Download: MDTRAA absolute maximum ratings at 25°C case temperature (unless otherwise noted)

Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 ● Designed for Complementary Use with BDW83, BDW83A, BDW83B, BDW83C and SOT-93 PACKAGE (TOP VIEW) BDW83D ● 150 W at 25°C Case TemperatureB1● 15 A Continuous Collector CurrentC2● Minimum hFE of 750 at 3 V, 6AE3Pin 2 is in electrical contact with the mounting base. MDTRAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BDW84 -45 BDW84A -60 Collector-base voltage (IE = 0) BDW84B VCBO -80 V BDW84C -100 BDW84D -120 BDW84 -45 BDW84A -60 Collector-emitter voltage (IB = ...
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Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 ● Designed for Complementary Use with

BDW83, BDW83A, BDW83B, BDW83C and SOT-93 PACKAGE

(TOP VIEW)

BDW83D

● 150 W at 25°C Case TemperatureB1● 15 A Continuous Collector CurrentC2● Minimum hFE of 750 at 3 V, 6AE3Pin 2 is in electrical contact with the mounting base.

MDTRAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BDW84 -45 BDW84A -60 Collector-base voltage (IE = 0) BDW84B VCBO -80 V BDW84C -100 BDW84D -120 BDW84 -45 BDW84A -60 Collector-emitter voltage (IB = 0) (see Note 1) BDW84B VCEO -80 V BDW84C -100 BDW84D -120 Emitter-base voltage VEBO -5 V Continuous collector current IC -15 A Continuous base current IB -0.5 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 150 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3.5 W Unclamped inductive load energy (see Note 4) ½LI 2C 100 mJ Operating junction temperature range Tj -65 to +150 °C Operating temperature range Tstg -65 to +150 °C Operating free-air temperature range TA -65 to +150 °C NOTES: 1. These values apply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 1.2 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. 4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V. Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters., electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT BDW84 -45 BDW84A -60 Collector-emitter V(BR)CEO IC = -30 mA Ibreakdown voltage B = 0 (see Note 5) BDW84B -80 V BDW84C -100 BDW84D -120 VCE = -30 V IB = 0 BDW84 -1 V = -30VICollector-emitter CE B = 0 BDW84A -1 ICEO VCE = -40 V IB = 0 BDW84B -1 mAcut-off current VCE = -50 V IB = 0 BDW84C -1 VCE = -60 V IB = 0 BDW84D -1 VCB = -45 V IE = 0 BDW84 -0.5 VCB = -60 V IE = 0 BDW84A -0.5 VCB = -80 V IE = 0 BDW84B -0.5 VCB = -100 V IE = 0 BDW84C -0.5 Collector cut-off VCB = -120 V IE = 0 BDW84D -0.5ICBO mAcurrent VCB = -45 V IE = 0 TC = 150°C BDW84 -5 VCB = -60 V IE = 0 TC = 150°C BDW84A -5 VCB = -80 V IE = 0 TC = 150°C BDW84B -5 VCB = -100 V IE = 0 TC = 150°C BDW84C -5 VCB = -120 V IE = 0 TC = 150°C BDW84D -5 Emitter cut-off IEBO VEB = -5 V IC = 0 -2 mAcurrent Forward current VCE = -3 V IC = -6 A 750 20000hFE (see Notes 5 and 6)transfer ratio VCE = -3 V IC = -15 A 100 Base-emitter VBE(on) VCE = -3 V IC = -6 A (see Notes 5 and 6) -2.5 Vvoltage Collector-emitter IB = -12 mA IC = -6 A -2.5VCE(sat) (see Notes 5 and 6) Vsaturation voltage IB = -150 mA IC = -15 A -4 Parallel diode VEC I = -15AI= 0 -3.5 Vforward voltageEBNOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 0.83 °C/W RθJA Junction to free air thermal resistance 35.7 °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT ton Turn-on time IC = -10 A IB(on) = -40 mA IB(off) = 40 mA 0.9 µs toff Turn-off time VBE(off) = 4.2 V RL = 3 Ω tp = 20 µs, dc ≤ 2% 7 µs † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.,

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN COLLECTOR-EMITTER SATURATION VOLTAGE vs vs COLLECTOR CURRENT COLLECTOR CURRENT TCS145AG TCS145AH 10000 -2·0 T = -40°C tp = 300 µs, duty cycle < 2%C TC = 25°C IB = IC / 100 TC = 100°C -1·5 1000 -1·0 -0·5 TC = -40°C VCE = -3 V TC = 25°C tp = 300 µs, duty cycle < 2% TC = 100°C 100 0 -0·5 -1·0 -10 -20 -0·5 -1·0 -10 -20 IC - Collector Current - A IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS145AI -3·0 TC = -40°C TC = 25°C -2·5 TC = 100°C -2·0 -1·0 -1·5 -0·5 IB = IC / 100 tp = 300 µs, duty cycle < 2% -0·5 -1·0 -10 -20 IC - Collector Current - A Figure 3. hFE - Typical DC Current Gain VBE(sat) - Base-Emitter Saturation Voltage - V VCE(sat) - Collector-Emitter Saturation Voltage - V,

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS SAFE OPERATING AREA SAS145AB -100 -10 -1·0 BDW84 BDW84A BDW84B BDW84C BDW84D -0·1 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4.

THERMAL INFORMATION

MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS140AB 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. Ptot - Maximum Power Dissipation - W IC - Collector Current - A, MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 15,2 1,37 ø 4,1 14,7 3,95 1,17 4,0 4,15 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1231,30 0,78 1,10 0,50 11,1 2,50 TYP. 10,8 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW, IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited]
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