Download: DATA SHEET BB112 AM variable capacitance diode

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D053 BB112 AM variable capacitance diode Product specification 1996 May 03 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES • Matched to 3% • kLeaded plastic package handbook, halfpage • C8.5: 23 pF; ratio: 21. a MAM222 APPLICATIONS • Electronic tuning in AM radio Fig.1 Simplified outline (SOD69; TO-92 variant) and symbol. applications • VCO. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). DESCRIPTION SYMBOL PARAMETER MIN. MAX. UNIT The BB112 is a variable capacitance diode, ...
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, halfpage M3D053

BB112 AM variable capacitance diode

Product specification 1996 May 03 Supersedes data of April 1992 File under Discrete Semiconductors, SC01,

FEATURES

• Matched to 3% • kLeaded plastic package handbook, halfpage • C8.5: 23 pF; ratio: 21. a MAM222

APPLICATIONS

• Electronic tuning in AM radio Fig.1 Simplified outline (SOD69; TO-92 variant) and symbol. applications • VCO. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).

DESCRIPTION

SYMBOL PARAMETER MIN. MAX. UNIT The BB112 is a variable capacitance diode, fabricated in planar VR continuous reverse voltage − 12 V technology, and encapsulated in the IF continuous forward current − 50 mA SOD69 (TO-92 variant) leaded plastic package. Tstg storage temperature −55 +125 °C Tj operating junction temperature −55 +85 °C ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IR reverse current VR = 12 V; see Fig.3 − − 50 nA VR = 12 V; Tj = 85 °C; see Fig.3 − − 300 nA rs diode series resistance f = 500 kHz; note 1 − − 1.5 Ω Cd diode capacitance VR = 1 V; f = 1 MHz; see Figs 2 and 4 440 − 540 pF VR = 8.5 V; f = 1 MHz; see Figs 2 and 4 17 − 29 pF C capacitance ratio f = 1 MHz − 18 − -d-(-1-V-)- Cd (8.5V) ∆C capacitance matching VR = 1 to 9 V; note 2 − − 3 % -d- Cd Notes 1. VR = 1 V. 2. For a set of 3 diodes. 1996 May 03 2, GRAPHICAL DATA MGC808 handbook, full pagewidth Cd (pF) 10−1 1 10 VR (V) f = 1 MHz. Fig.2 Diode capacitance as a function of reverse voltage; typical values. MGC809 MLC815 3 10 3 handboo1k,0 halfpage handbook, halfpage IR TC d (nA) (K−1) 102 10 10 10 0 20 40 60 80 100 1011102oVR (V) Tj ( C) Fig.4 Temperature coefficient of diode Fig.3 Reverse current as a function of junction capacitance as a function of reverse temperature; maximum values. voltage; typical values. 1996 May 03 3, PACKAGE OUTLINE 0.40 min 4.2 max 1.6 5.2 max 12.7 min 0.49 max 4.8 k max 2.54 a MBC879 0.67 max dimensions within 2.5 max uncontrolled Dimensions in mm. Fig.5 SOD69 (TO-92 variant).

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 03 4]
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