.029 0.045 0.74 1.14 K 0.500 0.750 12.70 19.05 L 0.250 ––– 6.35 ––– M 45 BSC 45 BSC

CASE 079–04 P ––– 0.050 ––– 1.27

(TO–205AD) R 0.100 ––– 2.54 –––

ISSUE N Motorola Small–Signal Transistors, FETs and Diodes Device Data 7

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315 Mfax: email is hidden – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps 8 ◊ Motorola Small–Signal Transistors, FETs and Diodes DBevCi1c6e1 D–1a6t/aD]
15

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