Download: MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted)

Copyright © 1997, Power Innovations Limited, UK MAY 1993 - REVISED MARCH 1997 ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 TO-220 PACKAGE (TOP VIEW) ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector CurrentB1● Minimum hFE of 750 at 3 V, 3AC2E3Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BD646 -80 BD648 -100 Collector-base voltage (IE = 0) V VBD650 CBO -120 BD652 -140 BD646 -60 BD648 -80 Collector-emitter voltage (IB = 0) VBD650 CEO V -100 BD652...
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Copyright © 1997, Power Innovations Limited, UK MAY 1993 - REVISED MARCH 1997 ● Designed for Complementary Use with

BD645, BD647, BD649 and BD651 TO-220 PACKAGE

(TOP VIEW) ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector CurrentB1● Minimum hFE of 750 at 3 V, 3AC2E3Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BD646 -80 BD648 -100 Collector-base voltage (IE = 0) V VBD650 CBO -120 BD652 -140 BD646 -60 BD648 -80 Collector-emitter voltage (IB = 0) VBD650 CEO

V

-100 BD652 -120 Emitter-base voltage VEBO -5 V Continuous collector current IC -8 A Peak collector current (see Note 1) ICM -12 A Continuous base current IB -0.3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 62.5 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot2WUnclamped inductive load energy (see Note 4) ½LI 2C 50 mJ Operating junction temperature range Tj -65 to +150 °C Storage temperature range Tstg -65 to +150 °C Lead temperature 3.2 mm from case for 10 seconds TL 260 °C NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. 4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V. Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters., electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT BD646 -60 Collector-emitter BD648 -80 V(BR)CEO I = -30 mA I = 0 (see Note 5) Vbreakdown voltageCBBD650 -100 BD652 -120 VCE = -30 V IB = 0 BD646 -0.5 Collector-emitter VCE = -40 V IB = 0 BD648 -0.5ICEO mAcut-off current VCE = -50 V IB = 0 BD650 -0.5 VCE = -60 V IB = 0 BD652 -0.5 VCB = -60 V IE = 0 BD646 -0.2 VCB = -80 V IE = 0 BD648 -0.2 VCB = -100 V IE = 0 BD650 -0.2 Collector cut-off VCB = -120 V IE = 0 BD652 -0.2ICBO mAcurrent VCB = -40 V IE = 0 TC = 150°C BD646 -2.0 VCB = -50 V IE = 0 TC = 150°C BD648 -2.0 VCB = -60 V IE = 0 TC = 150°C BD650 -2.0 VCB = -70 V IE = 0 TC = 150°C BD652 -2.0 Emitter cut-off IEBO VEB = -5 V IC = 0 (see Notes 5 and 6) -5 mAcurrent Forward current hFE Vtransfer ratio CE = -3 V IC = -3 A (see Notes 5 and 6) 750 Collector-emitter IB = -12 mA IC = -3 A -2VCE(sat) (see Notes 5 and 6) Vsaturation voltage IB = -50 mA IC = -5 A -2.5 Base-emitter VBE(sat) Isaturation voltage B = -50 mA IC = -5 A (see Notes 5 and 6) -3 V Base-emitter VBE(on) VCE = -3 V IC = -3 A (see Notes 5 and 6) -2.5 Vvoltage NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 2.0 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W,

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN COLLECTOR-EMITTER SATURATION VOLTAGE vs vs COLLECTOR CURRENT COLLECTOR CURRENT TCS135AD TCS135AB 50000 -2·0 TC = -40°C tp = 300 µs, duty cycle < 2% TC = 25°C IB = IC / 100 TC = 100°C -1·5 -1·0 TC = -40°C VCE = -3 V TC = 25°C tp = 300 µs, duty cycle < 2% TC = 100°C 100 -0·5 -0·5 -1·0 -10 -0·5 -1·0 -10 IC - Collector Current - A IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS135AC -3·0 TC = -40°C TC = 25°C TC = 100°C-2·5 -2·0 -1·5 -1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% -0·5 -0·5 -1·0 -10 IC - Collector Current - A Figure 3. hFE - Typical DC Current Gain VBE(sat) - Base-Emitter Saturation Voltage - V VCE(sat) - Collector-Emitter Saturation Voltage - V,

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS SAFE OPERATING AREA SAS135AC -10 -1·0 -0·1 BD646 BD648 BD650 BD652 -0.01 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4.

THERMAL INFORMATION

MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS130AC 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. Ptot - Maximum Power Dissipation - W IC - Collector Current - A,

MECHANICAL DATA TO-220

3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 3,96 10,4 1,32 ø 3,71 10,0 2,95 1,23 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 14,1 1,70 12,7 0,97 1,07 0,611232,74 0,64 2,34 0,41 5,28 2,90 4,88 2,40 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. MDXXBE B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm., IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited]
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