Download: DISCRETE SEMICONDUCTORS DATA SHEET BGY113A; BGY113B UHF amplifier modules Preliminary specification 1996 May 29 Supersedes data of April 1994 File under Discrete Semiconductors, SC09

DISCRETE SEMICONDUCTORS DATA SHEET BGY113A; BGY113B UHF amplifier modules Preliminary specification 1996 May 29 Supersedes data of April 1994 File under Discrete Semiconductors, SC09 FEATURES PINNING - SOT288D • 7.5 V nominal supply voltage PIN DESCRIPTION • 7 W output power 1 RF input • Easy control of output power by DC voltage. 2 VS1 3 VC APPLICATIONS 4 VS2 • Hand-held communication equipment operating in the 5 VS3 frequency bands 400 to 440 MHz and 430 to 470 MHz 6 VS4 respectively. 7 RF output Flange ground DESCRIPTION The BGY113A and BGY113B are four-stage UHF amplifier modules in a 7-le...
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DISCRETE SEMICONDUCTORS

DATA SHEET BGY113A; BGY113B UHF amplifier modules

Preliminary specification 1996 May 29 Supersedes data of April 1994 File under Discrete Semiconductors, SC09, FEATURES PINNING - SOT288D • 7.5 V nominal supply voltage PIN DESCRIPTION • 7 W output power 1 RF input • Easy control of output power by DC voltage. 2 VS1 3 VC APPLICATIONS 4 VS2 • Hand-held communication equipment operating in the 5 VS3 frequency bands 400 to 440 MHz and 430 to 470 MHz 6 VS4 respectively. 7 RF output Flange ground

DESCRIPTION

The BGY113A and BGY113B are four-stage UHF amplifier modules in a 7-lead SOT288D package. The handbook, halfpage modules consist of four NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic substrate. The modules produce an output power of7Winto a load of 50 Ω with an RF drive power of 1 mW. 1234567Front view MSB043 - 1 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Tmb = 25 °C. MODE OFfVPGηZ; Z TYPE NUMBERSLpSLOPERATION (MHz) (V) (W) (dB) (%) (Ω) BGY113A CW 400 to 440 7.5 ≥7 ≥38.5 ≥40 50 BGY113B CW 430 to 470 7.5 ≥7 ≥38.5 ≥40 50

WARNING

Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1996 May 29 2, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VS1 DC supply voltage − 9 V VS2 DC supply voltage − 9 V VS3 DC supply voltage − 9 V VS4 DC supply voltage − 9 V VC DC control voltage − 7.5 V PD input drive power − 5 mW PL load power − 9 W Tstg storage temperature −40 +100 °C Tmb operating mounting base temperature −30 +90 °C

CHARACTERISTICS

ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = VS4 = 7.5 V; VC ≤ 7.5 V; Tmb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT f frequency BGY113A 400 − 440 MHz BGY113B 430 − 470 MHz IQ3 + IQ4 total leakage current VS1 = VS2 = VC = 0; PD = 0 − − 0.2 mA PL load power VC = 7.5V7− − W Gp power gain adjust VC for PL = 7 W 38.5 − − dB η efficiency adjust VC for PL = 7 W 40 45 − % H2 second harmonic adjust VC for PL = 7 W − − −40 dBc H3 third harmonic adjust VC for PL = 7 W − − −40 dBc VSWRin input VSWR adjust VC for PL = 7 W − − 2 : 1 control range VC = 0 to 7.5 V; PD = 1 mW 10 − − dB stability PD = 0.5 to 2 mW; − − −60 dBc VS1 = VS2 = VS3 = VS4 = 5 to 9 V; adjust VC for PL ≤ 9 W; VSWR ≤ 6 : 1 through all phases ruggedness VS1 = VS2 = VS3 = VS4 = 9 V; no degradation adjust VC for PL = 9 W; VSWR ≤ 10 : 1 through all phases 1996 May 29 3, MGD496 MGD497 10 60 handbook, halfpage handbook, halfpage

PL

(W) 400 MHz η (%) 440 MHz0002468380 400 420 440 460 VC (V) f (MHz) ZS = ZL = 50 Ω; PD = 1 mW; VS = 7.5 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 1 mW; VS = 7.5 V; PL = 7 W; Tmb = 25 °C. Fig.2 Load power as a function of control voltage; Fig.3 Efficiency as a function of frequency; BGY113A; typical values. BGY113A; typical values. MGD498 MGD499 10 5 3.0 handbook, halfpage handbook, halfpage PL VC (W) VSWR(V) in 4 2.5

VC

3 2.0 2 1.5 2 VSWRin011.0 380 400 420 440 460 380 400 420 440 460 f (MHz) f (MHz) ZS = ZL = 50 Ω; PD = 1 mW; VC = 7.5 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 1 mW; VS = 7.5 V; PL = 7 W; Tmb = 25 °C. Fig.4 Load power as a function of frequency; Fig.5 Control voltage and input VSWR as functions BGY113A; typical values. of frequency; BGY113A; typical values. 1996 May 29 4, MGD500 −10 H2, H3 (dBc) −30 H2 −50 H3 −70 380 400 420 440 460 f (MHz) ZS = ZL = 50 Ω; PD = 1 mW; VS = 7.5 V; PL = 7 W; Tmb = 25 °C. Fig.6 Harmonics as a function of frequency; BGY113A; typical values. 1996 May 29 5, MGD501 MGD502 10 60 handbook, halfpage handbook, halfpage

PL

(W) η (%) 8 430 MHz 470 MHz 400002468410 430 450 470 490 VC (V) f (MHz) ZS = ZL = 50 Ω; PD = 1 mW; VS = 7.5 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 1 mW; VS = 7.5 V; PL = 7 W; Tmb = 25 °C. Fig.7 Load power as a function of control voltage; Fig.8 Efficiency as a function of frequency; BGY113B; typical values. BGY113B; typical values. MGD503 MGD504 10 6 3.0 handbook, halfpage handbook, halfpage PL VC (W) VSWR(V) in 5 2.5 4 2.0

V

4C31.5 2 VSWRin021.0 410 430 450 470 490 410 430 450 470 490 f (MHz) f (MHz) ZS = ZL = 50 Ω; PD = 1 mW; VC = 7.5 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 1 mW; VS = 7.5 V; PL = 7 W; Tmb = 25 °C. Fig.9 Load power as a function of frequency; Fig.10 Control voltage and input VSWR as functions BGY113B; typical values. of frequency; BGY113B; typical values. 1996 May 29 6, MGD505 −10 H2, H3 (dBc) −30 H2 −50 H3 −70 410 430 450 470 490 f (MHz) ZS = ZL = 50 Ω; PD = 1 mW; VS = 7.5 V; PL = 7 W; Tmb = 25 °C. Fig.11 Harmonics as a function of frequency; BGY113B; typical values. 1234567R1 L1 R2 L2 R3 L3 R4 L4 R5 L5 Z1 Z2 C6 C7 C8 C9 C10 C1 C2 C3 C4 C5 MBD677 RF VS1 VC VS2 VS3 VS4 RF input output Fig.12 Test circuit. 1996 May 29 7, handbook, full pagewidth17R1 R2 L3 R3 R4 R5 L1 L2 L4 L5 C6 C7 C8 C9 C10 + + + C1 + C3 C4 + C2 C5 MBD67823456Dimensions in mm. Fig.13 Printed-circuit board component layout. List of components (see Figs 12 and 13) COMPONENT DESCRIPTION VALUE CATALOGUE NO. C1, C2, C3, C4, C5 electrolytic capacitor 1 µF; 63 V 2222 085 68108 C6, C7, C8, C9, C10 multilayer ceramic chip capacitor; 18 nF 2222 910 16739 X7R, 0805 L1, L2, L3, L4, L5 Grade 4S2 Ferroxcube bead 4330 030 36300 R1, R2, R3, R4, R5 metal film resistor 10 Ω; 0.4 W 2322 195 13109 Z1, Z2 stripline; note 1 50 Ω − Note 1. The striplines are on a double copper-clad printed-circuit board with epoxy dielectric (εr = 4.7); thickness = 1⁄16 inch. 1996 May 29 8, MOUNTING RECOMMENDATIONS The module should be mounted to the heatsink using 3 mm bolts with flat washers. The bolts should first be To ensure a good thermal contact and to prevent tightened to “finger tight” and then further tightened in mechanical stresses when bolted down, the flatness of the alternating steps to a maximum torque of 0.4 to 0.6 Nm. mounting base is designed to be typically better than 0.1 mm. The mounting area of the heatsink should be flat Once mounted on the heatsink, the module leads can be and free from burrs and loose particles. The heatsink soldered to the printed-circuit board. A soldering iron may should be rigid and not prone to bowing under thermal be used up to a temperature of 250 °C for a maximum of cycling conditions. The thickness of a solid heatsink 10 seconds at a distance of 2 mm from the plastic cap. should be not less than 5 mm to ensure a rigid assembly. ESD precautions must be taken to protect the device from A thin, even layer of thermal compound should be used electro-static damage. between the mounting base and the heatsink to achieve the best possible contact thermal resistance. Excessive use of thermal compound will result in an increase in thermal resistance and possible bowing of the mounting-base; too little will also result in poor thermal conduction. 1996 May 29 9, PACKAGE OUTLINE handbook, full pagewidth 6.7 2.55 6.2 2.45 0.1 CONCAVE B 45.3 max M 42.0 0.2 B 41.8 0.2 C 0.2MB35.3 max C 5.6 A 3.2 5.4 11.8 14 3.0 max max 7.6 7.412345670.56 (7×) 0.46 (7×) 0.3 0.25 M 0.3 A (7×)0.2 (7×) 14.98 14.78 2.54 5.08 5.08 5.08 3.3 (7×) 3.1 MSA211 (3×) Dimensions in mm. Fig.14 SOT288D. 1996 May 29 10,

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 29 11]
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GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated sensitive gate triacs SYMBOL PARAMETER MAX. MAX. MAX. UNIT in a full pack, plastic envelope, intended for use in general purpose BT136F- 500E 600E 800E bidirectional switching and phase VDRM Repetitive peak off-state 500 600 800 V control app
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GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT triacs in a full pack plastic envelope, intended for use in general purpose BT136F- 500D 600D bidirectional switching and phase VDRM Repetitive peak off-state voltages 500 600 V control applicat
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a full pack SYMBOL PARAMETER MAX. MAX. MAX. UNIT plastic envelope, intended for use in applications requiring high BT136F- 500 600 800 bidirectional transient and blocking BT136F- 500F 600F 800F voltage capability and high thermal B