Download: Electrical Characteristics at TA = 25°C

PNP Silicon AF Transistors For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW65, BCW66 (NPN) 1 VPS05161 Type Marking Pin Configuration Package BCW67A DAs 1 = B 2 = E 3 = C SOT23 BCW67B DBs 1 = B 2 = E 3 = C SOT23 BCW67C DCs 1 = B 2 = E 3 = C SOT23 BCW68F DFs 1 = B 2 = E 3 = C SOT23 BCW68G DGs 1 = B 2 = E 3 = C SOT23 BCW68H DHs 1 = B 2 = E 3 = C SOT23 Maximum Ratings Parameter Symbol BCW67 BCW68 Unit Collector-emitter voltage VCEO 32 45 V Collector-base voltage VCBO 45 60 Emitter-base voltage VEBO55DC collector current IC 800 mA Peak ...
Author: Mewael Shared: 8/19/19
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PNP Silicon AF Transistors For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW65, BCW66 (NPN) 1 VPS05161 Type Marking Pin Configuration Package BCW67A DAs 1 = B 2 = E 3 = C SOT23 BCW67B DBs 1 = B 2 = E 3 = C SOT23 BCW67C DCs 1 = B 2 = E 3 = C SOT23 BCW68F DFs 1 = B 2 = E 3 = C SOT23 BCW68G DGs 1 = B 2 = E 3 = C SOT23 BCW68H DHs 1 = B 2 = E 3 = C SOT23 Maximum Ratings Parameter Symbol BCW67 BCW68 Unit Collector-emitter voltage VCEO 32 45 V Collector-base voltage VCBO 45 60 Emitter-base voltage VEBO55DC collector current IC 800 mA Peak collector current ICM1ABase current IB 100 mA Peak base current IBM 200 Total power dissipation, TS = 79 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 215 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance 1 Jul-10-2001, Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 BCW67 32 - - BCW68 45 - - Collector-base breakdown voltage V(BR)CBO IC = 10 µA, IB = 0 BCW67 45 - - BCW68 60 - - Emitter-base breakdown voltage V(BR)EBO 5 - - IE = 10 µA, IC = 0 Collector cutoff current ICBO nA VCB = 32 V, IE = 0 BCW67 - - 20 VCB = 45 V, IE = 0 BCW68 - - 20 Collector cutoff current ICBO µA VCB = 32 V, IE = 0 , TA = 150 °C BCW67 - - 20 VCB = 45 V, IE = 0 , TA = 150 °C BCW68 - - 20 Emitter cutoff current IEBO - - 20 nA VEB = 4 V, IC = 0 DC current gain 1) hFE - IC = 100 µA, VCE = 10 V hFE-grp.A/F 35 - - hFE-grp.B/G 50 - - hFE-grp.C/H 80 - - DC current gain 1) hFE IC = 10 mA, VCE = 1 V hFE-grp.A/F 75 - - hFE-grp.B/G 120 - - hFE-grp.C/H 180 - - DC current gain 1) hFE IC = 100 mA, VCE = 1 V hFE-grp.A/F 100 160 250 hFE-grp.B/G 160 250 400 hFE-grp.C/H 250 350 630 1) Pulse test: t ≤ 300µs, D = 2% 2 Jul-10-2001, DC current gain 1) hFE - IC = 500 mA, VCE = 2 V hFE-grp.A/F 35 - - hFE-grp.B/G 60 - - hFE-grp.C/H 100 - - Collector-emitter saturation voltage1) VCEsat V IC = 100 mA, IB = 10 mA - - 0.3 IC = 500 mA, IB = 50 mA - - 0.7 Base-emitter saturation voltage 1) VBEsat IC = 100 mA, IB = 10 mA - - 1.25 IC = 500 mA, IB = 50 mA - - 2 AC Characteristics Transition frequency fT - 200 - MHz IC = 50 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance Ccb - 6 - pF VCB = 10 V, f = 1 MHz Emitter-base capacitance Ceb - 60 - VEB = 0.5 V, f = 1 MHz 3 Jul-10-2001,

Total power dissipation Ptot = f(TS) Transition frequency fT = f (IC) VCE = 5V

BCW 67/68 EHP00398 360 103 mW MHz f 5300 T 180 10 0 10 0 15 30 45 60 75 90 105 120 °C 150 100 5 1015102 mA 10 3 TSΙC

Permissible pulse load Collector cutoff current ICBO = f (TA) Ptotmax / PtotDC = f (tp) VCB = VCEmax

3 BCW 67/68 EHP00399 5 BCW 67/68 EHP0040010 10 P nAtotmax5tPtpptotDC D = T Ι CB0 T 10 4 102 D = 0350.005 0.01 max 0.02 5 0.05 0.1 0.2 10 2 101 0.5 5 typ51100 10 0 10-6 10-5 10-4 10-3 10-2 s 100 0 50 100 ˚C 150tpTA 4 Jul-10-2001 Ptot,

Base-emitter saturation voltage Collector-emitter saturation voltage IC = f (VBEsat), hFE = 10 IC = f (VCEsat), hFE = 10

3 BCW 67/68 EHP00401 3 BCW 67/68 EHP0040210 10 mA mA 150 ˚C Ι 25 ˚C Ι 150 ˚CC C 25 ˚C -50 ˚C 2 10 2 10 -50 ˚C 10 1 1010010 105510 -1 10 -10123V40200 400 600 mV 800 VBE sat VCE sat

DC current gain hFE = f (IC) VCE = 1V

3 BCW 67/68 EHP0040310 5 100 ˚C hFE 25 ˚C 102 -50 ˚C 10-1 5 1005101510 2 mA 103ΙC5Jul-10-2001]
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