Download: DISCRETE SEMICONDUCTORS DATA SHEET BGY122A; BGY122B UHF amplifier modules Preliminary specification 1996 Apr 26 File under Discrete Semiconductors, SC09

DISCRETE SEMICONDUCTORS DATA SHEET BGY122A; BGY122B UHF amplifier modules Preliminary specification 1996 Apr 26 File under Discrete Semiconductors, SC09 FEATURES PINNING - SOT388A • Single 4.8 V nominal supply voltage PIN DESCRIPTION • 1.2 W output power 1 RF input • Easy control of output power by DC voltage 2 VC • Very high efficiency (typ. 55%) 3 VS • Silicon bipolar technology 4 RF output • Standby current less than 100 µA. Flange ground APPLICATIONS • Hand-held transmitting equipment operating in the 824 to 849 MHz and 872 to 905 MHz frequency ranges. DESCRIPTION The BGY122A and BGY122B a...
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DISCRETE SEMICONDUCTORS

DATA SHEET BGY122A; BGY122B UHF amplifier modules

Preliminary specification 1996 Apr 26 File under Discrete Semiconductors, SC09, FEATURES PINNING - SOT388A • Single 4.8 V nominal supply voltage PIN DESCRIPTION • 1.2 W output power 1 RF input • Easy control of output power by DC voltage 2 VC • Very high efficiency (typ. 55%) 3 VS • Silicon bipolar technology 4 RF output • Standby current less than 100 µA. Flange ground

APPLICATIONS

• Hand-held transmitting equipment operating in the 824 to 849 MHz and 872 to 905 MHz frequency ranges.

DESCRIPTION

The BGY122A and BGY122B are three-stage UHF amplifier modules in a SOT388A package. Each module1234consists of three NPN silicon planar transistor chips Top view MSA486 mounted together with matching and bias circuit components on a metallized ceramic substrate. The modules produce an output power of 1.2 W into a load of Fig.1 Simplified outline. 50 Ω with an RF drive power of 2 mW. QUICK REFERENCE DATA RF performance at Tmb = 25 °C. MODE OFfVPGηZ; Z TYPESLpSLOPERATION (MHz) (V) (W) (dB) (%) (Ω) BGY122A CW 824 to 849 4.8 1.2 ≥27.8 typ. 55 50 BGY122B CW 872 to 905 4.8 1.2 ≥27.8 typ. 55 50 1996 Apr 26 2, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VS DC supply voltage − 7 V VC DC control voltage − 3.5 V PD input drive power − 5 mW PL load power − 1.6 W Tstg storage temperature range −40 +100 °C Tmb operating mounting base temperature −30 +100 °C

CHARACTERISTICS

ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; VC ≤ 3 V; Tmb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT f frequency BGY122A 824 − 849 MHz BGY122B 872 − 905 MHz IQ total quiescent current VC = 0; PD < −60 dBm − − 100 µA IC control current adjust VC for PL = 1.2 W − − 500 µA PL load power VC = 3 V 1.2 − − W Gp power gain adjust VC for PL = 1.2 W 27.8 − − dB η efficiency adjust VC for PL = 1.2 W 50 55 − % H2 second harmonic adjust VC for PL = 1.2 W − − −36 dBc H3 third harmonic adjust VC for PL = 1.2 W − − −36 dBc VSWRin input VSWR adjust VC for PL = 1.2 W − − 3 : 1 stability PD = 0 to +6 dBm; VS = 4 to 6.5 V; − − −60 dBc VC = 0 to 3 V; PL ≤ 1.2 W; VSWR ≤ 6 : 1 through all phases isolation VC = 0 − −40 − dBm Pn noise power adjust VC for PL = 1.2 W; − − −90 dBm bandwidth = 30 kHz; fn = fo + 45 MHz ruggedness VS = 6.5 V; adjust VC for PL = 1.4 W; no degradation VSWR ≤ 10 : 1 through all phases 1996 Apr 26 3, MGD348 MGD445 handbook2, .h0alfpage PL η (W) (%) 1.6 60 849 MHz 1.2 824 MHz 849 MHz 824 MHz 0.8 0.4000123400.4 0.8 1.2 1.6 2.0 VC (V) PL (W) ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; Tmb = 25 °C. Fig.2 Load power as a function of control voltage; Fig.3 Efficiency as a function of load power; BGY122A; typical values. BGY122A; typical values. MGD446 MGD447 2.0 2.0 handbook, halfpage handbook, halfpage PL PL (W) (W) V = 4.8 V 849 MHz1.6 S 1.6 824 MHz 1.2 1.24 V 0.8 0.8 0.4 0.400820 830 840 850 860 −40 0 40 80 120 f (MHz) T (omb C) ZS = ZL = 50 Ω; PD = 2 mW; VC = 3 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; VC = 3 V. Fig.4 Load power as a function of frequency; Fig.5 Load power as a function of mounting base BGY122A; typical values. temperature; BGY122A; typical values. 1996 Apr 26 4, MGD438 MGD350 4 3.0 handbook, halfpage 40handbook, halfpage VC VSWR (V) in PL (dBm) 3 2.5 VC 849 MHz 2 2.0 824 MHz VSWRin011.5 0 1.0 −20 820 830 840 850 860 −30 −20 −10 0 10 f (MHz) PD (dBm) ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; PL = 1.2 W; Tmb = 25 °C. ZS = ZL = 50 Ω; VS = 4.8 V; VC = 3 V; Tmb = 25 °C. Fig.6 Control voltage and input VSWR as functions Fig.7 Load power as a function of drive power; of frequency; BGY122A; typical values. BGY122A; typical values. MGD439 −30 H2, H3 (dBc) −40 H3 H2 −50 −60 820 830 840 850 860 f (MHz) ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; PL = 1.2 W; Tmb = 25 °C. Fig.8 Harmonics as a function of frequency; BGY122A; typical values. 1996 Apr 26 5, MGD349 MGD442 2.0 80 handbook, halfpage PL η (W) (%) 1.6 905 MHz 1.2 872 MHz 872 MHz 905 MHz 0.8 0.4000123400.4 0.8 1.2 1.6 2.0 VC (V) PL (W) ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD =2 mW; VS = 4.8 V; Tmb = 25 °C. Fig.9 Load power as a function of control voltage; Fig.10 Efficiency as a function of load power; BGY122B; typical values. BGY122B; typical values. MGD443 MGD444 2.0 handbook, halfpage 2.0handbook, halfpage PL PL (W) (W) 1.6 V = 4.8 V 1.6 872 MHzS 905 MHz 1.2 1.24V0.8 0.8 0.4 0.400850 870 890 910 930 −40 0 40 80 120 f (MHz) Tmb ( oC) ZS = ZL = 50 Ω; PD = 2 mW; VC = 3 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; VC = 3 V. Fig.11 Load power as a function of frequency; Fig.12 Load power as a function of mounting base BGY122B; typical values. temperature; BGY122B; typical values. 1996 Apr 26 6, MGD440 MGD351 4 3.0 handbook, halfpage 40handbook, halfpage VC VSWR (V) in PL (dBm) 3 2.5 VC 905 MHz 2 2.0 872 MHz VSWRin 1 1.5 0 1.0 −20 850 870 890 910 930 −30 −20 −10 0 10 f (MHz) PD (dBm) ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; PL = 1.2 W; Tmb = 25 °C. ZS = ZL = 50 Ω; VS = 4.8 V; VC = 3 V; Tmb = 25 °C. Fig.13 Control voltage and input VSWR as functions Fig.14 Load power as a function of drive power; of frequency; BGY122B; typical values. BGY122B; typical values. MGD441 −30 H2, H3 (dBc) −40 H2 H3 −50 −60 850 870 890 910 930 f (MHz) ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; PL = 1.2 W; Tmb = 25 °C. Fig.15 Harmonics as a function of frequency; BGY122B; typical values. 1996 Apr 26 7, handbook, full pagewidth pin numbers1234L1 L2 Z1 C1 C4 Z2 C2 C6 C3 C5 RF input VC MSA914 VS RF output Fig.16 Test circuit. handbook, full pagewidth123450 Ω 50 Ω input output VC VS MBH435 Dimensions in mm. Fig.17 Printed-circuit board test-fixture. 1996 Apr 26 8, List of components (See Figs 16 and 17) COMPONENT DESCRIPTION VALUE CATALOGUE NO. C1, C4 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C2, C5 tantalum capacitor 35 V; 2.2 µF − C3, C6 multilayer ceramic chip capacitor 33 pF 2222 851 13339 L1, L2 Grade 4S2 Ferroxcube chip bead 4330 030 36300 Z1, Z2 stripline; note 1 50 Ω − Note 1. The striplines are on a double copper-clad PCB with PTFE fibreglass dielectric (ε 1r = 2.2); thickness ⁄32 inch. 1996 Apr 26 9,

SOLDERING

The indicated temperatures are those at the solder interfaces. MLB740 handbook, halfpage Advised solder types are types with a liquidus less than or equal to 210 °C. Tmb ( o C) Solder dots or solder prints must be large enough to wet the contact areas. 200 Footprints for soldering should cover the module contact area +0.1 mm on all sides. Soldering can be carried out using a conveyor oven, a hot air oven, an infrared oven or a combination of these ovens. 100 Hand soldering must be avoided because the soldering iron tip can exceed the maximum permitted temperature of 250 °C and damage the module. The maximum temperature profile and soldering time is 0 100 200 300 t (s) 400 indicated as follows (see Fig.18): t = 350 s at 100 °C t = 300 s at 125 °C t = 200 s at 150 °C t = 100 s at 175 °C Fig.18 Maximum allowable temperature profile. t = 50 s at 200 °C t = 5 s at 250 °C (maximum temperature). Cleaning The following fluids may be used for cleaning: • Alcohol • Bio-Act (Terpene Hydrocarbon) • Triclean B/S • Acetone. Ultrasonic cleaning should not be used since this can cause serious damage to the product. 1996 Apr 26 10, PACKAGE OUTLINE handbook, full pagewidth 17.3 16.9 0.2 17.1 max 16.7 2.2 1.8 0.15 7.7 7.3 12.2 11.8 0.7 0.3 3.45 3.0512340.30 0.20 0.56 (4×) 0.46 0.25 M 2.3 1.9 5.08 5.08 2.54 (4×) MSA485 Dimensions in mm. Fig.19 SOT388A. 1996 Apr 26 11,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Apr 26 12,

NOTES

1996 Apr 26 13,

NOTES

1996 Apr 26 14,

NOTES

1996 Apr 26 15,

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DISCRETE SEMICONDUCTORS DATA SHEET BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 field-effect transistors BF545A; BF545B; BF545C FEATURES • Low leakage level (typ. 50
DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BF470; BF472 PNP high-voltage transistors Product specification 1996 Dec 09 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 FEATURES • Low feedback capacitance. handbook, halfpage APPLICATIONS 2 • Class-B video outpu
DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BF469; BF471 NPN high-voltage transistors Product specification 1996 Dec 09 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 FEATURES • Low feedback capacitance. handbook, halfpage APPLICATIONS 2 • Intended for class-
DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF421; BF423 PNP high-voltage transistors Product specification 1996 Dec 09 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 FEATURES PINNING • Low feedback capacitance. PIN DESCRIPTION 1 base APPLICATIONS 2 collector
DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET BF246A; BF246B; BF246C; BF247A; BF247B; BF247C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 FEATURES PINNING • Interchangeability of drain and source con