Download: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification May 1994 File under Discrete Semiconductors, SC14 Philips Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification May 1994 File under Discrete Semiconductors, SC14 Philips Semiconductors FEATURES DESCRIPTION handbook, 2 columns • 3High power gain Silicon PNP transistor in a plastic, • Gold metallization ensures SOT323 (S-mini) package. The excellent reliability BFT92W uses the same crystal as the SOT23 version, BFT92. • SOT323 (S-mini) package. PINNING APPLICATION12It is intended as a general purpose PIN DESCRIPTION Top view MBC870 transistor for wideband applications 1 base Marking code: W1. up to 2 GHz. 2 emitt...
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DISCRETE SEMICONDUCTORS

DATA SHEET BFT92W PNP 4 GHz wideband transistor

Product specification May 1994 File under Discrete Semiconductors, SC14 Philips Semiconductors, FEATURES DESCRIPTION handbook, 2 columns • 3High power gain Silicon PNP transistor in a plastic, • Gold metallization ensures SOT323 (S-mini) package. The excellent reliability BFT92W uses the same crystal as the SOT23 version, BFT92. • SOT323 (S-mini) package.

PINNING

APPLICATION12It is intended as a general purpose PIN DESCRIPTION Top view MBC870 transistor for wideband applications 1 base Marking code: W1. up to 2 GHz. 2 emitter Fig.1 SOT323. 3 collector QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − −20 V VCEO collector-emitter voltage open base − − −15 V IC collector current (DC) − − −35 mA Ptot total power dissipation up to Ts = 93 °C; note 1 − − 300 mW hFE DC current gain IC = −15 mA; VCE = −10 V 20 50 − Cre feedback capacitance IC = 0; VCB = −10 V; f = 1 MHz − 0.5 − pF fT transition frequency IC = −15 mA; VCE = −10 V; − 4 − GHz f = 500 MHz GUM maximum unilateral power gain IC = −15 mA; VCE = −10 V; − 17 − dB f = 500 MHz; Tamb = 25 °C F noise figure IC = −5 mA; VCE = −10 V; − 2.5 − dB f = 500 MHz Tj junction temperature − − 150 °C Note 1. Ts is the temperature at the soldering point of the collector pin. May 1994 2, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −20 V VCEO collector-emitter voltage open base − −15 V VEBO emitter-base voltage open collector − −2 V IC collector current (DC) − −25 mA Ptot total power dissipation up to Ts = 93 °C; note 1 − 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-s thermal resistance from junction to soldering point up to Ts = 93 °C; note 1 190 K/W Note to the “Limiting values” and “Thermal characteristics” 1. Ts is the temperature at the soldering point of the collector pin.

CHARACTERISTICS

Tj = 25 °C (unless otherwise specified). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −10 V − − −50 nA hFE DC current gain IC = −15 mA; VCE = −10 V 20 50 − fT transition frequency IC = −15 mA; VCE = −10 V; − 4 − GHz f = 500 MHz; Tamb = 25 °C Cc collector capacitance IE = ie = 0; VCB = −10 V; − 0.65 − pF f = 1 MHz Ce emitter capacitance IC = ic = 0; VEB = −0.5 V; − 0.75 − pF f = 1 MHz Cre feedback capacitance IC = 0; VCB = −10 V; − 0.5 − pF f = 1 MHz GUM maximum unilateral power gain; IC = −15 mA; VCE = −10 V; − 17 − dB note1f= 500 MHz; Tamb = 25 °C IC = −15 mA; VCE = −10 V; − 11 − dB f = 1 GHz; Tamb = 25 °C F noise figure Γs = Γopt; IC = −5 mA; − 2.5 − dB VCE = −10 V; f = 500 MHz Γs = Γopt; IC = −5 mA; − 3 − dB VCE = −10 V; f = 1 GHz Notes21. GUM is the maximum unilateral power gain, assuming s12 is zero. GUM = 10 log- 2-1- dB. (1 – s 211 ) (1 – s 222 ) May 1994 3, MLB540 MLB541 400 60 Ptot (mW) h FE00050 100 150 200 0 10 20 30Ts( o C) I C (mA) VCE = −10 V; Tj = 25 °C. Fig.3 DC current gain as a function of collector Fig.2 Power derating curve. current, typical values. MLB542 MLB54316Cre (pF) f T 0.8 (GHz) VCE= 4 10 V 0.65V0.4 0.20004812 16 20 1 10 10 2 VC B (V) I C (mA) IC = 0; f = 1 MHz. f = 500 MHz; Tamb = 25 °C. Fig.4 Feedback capacitance as a function of Fig.5 Transition frequency as a function of collector-base voltage, typical values. collector current, typical values. May 1994 4, MLB544 MLB545 30 30 gain gain (dB) (dB) 20 MSG 20 G UM

MSG G

10 10 UM00010 20 30 0 10 20 30IC(mA) I C (mA) f = 500 MHz; VCE = −10 V. f = 1 GHz; VCE = −10 V. MSG = maximum stable gain. MSG = maximum stable gain. Fig.6 Gain as a function of collector current, Fig.7 Gain as a function of collector current, typical values. typical values. MLB546 MLB547 50 50 gain gain (dB) (dB) 40 40 G UM G UM

MSG

30 MSG 30 20 20 10 10 Gmax Gmax0010 102 103 104 10 102 103 104 f (MHz) f (MHz) IC = −5 mA; VCE = −10 V. IC = −15 mA; VCE = −10 V. MSG = maximum stable gain. MSG = maximum stable gain. Fig.8 Gain as a function of frequency, Fig.9 Gain as a function of frequency, typical values. typical values. May 1994 5, 90o 1.0 135o 45o 0.8 0.5 2 0.6 0.4 0.253GHz 0.2 0.2 0.5125180o 0 0o 0 40 MHz 0.2 5 0.5 2 135o 45o MLB548 1.0 90o VCE = −10 V; IC = −15 mA. Fig.10 Common emitter input reflection coefficient (s11), typical values. 90o 135o 45oo40 MHz1800o50 40 30 20 10 3 GHz 135o 45 o 90o MLB549 VCE = −10 V; IC = −15 mA. Fig.11 Common emitter forward transmission coefficient (s21), typical values. May 1994 6, 90o 135o 45o3GHz 0.5 0.4 0.3 0.2 0.1 180o0o40 MHz 135o 45 o 90o MLB550 VCE = −10 V; IC = −15 mA. Fig.12 Common emitter reverse transmission coefficient (s12), typical values. 90o 1.0 135o 45o 0.8 0.5 2 0.6 0.4 0.2 5 0.2 0.2 0.5125180o 0 0o 0 40 MHz 0.2 3 GHz 5 0.5 2 135o 45o MLB551 1.0 90o VCE = −10 V; IC = −15 mA. Fig.13 Common emitter output reflection coefficient (s22), typical values. May 1994 7, MLB552 MLB553 handbook, halfpage handbook, h6alfpageFF(dB) 1 GHz (dB) I C = 15 mA 4 500 MHz 4 10 mA 5 mA 2 mA2200110 102234IC(mA) 10 10 10 f (MHz) VCE = −10 V. VCE = −10 V. Fig.14 Minimum noise figure as a function of Fig.15 Minimum noise figure as a function of collector current, typical values. frequency, typical values. May 1994 8, 90o 1.0 135o 45o 0.8 0.5 2 0.6 0.4 0.2Fmin= 2.5 dB 0.2 Γopt 0.2 0.5125180o 0 0o0F= 3 dB 0.25F= 4 dB F = 5 dB 0.5 2 135o 45o MLB554 1.0 90o f = 500 MHz; VCE = −10 V; IC = −5 mA; Zo = 50 Ω. Fig.16 Common emitter noise figure circles, typical values. 90o 1.0 135o 45o 0.8 0.5 2 0.6Fmin= 3 dB 0.4 0.2 5 Γopt 0.2 0.2 0.5125180o 0 0o0F= 3.5 dB F = 4 dB 0.25F= 5 dB 0.5 2 135o 45o MLB555 1.0 90o f = 1 GHz; VCE = −10 V; IC = −5 mA; Zo = 50 Ω. Fig.17 Common emitter noise figure circles, typical values. May 1994 9, SPICE parameters for the BFT92W crystal SEQUENCE No. PARAMETER VALUE UNIT SEQUENCE No. PARAMETER VALUE UNIT 1 IS 437.5 aA 36(1) VJS 750.0 mV 2 BF 33.58 − 37(1) MJS 0.000 − 3 NF 1.009 − 38 FC 0.768 − 4 VAF 23.39 V Note 5 IKF 99.53 mA 1. These parameters have not been extracted, the 6 ISE 87.05 fA default values are shown. 7 NE 1.943 − 8 BR 4.947 − 9 NR 1.002 − handbook, halfpage Ccb 10 VAR 3.903 V 11 IKR 5.281 mA 12 ISC 35.88 fA L1LBL2 B B' C' C 13 NC 1.393 − 14 RB 5.000 Ω E'Cbe Cce 15 IRB 1.000 µA LE 16 RBM 5.000 Ω MBC964 17 RE 1.000 Ω L3 18 RC 10.00 Ω 19(1) XTB 0.000 − E 20(1) EG 1.110 eV 21(1) XTI 3.000 − QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc); 22 CJE 746.6 fF fc = scaling frequency = 1 GHz. 23 VJE 600.0 mV Fig.18 Package equivalent circuit SOT323. 24 MJE 0.357 − 25 TF 17.49 ps 26 XTF 1.354 − List of components (see Fig.18) 27 VTF 155.6 mV DESIGNATION VALUE UNIT 28 ITF 1.000 mA Cbe 2 fF 29 PTF 45.00 deg Ccb 100 fF 30 CJC 937.1 fF Cce 100 fF 31 VJC 396.4 mV L1 0.34 nH 32 MJC 0.200 − L2 0.10 nH 33 XCJC 0.106 − L3 0.34 nH 34 TR 8.422 ns LB 0.60 nH 35(1) CJS 0.000 F LE 0.60 nH May 1994 10, PACKAGE OUTLINE 1.00 handbook, full pagewidth max 0.4 0.1 0.2MA0.2MB0.2 max 0.2

A

2.2 1.35 2.0 1.15120.3 0.1 1.4 0.25 1.2 0.10 2.2

B

1.8 MBC871 Dimensions in mm. Fig.19 SOT323.

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 1994 11,

Philips Semiconductors – a worldwide company

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(01)4814 240 Tel. (0212)279 2770, Fax. (0212)269 3094 Hong Kong: PHILIPS HONG KONG Ltd., Components Div., United Kingdom: Philips Semiconductors Limited, P.O. Box 65, 6/F Philips Ind. Bldg., 24-28 Kung Yip St., KWAI CHUNG, N.T., Philips House, Torrington Place, LONDON, WC1E 7HD, Tel. (852)424 5121, Fax. (852)428 6729 Tel. (071)436 41 44, Fax. (071)323 03 42 India: Philips INDIA Ltd, Components Dept, United States: INTEGRATED CIRCUITS: Shivsagar Estate, A Block , 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Dr. Annie Besant Rd. Worli, Bombay 400 018 Tel. (800)234-7381, Fax. (708)296-8556 Tel. (022)4938 541, Fax. (022)4938 722 DISCRETE SEMICONDUCTORS: 2001 West Blue Heron Blvd., Indonesia: Philips House, Jalan H.R. Rasuna Said Kav. 3-4, P.O. Box 10330, RIVIERA BEACH, FLORIDA 33404, P.O. Box 4252, JAKARTA 12950, Tel. (800)447-3762 and (407)881-3200, Fax. (407)881-3300 Tel. (021)5201 122, Fax. (021)5205 189 Uruguay: Coronel Mora 433, MONTEVIDEO, Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. (02)70-4044, Fax. (02)92 0601 Tel. (01)640 000, Fax. (01)640 200 For all other countries apply to: Philips Semiconductors, Italy: PHILIPS COMPONENTS S.r.l., International Marketing and Sales, Building BAF-1, Viale F. Testi, 327, 20162 MILANO, P.O. Box 218, 5600 MD, EINDHOVEN, The Netherlands, Telex 35000 phtcnl, Fax. +31-40-724825 Tel. (02)6752.3302, Fax. (02)6752 3300. Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, SCD31 © Philips Electronics N.V. 1994 Tel. (03)3740 5028, Fax. (03)3740 0580 All rights are reserved. Reproduction in whole or in part is prohibited without the Korea: (Republic of) Philips House, 260-199 Itaewon-dong, prior written consent of the copyright owner. Yongsan-ku, SEOUL, Tel. (02)794-5011, Fax. (02)798-8022 The information presented in this document does not form part of any quotation Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, or contract, is believed to be accurate and reliable and may be changed without SELANGOR, Tel. (03)750 5214, Fax. (03)757 4880 notice. No liability will be accepted by the publisher for any consequence of its Mexico: Philips Components, 5900 Gateway East, Suite 200, use. Publication thereof does not convey nor imply any license under patent- or EL PASO, TX 79905, Tel. 9-5(800)234-7381, Fax. (708)296-8556 other industrial or intellectual property rights. Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB Printed in The Netherlands Tel. (040)783749, Fax. (040)788399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, 123065/1500/01/pp12 Date of release: May 1994 Tel. (09)849-4160, Fax. (09)849-7811 Document order number: 9397 731 20011

Philips Semiconductors

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GENERAL DESCRIPTION QUICK REFERENCE DATA Glasspassivated, sensitive gate triacs SYMBOL PARAMETER MAX. MAX. UNIT in a plastic envelope suitable for surface mounting, intended for use in BT134W- 500E 600E general purpose bidirectional VDRM Repetitive peak off-state voltages 500 600 V switching and pha
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT223 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glasspassivated, sensitive gate triacs SYMBOL PARAMETER MAX. MAX. UNIT in a plastic envelope suitable for surface mounting, intended for use in BT134W- 500D 600D general purpose bidirectional VDRM Repetitive peak off-state voltages 500 600 V switching and pha
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT223 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope suitable for surface mounting, intended for use in BT134W- 500 600 800 applications requiring high VDRM Repetitive peak off-state 500 600 800 V bidirectional transient and bloc