Download: DISCRETE SEMICONDUCTORS DATA SHEET BGY143 VHF power amplifier module Product specification 1996 May 21 Supersedes data of June 1993 File under Discrete Semiconductors, SC09

DISCRETE SEMICONDUCTORS

DATA SHEET BGY143 VHF power amplifier module

Product specification 1996 May 21 Supersedes data of June 1993 File under Discrete Semiconductors, SC09, FEATURES PINNING - SOT132B • 12.5 V nominal supply voltage PIN DESCRIPTION • 13 W output power. 1 RF input 2 ground APPLICATIONS 3 VS1 • Mobile communication equipment operating directly 4 ground from 12 V vehicle electrical systems. 5 VS2 6 ground DESCRIPTION 7 RF output The BGY143 is a two-stage broadband RF amplifier Flange ground module in a SOT132B package. The module consists of two NPN transistor dies together with lumped-element matching components. handbook, halfpage1234567Top view MSB029 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C. MODE OF f VS1; VS2 PD PL η ZS; ZL OPERATION (MHz) (V) (mW) (W) (%) (Ω) CW 146 to 174 12.5 150 ≥13 typ. 48 50

WARNING

Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO inserts are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1996 May 21 2, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VS1 DC supply voltage − 15.6 V VS2 DC supply voltage − 15.6 V Vi RF input voltage − 25 V Vo RF output voltage − 25 V PD input drive power − 300 mW PL load power − 18 W Tstg storage temperature −40 +100 °C Th heatsink operating temperature −20 +90 °C MRC257 handbook, halfpage

PL

(W) –50 0 50 Th (°C) VS1 = VS2 ≤ 12.5 V; VSWR = 1. Fig.2 Load power derating curve. 1996 May 21 3,

CHARACTERISTICS

ZS = ZL = 50 Ω; PD = 150 mW; VS1 = VS2 = 12.5 V; Th = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT f frequency 146 − 174 MHz IQ2 leakage current VS1 = 0; PD = 0 − − 10 mA PL load power 13 − − W η efficiency adjust PD for PL = 13 W 40 48 − % H2 second harmonic adjust PD for PL = 13 W − −34 −25 dBc H3 third harmonic adjust PD for PL = 13 W − −34 −25 dBc VSWRin input VSWR adjust PD for PL = 13 W − 1.5 3 stability VS1 = VS2 = 10.8 to 15.6 V; − − −60 dBc PL = 1 to 15 W; VSWR = 3 : 1 ruggedness PD ≤ 300 mW; VS1 = VS2 = 15.6 V duration 5 s; no degradation PL < 18 W; VSWR = 50 : 1 MRC255 MRC258 20 20 handbook, halfpagePf= 161 MHz handbook, halfpage L PL (W) (W) 146 MHz 16 146 MHz 16 174 MHz 12 12 174 MHz8844000100 200 300 PD (mW) –25 0 25 50 75 100 Tmb (°C) VS1 = VS2 = 12.5 V. PD = 150 mW; VS1 = VS2 = 12.5 V. Fig.3 Load power as a function of drive power; Fig.4 Load power as a function of mounting base typical values. temperature; typical values. 1996 May 21 4, MRC253 MRC256 handbook, halfpage handbook, 2h0alfpage

PL

η (W) (%) 16 VS = 12.5 V 12 10.8V00140 150 160 170 180 140 150 160 170 180 f (MHz) f (MHz) VS1 = VS2 = 12.5 V; PL = 13 W. PD = 150 mW. Fig.5 Efficiency as a function of frequency; Fig.6 Load power as a function of frequency; typical values. typical values. MRC254 handbook, h0alfpage H2, H3 (dBc) –20 –40 H2 –60 H3 –80 140 150 160 170 180 f (MHz) VS1 = VS2 = 12.5 V; PL = 13 W. Fig.7 Harmonics as functions of frequency; typical values. 1996 May 21 5, handbook, full pagewidth pin numbers1234567C1 C5 C2 C6 L1 L2 Z1 Z2 C3 C7 C4 C8 IS1 = IS2 = typ. 0.5 A typ. 1.7 A MRC279 input VS1 VS2 output Fig.8 Test circuit. handbook, full pagewidth MLB068 Dimensions in mm. Fig.9 Printed-circuit board layout. 1996 May 21 6, List of components used in test circuit (see Fig.8) COMPONENT DESCRIPTION VALUE CATALOGUE NO C1, C5 multilayer chip capacitor 1 nF 4822 590 06614 C2, C6 tantalum capacitor 6.8 µF, 35 V 2022 001 00067 C3, C7 multilayer chip capacitor 10 nF 2222 852 47103 C4, C8 multilayer chip capacitor 100 nF 2222 852 47104 L1, L2 1 turn 0.5 mm copper wire on ferrite coil 1 µH 3122 108 20153 Z1, Z2 stripline; note 1 50 Ω Note 1. The striplines are on a double copper-clad printed-circuit board, with epoxy dielectric (ε 1r = 4.7), thickness ⁄16 inch. 1996 May 21 7, PACKAGE OUTLINE 52.5 50.0 44.9 17.0 14.4 9.3 8.1 3.7 6.8 4.2 0.25 7.65 max123456719.7 3.3 61.0 A 8.5 17.0 3.5 0.5 0.2MA52.5 67.5 MBC876 Dimensions in mm. Fig.10 SOT132B. 1996 May 21 8,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 21 9]

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