Download: DATA SHEET BB804 VHF variable capacitance double diode

DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, halfpage M3D088

BB804 VHF variable capacitance double

diode Product specification 1996 May 03 Supersedes data of November 1993 File under Discrete Semiconductors, SC01, FEATURES MARKING PINNING • Selected capacitance ranges TYPE NUMBER CODE PIN DESCRIPTION • Small plastic SMD package BB804 R SF01anode (a1) • C8: 26 pF; ratio: 1.7 BB804 Y SF12anode (a2) • Low series resistance. BB804 W SF23common cathode BB804 G SF 3

APPLICATIONS

• Electronic tuning in FM radio applications. handbook, halfpa2ge121

DESCRIPTION

The BB804 is a variable capacitance 3 double diode with a common cathode, fabricated in planar technology, and 3 MAM169 encapsulated in the SOT23 small plastic SMD package. Fig.1 Simplified outline (SOT23), pin configuration and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT Per diode VR continuous reverse voltage − 18 V IF continuous forward current − 50 mA Tstg storage temperature −55 +150 °C Tj operating junction temperature −55 +125 °C 1996 May 03 2, ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per diode IR reverse current VR = 16 V; see Fig.3 − − 20 nA VR = 16 V; Tj = 60 °C; see Fig.3 − − 200 nA rs diode series resistance f = 100 MHz; note 1 − 0.2 − Ω Cd diode capacitance VR = 2 V; f = 1 MHz; red 0; see Figs 2 and 4 42 − 43.5 pF VR = 2 V; f = 1 MHz; yellow 1; see Figs 2 and 4 43 − 44.5 pF VR = 2 V; f = 1 MHz; white 2; see Figs 2 and 4 44 − 45.5 pF VR = 2 V; f = 1 MHz; green 3; see Figs 2 and 4 45 − 46.5 pF C capacitance ratio f = 1 MHz 1.65 − 1.75 -d-(-2-V-) Cd (8V) Note 1. VR is the value at which Cd = 38 pF. 1996 May 03 3, GRAPHICAL DATA MGC815 handbook, full pagewidth Cd (pF) −1 f = 1 MHz1; 0Tamb = 25 °C 1 10VR (V) Fig.2 Diode capacitance as a function of reverse voltage; typical values. MGC810 MLC8153 handboo1 3 10 k,0 halfpage handbook, halfpage IR TC d (nA) (K−1) 102 10 10 510 0 20 40 60 80 100 101110 V (V) 10ToRj ( C) Fig.4 Temperature coefficient of diode Fig.3 Reverse current as a function of junction capacitance as a function of reverse temperature; maximum values. voltage; typical values. 1996 May 03 4, PACKAGE OUTLINE 3.0 handbook, full pagewidth 2.8

B

1.9 0.150 0.55 0.090 0.95 A 0.2MA0.45210.1 10 o max max 1.4 2.5 1.2 max 10 o max 1.1 0.48 max 30 o 0.38 0.1MABMBC846 max TOP VIEW Dimensions in mm. Fig.5 SOT23.

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 03 5]

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