Download: DATA SHEET BB901 VHF variable capacitance diode

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BB901 VHF variable capacitance diode Product specification 1996 May 03 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES • Excellent linearity • Small plastic SMD package • C28: 1 pF; ratio: 13.5 handbook, halfpa2ge 1 APPLICATIONS21• Electronic tuning in satellite tuners n.c. • Tunable coupling • VCO. 3 MAM170 DESCRIPTION The BB901 is a variable capacitance Marking code: S14. diode, fabricated in planar technology, and encapsulated in the Fig.1 Simplified outline (SOT23), pin configuration and symbol....
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, halfpage M3D088

BB901 VHF variable capacitance diode

Product specification 1996 May 03 Supersedes data of November 1993 File under Discrete Semiconductors, SC01,

FEATURES

• Excellent linearity • Small plastic SMD package • C28: 1 pF; ratio: 13.5 handbook, halfpa2ge 1

APPLICATIONS

2 1 • Electronic tuning in satellite tuners n.c. • Tunable coupling • VCO. 3 MAM170

DESCRIPTION

The BB901 is a variable capacitance Marking code: S14. diode, fabricated in planar technology, and encapsulated in the Fig.1 Simplified outline (SOT23), pin configuration and symbol. SOT23 small plastic SMD package. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VR continuous reverse voltage − 28 V IF continuous forward current − 20 mA Tstg storage temperature −55 +150 °C Tj operating junction temperature −55 +125 °C ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IR reverse current VR = 28 V; see Fig.3 − − 10 nA VR = 28 V; Tj = 85 °C; see Fig.3 − − 200 nA rs diode series resistance f = 100 MHz; note 1 − − 3 Ω Cd diode capacitance VR = 28 V; f = 1 MHz; see Figs 2 and 4 − − 1.055 pF C capacitance ratio f = 1 MHz 12 − − -d-(-0-.-5-V-)- Cd (28V) Note 1. VR is the value at which Cd = 10 pF. 1996 May 03 2, GRAPHICAL DATA MBE622 handbook, full pagewidth Cd (pF) 101110 2V R (V) f = 1 MHz; Tj = 25 °C Fig.2 Diode capacitance as a function of reverse voltage; typical values. MLC816 MLC8151310 handbook,0 halfpage handbook, halfpage I TCR d (nA) (K−1) 102 10 10 1012050 100 10 1 10 10Tj( o C) VR (V) Tj = 0 to 85 °C. Fig.4 Temperature coefficient of diode Fig.3 Reverse current as a function of junction capacitance as a function of reverse temperature; maximum values. voltage; typical values. 1996 May 03 3, PACKAGE OUTLINE 3.0 handbook, full pagewidth 2.8

B

1.9 0.150 0.55 0.090 0.95 A 0.2MA0.4521o0.1 10 max 2.5 max 1.4 1.2 max 10 o max 1.1 0.48 max 30 o 0.38 0.1MABMBC846 max TOP VIEW Dimensions in mm. Fig.5 SOT23.

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 03 4]
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