Download: DISCRETE SEMICONDUCTORS DATA SHEET BGY110D; BGY110E; BGY110F; BGY110G UHF amplifier modules Product specification 1996 May 06 Supersedes data of May 1992

DISCRETE SEMICONDUCTORS DATA SHEET BGY110D; BGY110E; BGY110F; BGY110G UHF amplifier modules Product specification 1996 May 06 Supersedes data of May 1992 File under Discrete Semiconductors, SC09 FEATURES PINNING - SOT246 • 7.2 V nominal supply voltage PIN DESCRIPTION • 1.7 W output power 1 RF input/VC • Easy control of output power by DC voltage. 2 VS1 3 VS2 APPLICATIONS 4 VS3 • Hand-held transmitting equipment operating in the 5 RF output 824 to 849 MHz, 872 to 905 MHz, 890 to 915 MHz and Flange ground 902 to 928 MHz frequency ranges. DESCRIPTION handbook, halfpage The BGY110D, 110E, 110F and...
Author: Perseo Cerda Shared: 8/19/19
Downloads: 87 Views: 497

Content

DISCRETE SEMICONDUCTORS

DATA SHEET BGY110D; BGY110E; BGY110F; BGY110G UHF amplifier modules

Product specification 1996 May 06 Supersedes data of May 1992 File under Discrete Semiconductors, SC09, FEATURES PINNING - SOT246 • 7.2 V nominal supply voltage PIN DESCRIPTION • 1.7 W output power 1 RF input/VC • Easy control of output power by DC voltage. 2 VS1 3 VS2 APPLICATIONS 4 VS3 • Hand-held transmitting equipment operating in the 5 RF output 824 to 849 MHz, 872 to 905 MHz, 890 to 915 MHz and Flange ground 902 to 928 MHz frequency ranges.

DESCRIPTION

handbook, halfpage The BGY110D, 110E, 110F and 110G are four-stage UHF amplifier modules in a SOT246 package. Each module consists of four NPN silicon planar transistor chips, mounted together with matching and bias circuit12345components on a metallized ceramic substrate. Front view MBC832 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Tmb = 25 °C. TYPE MODE OF f VS VC PL GP η Zs; ZL NUMBER OPERATION (MHz) (V) (V) (W) (dB) (%) (Ω) BGY110D CW 824 to 849 7.2 4.5 1.7 ≥32.3 ≥39 50 BGY110E CW 872 to 905 7.2 4.5 1.7 ≥32.3 ≥39 50 BGY110F CW 890 to 915 7.2 4.5 1.7 ≥32.3 ≥39 50 BGY110G CW 902 to 928 7.2 4.5 1.7 ≥32.3 ≥39 50 1996 May 06 2, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VS1 DC supply voltage − 10 V VS2 DC supply voltage − 10 V VS3 DC supply voltage − 10 V VC DC control voltage − 4.5 V +Vo RF output terminal voltage − 25 V PD input drive power − 3 mW PL load power − 2.25 W Tstg storage temperature −40 +100 °C Tmb mounting base temperature − 90 °C MBH287 handbook, halfpage

PL

(W) VSWR = 1:1 3:1 −20 0 20 40 60 80 100 Tmb (°C) VS1 = VS2 = VS3 = 9 V max. Fig.2 Power derating curve. 1996 May 06 3,

CHARACTERISTICS

ZS = ZL = 50 Ω; VS1 = VS2 = VS3 = 7.2 V; VC = 4.5 V; Tmb = 25 °C; unless otherwise specified.4 SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT f frequency BGY110D 824 − 849 MHz BGY110E 872 − 905 MHz BGY110F 890 − 915 MHz BGY110G 902 − 928 MHz IC2 leakage current VS1 = VC = 0 − − 100 µA IC3 leakage current VS1 = VC = 0 − − 100 µA PL load power PD = 1 mW 1.7 − − W η efficiency PL = 1.7 W 39 − − % H2 second harmonic PL = 1.7 W − − −40 dB H3 third harmonic PL = 1.7 W − − −45 dB VSWRin input VSWR PL = 1.7 W − − 2:1 ∆Gp gain control VC = 0 to 4.5 V; PD = 1 mW 30 − − dB PL output switching power VS1 = VC = 0; PD = 1 mW − − −20 dBm stability PD = 0.5 to 2 mW; − − −60 dBc VS1 = VS2 = VS3 = 6 to 9 V; VC = 0 to 4.5 V; PL ≤ 2 W; VSWR ≤ 6 : 1 Pn noise power 30 kHz bandwidth; PL = 1.7 W; − −84 −80 dBm 45 MHz above fo ruggedness PD = 1 mW; VS1 = VS2 = VS3 = 9 V; no degradation PL ≤ 1.8 W; VSWR =10 : 1 through all phases; 1996 May 06 4, MBH306 MBH303 4 60 handbook, halfpage handbook, halfpage VC η (V) (%) 810 820 830 840 850 860 810 820 830 840 850 860 f (MHz) f (MHz) ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; PL = 1.7 W; ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; PL = 1.7 W; Tmb = 25 °C. Tmb = 25 °C. Fig.3 Control voltage as a function of frequency; Fig.4 Efficiency as a function of frequency; BGY110D; typical values. BGY110D; typical values. MBH290 MBH311 2.0 −30 handbook, halfpage handbook, halfpage VSWR Hin 2 , H3 (dB) 1.8 −40 H2 1.6 H3 −50 1.4 1.2 −60 810 820 830 840 850 860 810 820 830 840 850 860 f (MHz) f (MHz) ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; PL = 1.7 W; ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; PL = 1.7 W; Tmb = 25 °C. Tmb = 25 °C. Fig.5 Input VSWR as a function of frequency; Fig.6 Harmonics as a function of frequency; BGY110D; typical values. BGY110D; typical values. 1996 May 06 5, MBH299 MBH29233handbook, halfpage handbook, halfpage PL PL (W) (W) 824 MHz 824 MHz22849 MHz 849 MHz11012345020 40 60 80 100 VC (V) Tmb (°C) ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; VC = 4.5 V. Fig.7 Load power as a function of control voltage; Fig.8 Load power as a function of mounting base BGY110D; typical values. temperature; BGY110D; typical values. MBH302 MBH294 handbook,5 h0alfpage 3handbook, halfpage η (%) 849 MHz 824 MHz PL 40 (W) 000123810 820 830 840 850 860 PL (W) f (MHz) ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; VC = 4.5 V; Tmb = 25 °C. Fig.9 Efficiency as a function of load power; Fig.10 Load power as a function of frequency; BGY110D; typical values. BGY110D; typical values. 1996 May 06 6, MBH308 MBH304 4 60 handbook, halfpage handbook, halfpage VC η (V) (%) 860 880 900 920 860 880 900 920 f (MHz) f (MHz) ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; PL = 1.7 W; ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; PL = 1.7 W; Tmb = 25 °C. Tmb = 25 °C. Fig.11 Control voltage as a function of frequency; Fig.12 Efficiency as a function of frequency; BGY110E; typical values. BGY110E; typical values. MBH289 MBH310 2.0 −30 handbook, halfpage handbook, halfpage VSWR Hin 2 , H3 (dB) 1.8 −40 1.6 H2 −50 1.4 H3 1.2 −60 860 880 900 920 860 880 900 920 f (MHz) f (MHz) ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; PL = 1.7 W; ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; PL = 1.7 W; Tmb = 25 °C. Tmb = 25 °C. Fig.13 Input VSWR as a function of frequency; Fig.14 Harmonics as a function of frequency; BGY110E; typical values. BGY110E; typical values. 1996 May 06 7, MBH298 MBH29133handbook, halfpage handbook, halfpage PL PL (W) (W) 872 MHz 872 MHz22905 MHz 905 MHz11012345020 40 60 80 100 VC (V) Tmb (°C) ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; VC = 4.5 V. Fig.15 Load power as a function of control voltage; Fig.16 Load power as a function of mounting base BGY110E; typical values. temperature; BGY110E; typical values. MBH300 MBH295 handbook,5 h0alfpage 3handbook, halfpage η (%) 905 MHz 872 MHz PL 40 (W) 000123860 880 900 920 PL (W) f (MHz) ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; VC = 4.5 V; Tmb = 25 °C. Fig.17 Efficiency as a function of load power; Fig.18 Load power as a function of frequency; BGY110E; typical values. BGY110E; typical values. 1996 May 06 8, MBH307 MBH305 4 60 handbook, halfpage handbook, halfpage VC η (V) (%) 880 890 900 910 920 880 890 900 910 920 f (MHz) f (MHz) ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; PL = 1.7 W; ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; PL = 1.7 W; Tmb = 25 °C. Tmb = 25 °C. Fig.19 Control voltage as a function of frequency; Fig.20 Efficiency as a function of frequency; BGY110F; typical values. BGY110F; typical values. MBH288 MBH309 1.8 −40 handbook, halfpage handbook, halfpage VSWR H , Hin23(dB) 1.6 −50 H2 1.4 H3 −60 1.2 1.0 −70 880 890 900 910 920 880 890 900 910 920 f (MHz) f (MHz) ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; PL = 1.7 W; ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; PL = 1.7 W; Tmb = 25 °C. Tmb = 25 °C. Fig.21 Input VSWR as a function of frequency; Fig.22 Harmonics as a function of frequency; BGY110F; typical values. BGY110F; typical values. 1996 May 06 9, MBH297 MBH29333handbook, halfpage handbook, halfpage PL PL (W) (W) 890 MHz 890 MHz22915 MHz 915 MHz11012345020 40 60 80 100 VC (V) Tmb (°C) ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; VC = 4.5 V. Fig.23 Load power as a function of control voltage; Fig.24 Load power as a function of mounting base BGY110F; typical values. temperature; BGY110F; typical values. MBH301 MBH296 handbook,5 h0alfpage 3handbook, halfpage η (%) 915 MHz 890 MHz PL 40 (W) 000123880 890 900 910 920 PL (W) f (MHz) ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; VC = 4.5 V; Tmb = 25 °C. Fig.25 Efficiency as a function of load power; Fig.26 Load power as a function of frequency; BGY110F; typical values. BGY110F; typical values. 1996 May 06 10, MBB618 MBB619 handbook, h4alfpage handbook,6 h0alfpage

VC

(V) η (%) 900 910 920 f (MHz) 930 900 910 920 f (MHz) 930 ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; PL = 1.7 W; ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; PL = 1.7 W; Tmb = 25 °C. Tmb = 25 °C. Fig.27 Control voltage as a function of frequency; Fig.28 Efficiency as a function of frequency; BGY110G; typical values. BGY110G; typical values. MBB617 MBB620 handbook1, .h6alfpage −50handbook, halfpage H2, H3 VSWRin (dB) −54 1.5 H2 −58 H3 1.4 −62 1.3 −66 1.2 −70 900 910 920 f (MHz) 930 900 910 920 f (MHz) 930 ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; PL = 1.7 W; ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; PL = 1.7 W; Tmb = 25 °C. Tmb = 25 °C. Fig.29 Input VSWR as a function of frequency; Fig.30 Harmonics as a function of frequency; BGY110G; typical values. BGY110G; typical values. 1996 May 06 11, MBB616 MBB615 handbook, h3alfpage 3handbook, halfpage PL PL (W) (W) 902 MHz 902 MHz22928 MHz 928 MHz11012345020 40 60 80 100 VC (V) Tmb (°C) ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; VC = 4.5 V. Fig.31 Load power as a function of control voltage; Fig.32 Load power as a function of mounting base BGY110G; typical values. temperature; BGY110G; typical values. MBB614 MBB621 handbook6 , h0alfpage handbook, halfpage η PL (%) (W)928 MHz 902 MHz 40 2 201000123900 910 920P (W) f (MHz)

L

ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 1 mW; VS1 = VS2 = VS3 = 7.2 V; VC = 4.5 V; Tmb = 25 °C. Fig.33 Efficiency as a function of load power; Fig.34 Load power as a function of frequency; BGY110G; typical values. BGY110G; typical values. 1996 May 06 12, handbook, full pagewidth pin numbers12345C1 C4 C7 C2 C5 C8 Z1 Z2 L4 L1 L2 L3 C10 C6 C9 C11 C12 C3 RF input VC VS1 VS2 VS3 RF output MBH312 Fig.35 Test circuit. pin numbers1234550 Ω input 50 Ω output VC VS1 VS2 VS3 MBH313 Fig.36 Printed circuit board test-fixture. 1996 May 06 13, List of components (see Fig.35) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C4, C7 multilayer chip capacitor 100 nF C2, C5, C8 tantalum capacitor 2.2 µF C3, C6, C9 multilayer chip capacitor 33 pF C10, C11 multilayer chip capacitor 1 nF C12 tantalum capacitor 1 µF L1, L2, L3 RF choke, 1 turn copper wire on grade 3B core 22 µH 0.4 mm 4330 030 32221 L4 Ferroxcube coil 5 µH 3122 108 20153 Z1, Z2 stripline; note 1 50 Ω Note 1. The striplines are on double copper-clad printed circuit board with PTFE dielectric (εr = 2.2), thickness 1⁄16 inch. 1996 May 06 14, PACKAGE OUTLINE handbook, full pagewidth 10.16 2.54 45 32.5 40.8 max 3 10.16 5.08 7.33 0.5 typ 2.1 2.1 1.9 3.1 0.25 5.5 3.4 2.5 11.0 6.3 14.2 7.2 max max min MSA055 Dimensions in mm. Fig.37 SOT246. 1996 May 06 15,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 06 16]
15

Similar documents

DATA SHEET BGE885 CATV amplifier module
DISCRETE SEMICONDUCTORS DATA SHEET BGE885 CATV amplifier module Product specification 1995 Nov 09 Supersedes data of February 1995 File under Discrete Semiconductors, SC16 FEATURES PINNING - SOT115D • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input; note 1 • Rugged construction fpa
DISCRETE SEMICONDUCTORS DATA SHEET BGD802MI Hybrid CATV amplifier module Product specification 1996 Jul 15 File under Discrete Semiconductors, SC16
DISCRETE SEMICONDUCTORS DATA SHEET BGD802MI Hybrid CATV amplifier module Product specification 1996 Jul 15 File under Discrete Semiconductors, SC16 FEATURES PINNING - SOT115J2 • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 output • Excellent return loss properties 2 common • Silicon n
DISCRETE SEMICONDUCTORS DATA SHEET BGD802 Hybrid CATV amplifier module Product specification 1996 Jul 15 Supersedes data of 1996 Apr 25 File under Discrete Semiconductors, SC16
DISCRETE SEMICONDUCTORS DATA SHEET BGD802 Hybrid CATV amplifier module Product specification 1996 Jul 15 Supersedes data of 1996 Apr 25 File under Discrete Semiconductors, SC16 FEATURES PINNING - SOT115J2 • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Excellent return loss pro
DISCRETE SEMICONDUCTORS DATA SHEET BGD702MI Hybrid CATV amplifier module Product specification 1996 Jul 15 File under Discrete Semiconductors, SC16
DISCRETE SEMICONDUCTORS DATA SHEET BGD702MI Hybrid CATV amplifier module Product specification 1996 Jul 15 File under Discrete Semiconductors, SC16 FEATURES PINNING - SOT115J2 • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 output • Silicon nitride passivation 2 common • Rugged constru
DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification May 1994 File under Discrete Semiconductors, SC14 Philips Semiconductors
DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification May 1994 File under Discrete Semiconductors, SC14 Philips Semiconductors FEATURES DESCRIPTION handbook, 2 columns • 3High power gain Silicon PNP transistor in a plastic, • Gold metallization ensures SOT323
Silicon NPN Planar RF Transistor
Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features High power gain Low noise figure High transition frequency 94 9308 13623 BFR96TS Marking: BFR96TS Plastic c
Silicon NPN Planar RF Transistor
Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features High power gain Low noise figure High transition frequency 94 9308 13623 BFR91A Marking: BFR91A Plastic cas
Silicon NPN Planar RF Transistor
Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features High power gain Low noise figure High transition frequency 94 9308 13623 BFR90A Marking: BFR90A Plastic cas
Silicon NPN Planar RF Transistor
Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave fre- quencies. Features Small feedback ca
Silicon NPN Planar RF Transistor
Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain per- formance at UHF, VHF and microwave frequencies. Features Small feedback ca
DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor Product specification 1996 Jun 04 Supersedes data of September 1995 File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor Product specification 1996 Jun 04 Supersedes data of September 1995 File under Discrete Semiconductors, SC14 FEATURES PINNING - SOT343 • High power gain PIN DESCRIPTION • High efficiency 1 collector • Small size discrete power am
DISCRETE SEMICONDUCTORS DATA SHEET BF992; BF992R Silicon N-channel dual-gate MOS-FETs Product specification 1996 Jul 30 Supersedes data of April 1991 File under Discrete Semiconductors, SC07
DISCRETE SEMICONDUCTORS DATA SHEET BF992; BF992R Silicon N-channel dual-gate MOS-FETs Product specification 1996 Jul 30 Supersedes data of April 1991 File under Discrete Semiconductors, SC07 APPLICATIONS handbook, halfpage • VHF applications such as VHF television tuners and FM d4 3 tuners with 12 V
Silicon PNP Planar RF Transistor
Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation. Features High cross modulation performance Low noise High power gain High reverse attenuation 94 9308 13623 BF979 Markin
Silicon PNP Planar RF Transistor
Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF oscillator and mixer stages. Features High gain Low noise 94 9308 13623 BF970 Marking: BF970 Plastic case (TO 50) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 2
DISCRETE SEMICONDUCTORS DATA SHEET BF908; BF908R Dual-gate MOS-FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07
DISCRETE SEMICONDUCTORS DATA SHEET BF908; BF908R Dual-gate MOS-FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 FEATURES • High forward transfer admittance handbook, halfpage d • Short channel transistor with high forward transfer43admitta
DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF870; BF872 PNP high-voltage transistors Product specification 1996 Dec 09 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 FEATURES • Low feedback capacitance. handbook, halfpage APPLICATIONS • For use in class-B video output stag
DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995
DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 field-effect transistors BF556A; BF556B; BF556C FEATURES • Low leakage level (typ. 50
DISCRETE SEMICONDUCTORS DATA SHEET BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995
DISCRETE SEMICONDUCTORS DATA SHEET BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 field-effect transistors BF545A; BF545B; BF545C FEATURES • Low leakage level (typ. 50
DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BF470; BF472 PNP high-voltage transistors Product specification 1996 Dec 09 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 FEATURES • Low feedback capacitance. handbook, halfpage APPLICATIONS 2 • Class-B video outpu
DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BF469; BF471 NPN high-voltage transistors Product specification 1996 Dec 09 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 FEATURES • Low feedback capacitance. handbook, halfpage APPLICATIONS 2 • Intended for class-
DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF421; BF423 PNP high-voltage transistors Product specification 1996 Dec 09 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 FEATURES PINNING • Low feedback capacitance. PIN DESCRIPTION 1 base APPLICATIONS 2 collector
DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET BF246A; BF246B; BF246C; BF247A; BF247B; BF247C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 FEATURES PINNING • Interchangeability of drain and source con
DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995
DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 FEATURES PINNING • Interchangeability of drain and source connections PIN SYMBOL DESCRIPTION •
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a full pack plastic envelope, intended for use in general purpose BT136X- 500E 600E 800E bidirectional switching and phase VDRM Repetitive peak off-state 500 600 800 V control app
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186A PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glasspassivated, sensitive gate triacs SYMBOL PARAMETER MAX. MAX. UNIT in a full pack plastic envelope, intended for use in general purpose BT136X- 500D 600D bidirectional switching and phase VDRM Repetitive peak off-state voltages 500 600 V control applicati
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186A PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a full pack SYMBOL PARAMETER MAX. MAX. MAX. UNIT plastic envelope, intended for use in applications requiring high BT136X- 500 600 800 bidirectional transient and blocking BT136X- 500F 600F 800F voltage capability and high thermal B
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated sensitive gate triacs SYMBOL PARAMETER MAX. MAX. MAX. UNIT in a full pack, plastic envelope, intended for use in general purpose BT136F- 500E 600E 800E bidirectional switching and phase VDRM Repetitive peak off-state 500 600 800 V control app
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT triacs in a full pack plastic envelope, intended for use in general purpose BT136F- 500D 600D bidirectional switching and phase VDRM Repetitive peak off-state voltages 500 600 V control applicat
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a full pack SYMBOL PARAMETER MAX. MAX. MAX. UNIT plastic envelope, intended for use in applications requiring high BT136F- 500 600 800 bidirectional transient and blocking BT136F- 500F 600F 800F voltage capability and high thermal B
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT136- 500E 600E 800E bidirectional switching and phase VDRM Repetitive peak off-state 500 600 800 V control applications,