Download: NPN SILICON POWER TRANSISTOR

BD239C NPN SILICON POWER TRANSISTOR ■ STMicroelectronics PREFERRED SALESTYPE DESCRIPTION The BD239C is a silicon epitaxial-base NPN transistor in Jedec TO-220 plastic package. It is inteded for use in medium power linear and switching applications. TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCER Collector-Emit ter Voltage (RBE = 100Ω) 115 V VCEO Collector-Emit ter Voltage (IB = 0) 100 V VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current2AICM Collector Peak Current4AIB Base Current 0.6 A Ptot Total Dissipation at Tc ≤ 25 oC 30 W Ptot Total D...
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BD239C

NPN SILICON POWER TRANSISTOR

■ STMicroelectronics PREFERRED

SALESTYPE DESCRIPTION

The BD239C is a silicon epitaxial-base NPN transistor in Jedec TO-220 plastic package. It is inteded for use in medium power linear and switching applications. TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCER Collector-Emit ter Voltage (RBE = 100Ω) 115 V VCEO Collector-Emit ter Voltage (IB = 0) 100 V VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current2AICM Collector Peak Current4AIB Base Current 0.6 A Ptot Total Dissipation at Tc ≤ 25 oC 30 W Ptot Total Dissipation at T oamb ≤ 25C2WTstg Storage Temperature -65 to 150 oC Tj Max. Operat ing Junction Temperature 150 oC April 1999 1/4,

THERMAL DATA

Rthj-ca se Thermal Resistance Junction-case Max 4.17 Rthj- amb Thermal Resistance Junction-ambient Max 62.5

ELECTRICAL CHARACTERISTICS (T ocase = 25 C unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-of f VCE = 100 V 0.2 mA Current (VBE = 0) ICEO Collector Cut-of f VCE = 60 V 0.3 mA Current (IB = 0) IEBO Emitter Cut-of f Current VEB = 5V1mA (IC = 0) VCEO(sus )∗ Collector-Emit ter IC = 30 mA 100 V Sustaining Voltage VCE(sat )∗ Collector-Emit ter IC = 1 A IB = 0.2 A 0.7 V Saturation Voltage VBE∗ Base-Emitter Voltage IC = 1 A VCE = 4 V 1.3 V hF E∗ DC Current Gain IC = 0.2 A VCE = 4 V 40 IC = 1 A VCE = 4 V 15 hfe Small Signal Current IC = 0.2 A VCE = 10Vf= 1MHz 3 Gain IC = 0.2 A VCE = 10Vf= 1KHz 20 ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %

Safe Operating Areas

2/4,

TO-220 MECHANICAL DATA

mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151

P011C

3/4, Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 4/4]
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