Download: NPN Silicon Darlington Transistors BC 875

NPN Silicon Darlington Transistors BC 875 ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC 876, BC 878 BC 880 (PNP) Type Marking Ordering Code Pin Configuration Package1) 123BC 875 – C62702-C853ECBTO-92 BC 877 C62702-C854 BC 879 C62702-C855 Maximum Ratings Parameter Symbol Values Unit BC 875 BC 877 BC 879 Collector-emitter voltage VCE0 45 60 80 V Collector-base voltage VCB0 60 80 100 Emitter-base voltage VEB0 5 Collector current IC1APeak collector current ICM 2 Base current IB 100 mA Peak base current IBM 200 Total power dissipation, TC = 90 ˚C2) Ptot 0....
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NPN Silicon Darlington Transistors BC 875

● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC 876, BC 878 BC 880 (PNP) Type Marking Ordering Code Pin Configuration Package1) 123BC 875 – C62702-C853ECBTO-92 BC 877 C62702-C854 BC 879 C62702-C855 Maximum Ratings Parameter Symbol Values Unit BC 875 BC 877 BC 879 Collector-emitter voltage VCE0 45 60 80 V Collector-base voltage VCB0 60 80 100 Emitter-base voltage VEB0 5 Collector current IC1APeak collector current ICM 2 Base current IB 100 mA Peak base current IBM 200 Total power dissipation, TC = 90 ˚C2) Ptot 0.8 (1) W Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 156 K/W Junction - case3) Rth JC ≤ 75 1) For detailed information see chapter Package Outlines. 2) If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C. 3) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 1 5.91, Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage V(BR)CE0 V IC = 50 mA BC 875 45 – – BC 877 60 – – BC 879 80 – – Collector-base breakdown voltage V(BR)CB0 IC = 100 µA BC 875 60 – – BC 877 80 – – BC 879 100 – – Emitter-base breakdown voltage, IE = 100 µA V(BR)EB0 5 – – Collector cutoff current ICE0 – – 500 nA VCE = 0.5 × VCEmax Collector cutoff current ICB0 VCB = VCBmax – – 100 nA VCB = VCBmax, TA = 150 ˚C – – 20 µA Emitter cutoff current, VEB = 4 V IEB0 – – 100 nA DC current gain hFE – IC = 150 mA; VCE = 10 V1) 1000 – – IC = 500 mA; VCE = 10 V1) 2000 – – Collector-emitter saturation voltage1) VCEsat V IC = 500 mA, IB = 0.5 mA – – 1.3 IC = 1 A, IB = 1 mA – – 1.8 Base-emitter saturation voltage1) VBEsat – – 2.2 IC = 1 A; IB = 1 mA AC characteristics Transition frequency fT – 150 – MHz IC = 200 mA, VCE = 5 V, f = 20 MHz 1) Pulse test: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 2, Total power dissipation Ptot = f (TA; TC) Collector cutoff current ICB0 = f (TA) VCB = 100 V Permissible pulse load RthJA = f (tp) DC current gain hFE = f (TA) VCE = 10 V Semiconductor Group 3, DC current gain hFE = f (IC) Transition frequency fT = f (IC) VCE = 10 V, TA = 25 ˚C VCE = 5 V, f = 20 MHz Collector-emitter saturation voltage Base-emitter saturation voltage VCEsat = f (IC) VBEsat = f (IC) Parameter = IB, TA = 25 ˚C Parameter = IB, TA = 25 ˚C Semiconductor Group 4]
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