Download: DISCRETE SEMICONDUCTORS DATA SHEET BGY206 UHF amplifier module Preliminary specification 1996 May 29 File under Discrete Semiconductors, SC09

DISCRETE SEMICONDUCTORS DATA SHEET BGY206 UHF amplifier module Preliminary specification 1996 May 29 File under Discrete Semiconductors, SC09 FEATURES PINNING - SOT388A • 4.8 V nominal supply voltage PIN DESCRIPTION • 3 W output power 1 RF input • Easy control of output power by DC voltage. 2 VC 3 VS APPLICATIONS 4 RF output • Digital cellular radio systems with Time Division Multiple Flange ground Access (TDMA) operation (GSM systems) in the 880 to 915 MHz frequency range. DESCRIPTION The BGY206 is a three-stage UHF amplifier module in a SOT388A package. The module consists of three NPN silic...
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DISCRETE SEMICONDUCTORS

DATA SHEET BGY206 UHF amplifier module

Preliminary specification 1996 May 29 File under Discrete Semiconductors, SC09, FEATURES PINNING - SOT388A • 4.8 V nominal supply voltage PIN DESCRIPTION • 3 W output power 1 RF input • Easy control of output power by DC voltage. 2 VC 3 VS APPLICATIONS 4 RF output • Digital cellular radio systems with Time Division Multiple Flange ground Access (TDMA) operation (GSM systems) in the 880 to 915 MHz frequency range.

DESCRIPTION

The BGY206 is a three-stage UHF amplifier module in a SOT388A package. The module consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized1234ceramic substrate. Top view MSA486 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Tmb = 25 °C. MODE OF f VS VC PL Gp η ZS; ZL OPERATION (MHz) (V) (V) (W) (dB) (%) (Ω) Pulsed; δ = 1 : 8 880 to 915 4.8 ≤3.5 3 ≥30 typ. 45 50 1996 May 29 2, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VS DC supply voltage − 7 V VC DC control voltage − 4 V PD input drive power − 10 mW PL load power − 3.5 W Tstg storage temperature −40 +100 °C Tmb operating mounting base temperature −30 +100 °C

CHARACTERISTICS

ZS = ZL = 50 Ω; PD = 3 mW; VS = 4.8 V; VC ≤ 3.5 V; f = 880 to 915 MHz; Tmb = 25 °C; δ = 1 : 8; tp = 575 µs; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IQ leakage current VC = 0.5 V − − 100 µA IC control current adjust VC for PL = 3 W − − 500 µA PL load power VC = 3.5V3− − W Gp power gain adjust VC for PL = 3 W 30 − − dB η efficiency adjust VC for PL = 3 W − 45 − % H2 second harmonic adjust VC for PL = 3 W − − −40 dBc H3 third harmonic adjust VC for PL = 3 W − − −40 dBc VSWRin input VSWR adjust VC for PL = 3 W − − 3 : 1 stability PD = 1.5 to 6 mW; VS = 4 to 6.5 V; − − −60 dBc VC = 0 to 3.5 V; PL ≤ 3 W; VSWR ≤ 6 : 1 through all phases; isolation VC = 0.5 V − − −36 dBm control bandwidth 1 − − MHz Pn noise power PL = 3 W; bandwidth = 30 kHz; − − −85 dBm 20 MHz above transmission band ruggedness VS = 6.5 V; adjust VC for PL = 3 W; no degradation VSWR ≤ 10 : 1 through all phases; 1996 May 29 3, MGD352 MGD353 50 40 handbook, halfpage

P

PLL(dBm) (dBm) 880 MHz 915 MHz 20 915 MHz -10 880 MHz -30 −10 1.2 1.6 2.0 2.4 2.8 3.2 3.6 −25 −20 −15 −10 −505VC (V) PD (dBm) ZS = ZL = 50 Ω; VS = 4.8 V; PD = 3 mW; ZS = ZL = 50 Ω; VS = 4.8 V; adjust VC for PL = 3 W; Tmb = 25 °C; δ = 1 : 8; tp = 575 µs. Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.

Fig.2 Load power as a function of control voltage; Fig.3 Load power as a function of drive power;

typical values. typical values. MGD354 MGD355 handbook, halfpage 50 Output AM η (%) (%) 915 MHz 8 40 880 MHz 6 30 4 20 880 MHz 915 MHz 2 1000010 20 30 4001234PL (dBm) P L (W) ZS = ZL = 50 Ω; VS = 4.8 V; PD = 3 mW; Tmb = 25 °C; ZS = ZL = 50 Ω; VS = 4.8 V; PD = 3 mW; input amplitude modulation = 3%; δ = 1 : 8; tp = 575 µs. Tmb = 25 °C; δ = 1 : 8; tp = 575 µs

Fig.4 Output amplitude modulation as a Fig.5 Efficiency as a function of load power;

function of load power; typical values. typical values. 1996 May 29 4, MGD356 MGD357 handbook, halfpage handbook, h4alfpage PL VC (W) (V) 0 0 880 890 900 910 920 880 890 900 910 920 f (MHz) f (MHz) ZS = ZL = 50 Ω; VS = 4.8 V; PD = 3 mW; VC = 3.5 V; ZS = ZL = 50 Ω; VS = 4.8 V; PD = 3 mW; PL = 3 W; Tmb = 25 °C; δ = 1 : 8; tp = 575 µs. Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.

Fig.6 Load power as a function of frequency; Fig.7 Control voltage as a function of

typical values. frequency; typical values. MGD358 MGD359 −30 4 handbook, halfpage

V

H C 2, H3 (V) (dBc) −40 915 MHz 880 MHz H3 −50 H2 −60 0 880 890 900 910 920 −40 0 40 o 80 f (MHz) Tmb ( C) ZS = ZL = 50 Ω; VS = 4.8 V; PD = 3 mW; PL = 3 W; ZS = ZL = 50 Ω; VS = 4.8 V; PD = 3 mW; PL = 3 W; Tmb = 25 °C; δ = 1 : 8; tp = 575 µs. δ = 1 : 8; tp = 575 µs.

Fig.8 Harmonics as a function of Fig.9 Control voltage as a function of mounting

frequency; typical values. base temperature; typical values. 1996 May 29 5, MGD360 MGD36155handbook, halfpage handbook, halfpage PL PL (W) (W) 4 4 880 MHz 880 MHz 915 MHz33915 MHz221100−20 0 20 40 60 80 −20 0 20 40 60 80Toomb ( C) Tmb ( C) ZS = ZL = 50 Ω; VS = 4.3 V; PD = 3 mW; VC = 3.5 V; ZS = ZL = 50 Ω; VS = 4.8 V; PD = 3 mW; VC = 3.5 V; δ = 1 : 8; tp = 575 µs. δ = 1 : 8; tp = 575 µs.

Fig.10 Load power as a function of mounting Fig.11 Load power as a function of mounting

base temperature; typical values. base temperature; typical values. MGD362 handbook, halfpage Gp (dB) PL = 25 dBm 15 dBm 34.8 dBm0123f(MHz) ZS = ZL = 50 Ω; VS = 4.8 V; PD = 3 mW; f = 900 MHz; C1 = 0; R1 = 100 Ω; Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.

Fig.12 Control loop power gain as a function of

frequency on the control pin; typical values. 1996 May 29 6, handbook, full pagewidth C2 C1 L1 Z1 C3 Z2 R1 C4 typ. 1.35A RF input VC MGD432 VS RF output Fig.13 Test circuit. handbook, full pagewidth123450 Ω 50 Ω input output VC VS MBH435 Dimensions in mm. Fig.14 Printed-circuit board layout. 1996 May 29 7, List of components (See Fig 13) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C2 multilayer ceramic chip capacitor 680 pF 2222 851 11681 C3 tantalum capacitor 2.2 µF; 35 V − C4 electrolytic capacitor 47 µF; 40 V 2222 030 37479 L1 Grade 4S2 Ferroxcube bead 4330 030 36300 Z1, Z2 stripline; note 1 50 Ω width 2.33 mm − R1 metal film resistor 100 Ω; 0.6 W 2322 156 11001 Note 1. The striplines are on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (εr = 2.2); thickness 1⁄32 inch. 1996 May 29 8,

SOLDERING

The indicated temperatures are those at the solder interfaces. MLB740300 handbook, halfpage Advised solder types are types with a liquidus less than or

T

equal to 210 °C. mb ( o C) Solder dots or solder prints must be large enough to wet the contact areas. 200 Footprints for soldering should cover the module contact area +0.1 mm on all sides. Soldering can be carried out using a conveyor oven, a hot 100 air oven, an infrared oven or a combination of these ovens. Hand soldering must be avoided because the soldering iron tip can exceed the maximum permitted temperature of 250 °C and damage the module. 0 0 100 200 300 t (s) 400 The maximum temperature profile and soldering time is indicated as follows (see Fig.15): t = 350 s at 100 °C Fig.15 Maximum allowable temperature profile. t = 300 s at 125 °C t = 200 s at 150 °C t = 100 s at 175 °C t = 50 s at 200 °C t = 5 s at 250 °C (maximum temperature). Cleaning The following fluids may be used for cleaning: • Alcohol • Bio-Act (Terpene Hydrocarbon) • Triclean B/S • Acetone. Ultrasonic cleaning should not be used since this can cause serious damage to the product. 1996 May 29 9, PACKAGE OUTLINE handbook, full pagewidth 17.3 16.9 0.2 17.1 max 16.7 2.2 1.8 0.15 7.7 7.3 12.2 11.8 0.7 0.3 3.45 3.0512340.30 0.20 0.56 (4×) 0.46 0.25 M 2.3 1.9 5.08 5.08 2.54 (4×) MSA485 Dimensions in mm. Fig.16 SOT388A. 1996 May 29 10,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 29 11]
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