Download: DISCRETE SEMICONDUCTORS DATA SHEET BGD802 Hybrid CATV amplifier module Product specification 1996 Jul 15 Supersedes data of 1996 Apr 25 File under Discrete Semiconductors, SC16

DISCRETE SEMICONDUCTORS DATA SHEET BGD802 Hybrid CATV amplifier module Product specification 1996 Jul 15 Supersedes data of 1996 Apr 25 File under Discrete Semiconductors, SC16 FEATURES PINNING - SOT115J2 • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Excellent return loss properties 2 common • Silicon nitride passivation 3 common • Rugged construction 5 +VB • Gold metallization ensures excellent reliability. 7 common 8 common APPLICATIONS 9 output • CATV systems operating in the 40 to 860 MHz frequency range. handbook, halfpage DESCRIPTION Hybrid amplifier module in a S...
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DISCRETE SEMICONDUCTORS

DATA SHEET BGD802 Hybrid CATV amplifier module

Product specification 1996 Jul 15 Supersedes data of 1996 Apr 25 File under Discrete Semiconductors, SC16, FEATURES PINNING - SOT115J2 • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Excellent return loss properties 2 common • Silicon nitride passivation 3 common • Rugged construction 5 +VB • Gold metallization ensures excellent reliability. 7 common 8 common APPLICATIONS 9 output • CATV systems operating in the 40 to 860 MHz frequency range. handbook, halfpage

DESCRIPTION

Hybrid amplifier module in a SOT115J2 package operating with a voltage supply of 24 V (DC). 1235789Side view MSA319 - 1 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Gp power gain f = 50 MHz 18 19 dB f = 860 MHz 18.5 − dB Itot total current consumption (DC) VB = 24 V − 410 mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VB supply voltage − 25 V Vi RF input voltage − 65 dBmV Tstg storage temperature −40 +100 °C Tmb operating mounting base temperature −20 +100 °C 1996 Jul 15 2,

CHARACTERISTICS

Bandwidth 40 to 860 MHz; VB = 24 V; Tcase = 35 °C; ZS = ZL = 75 Ω. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Gp power gain f = 50 MHz 18 19 dB f = 860 MHz 18.5 − dB SL slope cable equivalent f = 40 to 860 MHz 0.2 2 dB FL flatness of frequency response f = 40 to 860 MHz − ±0.5 dB S11 input return losses f = 40 to 80 MHz 20 − dB f = 160 to 320 MHz 17 − dB f = 320 to 640 MHz 15.5 − dB f = 640 to 860 MHz 14 − dB S22 output return losses f = 40 to 80 MHz 20 − dB f = 160 to 320 MHz 17 − dB f = 320 to 640 MHz 15.5 − dB f = 640 to 860 MHz 14 − dB S21 phase response f = 50 MHz −45 +45 deg CTB composite triple beat 49 channels flat; − −61 dB Vo = 47 dBmV; measured at 859.25 MHz Xmod cross modulation 49 channels flat; − −61 dB Vo = 47 dBmV; measured at 55.25 MHz CSO composite second order distortion 49 channels flat; − −60 dB Vo = 47 dBmV; measured at 860.5 MHz d2 second order distortion note 1 − −69 dB Vo output voltage dim = −60 dB; note 2 61.5 − dBmV F noise figure f = 50 MHz − 5.5 dB f = 860 MHz − 9 dB Itot total current consumption (DC) note 3 − 410 mA Notes 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 805.25 MHz; Vq = 44 dBmV; measured at fp + fq = 860.5 MHz. 2. Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo −6 dB; fr = 860.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 849.25 MHz. 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 1996 Jul 15 3,

CHARACTERISTICS

Bandwidth 40 to 860 MHz; VB = 24 V; Tcase = 35 °C; ZS = ZL = 75 Ω. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Gp power gain f = 50 MHz 18 19 dB f = 860 MHz 18.5 − dB SL slope cable equivalent f = 40 to 860 MHz 0.2 2 dB FL flatness of frequency response f = 40 to 860 MHz − ±0.5 dB S11 input return losses f = 40 to 80 MHz 20 − dB f = 160 to 320 MHz 17 − dB f = 320 to 640 MHz 15.5 − dB f = 640 to 860 MHz 14 − dB S22 output return losses f = 40 to 80 MHz 20 − dB f = 160 to 320 MHz 17 − dB f = 320 to 640 MHz 15.5 − dB f = 640 to 860 MHz 14 − dB S21 phase response f = 50 MHz −45 +45 deg CTB composite triple beat 129 channels flat; − −54 dB Vo = 44 dBmV; measured at 859.25 MHz Xmod cross modulation 129 channels flat; − −59 dB Vo = 44 dBmV; measured at 55.25 MHz CSO composite second order distortion 129 channels flat; − −56 dB Vo = 44 dBmV; measured at 860.5 MHz d2 second order distortion note 1 − −69 dB Vo output voltage dim = −60 dB; note 2 61.5 − dBmV F noise figure f = 50 MHz − 5.5 dB f = 860 MHz − 9 dB Itot total current consumption (DC) note 3 − 410 mA Notes 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 805.25 MHz; Vq = 44 dBmV; measured at fp + fq = 860.5 MHz. 2. Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo −6 dB; fr = 860.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 849.25 MHz. 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 1996 Jul 15 4,

PACKAGE OUTLINE

handbook, full pagewidth 13.8 max 27.2 max 10.2 8 3.8 4.15 max 3.85 9.2 max 20.8 8.8 max min 12.712357894.2 (2) 0.25 0.51 ∅ 0.25 M 2.4 max UNC 6-32 (1) 2.54 0.38 2.54 (5.08) 25.4 MSA318 - 1 4.15 3.85 44.8 max 38.1 Dimensions in mm. (1) Screw 6-32 UNC-2A available on request. (2) Leads gold plated.

Fig.2 SOT115J2.

1996 Jul 15 5,

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jul 15 6,

NOTES

1996 Jul 15 7,

Philips Semiconductors – a worldwide company

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Pasica 5/v, 11000 BEOGRAD, Middle East: see Italy Tel. +381 11 825 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Internet: http://www.semiconductors.philips.com/ps/ Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (1) BGD802_2.mif June 26, 1996 11:51 am © Philips Electronics N.V. 1996 SCA50 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 127141/1200/02/pp8 Date of release: 1996 Jul 15 Document order number: 9397 750 00962]
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