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Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features High power gain Low noise figure High transition frequency 94 9308 13623 BFR96TS Marking: BFR96TS Plastic case (TO 50) 1 = Collector, 2 = Emitter, 3 = Base Absolute Maximum Ratings Tamb = 25C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 2.5 V Collector current IC 100 mA Total power di...
Author: Perseo Cerda Shared: 8/19/19
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Silicon NPN Planar RF Transistor

Electrostatic sensitive device. Observe precautions for handling.

Applications

RF amplifier up to GHz range specially for wide band antenna amplifier.

Features

High power gain Low noise figure High transition frequency 94 9308 13623 BFR96TS Marking: BFR96TS Plastic case (TO 50) 1 = Collector, 2 = Emitter, 3 = Base

Absolute Maximum Ratings

Tamb = 25C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 2.5 V Collector current IC 100 mA Total power dissipation Tamb ≤ 45 C Ptot 700 mW Junction temperature Tj 150 C Storage temperature range Tstg –65 to +150 C

Maximum Thermal Resistance

Tamb = 25C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 RthJA 150 K/W plated with 35m Cu Rev. 5, 22-Jan-01 1 (9),

Electrical DC Characteristics

Tamb = 25C, unless otherwise specified Parameter Test Conditions Symbol Min Typ Max Unit Collector cut-off current VCE = 20 V, VBE = 0 ICES 100 A Collector-base cut-off current VCB = 10 V, IE = 0 ICBO 100 nA Emitter-base cut-off current VEB = 2.5 V, IC = 0 IEBO 10 A Collector-emitter breakdown voltage IC = 5 mA, IB = 0 V(BR)CEO 15 V DC forward current transfer ratio VCE = 10 V, IC = 70 mA hFE 25 75 150

Electrical AC Characteristics

Tamb = 25C, unless otherwise specified Parameter Test Conditions Symbol Min Typ Max Unit Transition frequency VCE = 10 V, IC = 70 mA, f = 500 MHz fT 5 GHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 0.84 pF Collector-emitter capacitance VCE = 10 V, f = 1 MHz Cce 0.4 pF Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 3.5 pF Noise figure VCE = 10 V, IC = 70 mA, ZS = 50 , F 3.3 dB f = 500 MHz VCE = 10 V, IC = 70 mA, ZS = 50 , F 4.0 dB f = 800 MHz Power gain VCE = 10 V, IC = 70 mA, ZS = 50 , Gpe 11.5 dB ZL = ZLopt, f = 800 MHz Linear output voltage – two VCE = 10 V, IC = 70 mA, dIM = 60 dB, V1 = V2 500 mV tone intermodulation test f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Third order intercept point VCE = 10 V, IC = 70 mA, f = 800 MHz IP3 37 dBm 2 (9) Rev. 5, 22-Jan-01,

Common Emitter S–Parameters

Z0 = 50 Tamb = 25C, unless otherwise specified S11 S21 S12 S22 LIN LIN LIN LIN VCE/V IC/mA f/MHz ANG ANG ANG ANGMAG MAG MAG MAG deg deg deg deg 100 0.691 –68.6 11.94 137.4 0.044 59.4 0.807 –28.82 300 0.552 –135.5 6.04 100.7 0.071 46.5 0.521 –45.0 500 0.518 –162.6 3.85 84.4 0.087 49.4 0.453 –51.6 800 0.499 173.8 2.47 68.1 0.114 55.7 0.444 –63.0 5 1000 0.488 162.5 1.99 59.7 0.136 58.7 0.458 –71.3 1200 0.477 152.5 1.68 52.3 0.161 60.2 0.478 –79.3 1500 0.459 139.2 1.37 43.1 0.203 60.5 0.515 –91.2 1800 0.446 125.8 1.15 34.7 0.247 59.0 0.553 –102.4 2000 0.427 118.9 1.05 29.9 0.272 57.6 0.577 –109.4 100 0.538 –92.3 17.08 126.6 0.035 57.6 0.672 –38.9 300 0.465 –152.7 7.31 94.9 0.060 57.1 0.389 –51.7 500 0.452 –173.7 4.51 81.7 0.085 61.7 0.341 –57.7 800 0.444 167.6 2.87 67.7 0.125 64.1 0.343 –69.2 5 10 1000 0.436 157.3 2.31 60.3 0.153 64.0 0.359 –77.5 1200 0.429 148.6 1.96 53.5 0.182 63.0 0.379 –85.2 1500 0.413 136.4 1.59 44.7 0.227 60.3 0.415 –96.2 1800 0.403 124.0 1.35 36.5 0.271 57.0 0.451 –106.4 2000 0.387 116.8 1.24 31.8 0.294 54.8 0.474 –112.6 100 0.387 –134.8 22.79 112.9 0.024 65.1 0.467 –52.1 300 0.401 –172.7 8.44 89.5 0.055 71.8 0.255 –60.2 500 0.400 174.0 5.13 79.0 0.088 72.5 0.234 –67.0 800 0.401 160.7 3.25 67.1 0.137 69.9 0.249 –79.7 30 1000 0.392 152.5 2.61 60.5 0.170 67.7 0.269 –87.9 1200 0.390 144.5 2.21 54.2 0.202 64.8 0.291 –95.2 1500 0.375 133.8 1.81 46.1 0.249 60.2 0.326 –105.1 1800 0.365 121.9 1.54 38.3 0.293 55.6 0.362 –113.7 2000 0.351 115.4 1.41 33.6 0.315 52.7 0.383 –119.0 Rev. 5, 22-Jan-01 3 (9), S11 S21 S12 S22 LIN LIN LIN LIN VCE/V IC/mA f/MHz ANG ANG ANG ANGMAG MAG MAG MAG deg deg deg deg 100 0.370 –150.0 23.94 109.0 0.022 69.6 0.399 –55.7 300 0.395 –177.8 8.62 87.9 0.055 75.4 0.221 –62.3 500 0.396 171.3 5.23 78.1 0.090 74.8 0.208 –69.7 800 0.395 159.1 3.30 66.7 0.140 71.1 0.229 –82.8 50 1000 0.389 150.9 2.66 60.2 0.173 68.2 0.250 –90.8 1200 0.386 143.3 2.25 54.0 0.206 65.1 0.273 –98.0 1500 0.373 133.2 1.83 45.8 0.253 60.1 0.308 –107.5 1800 0.363 121.7 1.56 38.2 0.297 55.4 0.343 –115.7 2000 0.348 115.4 1.43 33.5 0.319 52.5 0.364 –120.8 100 0.374 –157.4 24.17 107.0 0.021 73.0 0.364 –56.8 300 0.397 179.7 8.60 87.1 0.055 77.4 0.206 –62.5 500 0.399 170.0 5.19 77.7 0.090 75.7 0.197 –70.3 800 0.398 158.4 3.29 66.2 0.141 71.6 0.221 –83.6 70 1000 0.394 150.3 2.65 59.8 0.175 68.6 0.243 –91.7 1200 0.389 143.3 2.24 53.5 0.207 65.3 0.267 –98.8 1500 0.378 132.8 1.82 45.4 0.255 60.3 0.303 –108.2 1800 0.368 121.7 1.55 37.7 0.299 55.4 0.338 –116.3 2000 0.355 114.9 1.42 32.9 0.321 52.5 0.359 –121.3 100 0.710 –62.3 12.15 140.0 0.036 61.8 0.844 –23.2 300 0.542 –129.2 6.46 103.2 0.061 48.7 0.591 –36.7 500 0.497 –157.8 4.14 86.6 0.075 51.4 0.528 –42.4 800 0.479 177.3 2.66 70.2 0.099 58.2 0.519 –52.7 5 1000 0.464 165.3 2.14 61.8 0.118 61.7 0.533 –60.5 1200 0.454 155.0 1.81 54.5 0.141 63.7 0.550 –68.3 1500 0.438 141.0 1.45 45.0 0.178 64.5 0.585 –79.8 1800 0.427 127.6 1.23 36.5 0.219 63.7 0.623 –91.0 2000 0.410 119.7 1.11 31.8 0.244 62.4 0.646 –98.1 100 0.544 –83.4 17.99 129.3 0.029 60.1 0.722 –31.2 300 0.436 –146.3 7.94 96.9 0.052 58.8 0.463 –40.3 500 0.417 –169.2 4.94 83.4 0.073 63.5 0.419 –45.2 800 0.410 170.8 3.14 69.6 0.109 66.4 0.419 –55.8 10 1000 0.397 160.5 2.52 62.1 0.134 66.8 0.433 –63.6 1200 0.394 151.1 2.13 55.5 0.160 66.1 0.450 –71.3 1500 0.384 139.1 1.73 46.6 0.201 63.8 0.483 –82.5 1800 0.372 125.9 1.46 38.1 0.241 61.1 0.520 –93.0 2000 0.357 118.6 1.33 33.4 0.264 59.0 0.542 –99.6 4 (9) Rev. 5, 22-Jan-01, S11 S21 S12 S22 LIN LIN LIN LIN VCE/V IC/mA f/MHz ANG ANG ANG ANGMAG MAG MAG MAG deg deg deg deg 100 0.356 –122.3 24.66 115.3 0.021 66.0 0.525 –40.2 300 0.351 –167.1 9.31 90.0 0.048 72.5 0.333 –42.5 500 0.349 178.4 5.65 80.5 0.077 73.6 0.313 –48.0 800 0.351 164.4 3.59 68.7 0.121 71.6 0.323 –60.0 30 1000 0.348 155.5 2.88 62.2 0.150 69.7 0.340 –68.3 1200 0.343 147.4 2.44 56.0 0.179 67.3 0.358 –76.2 1500 0.334 136.6 1.97 47.6 0.222 63.2 0.390 –87.2 1800 0.328 124.7 1.68 39.6 0.262 59.1 0.426 –97.0 2000 0.312 117.3 1.53 35.0 0.283 56.5 0.447 –103.1 100 0.325 –137.8 26.14 110.8 0.019 69.8 0.457 –41.9 300 0.337 –172.8 9.52 89.1 0.049 75.9 0.299 –42.2 500 0.339 174.8 5.78 79.3 0.079 75.7 0.286 –48.2 800 0.343 162.2 3.65 68.1 0.123 72.6 0.300 –61.0 10 50 1000 0.337 154.3 2.94 61.8 0.153 70.1 0.318 –69.7 1200 0.334 146.6 2.48 55.6 0.183 67.4 0.338 –77.6 1500 0.327 136.1 2.02 47.5 0.226 63.0 0.370 –88.5 1800 0.322 124.1 1.70 39.6 0.267 58.7 0.406 –98.2 2000 0.311 118.2 1.55 34.6 0.288 55.9 0.428 –104.1 100 0.323 –145.1 26.39 108.4 0.018 72.0 0.424 –41.8 300 0.339 –175.6 9.46 88.1 0.049 76.9 0.287 –41.1 500 0.339 174.1 5.74 78.8 0.079 76.3 0.278 –47.7 800 0.344 162.0 3.62 67.5 0.124 72.8 0.295 –61.0 70 1000 0.341 153.8 2.92 61.1 0.154 70.4 0.313 –69.7 1200 0.340 146.2 2.46 55.0 0.184 67.6 0.333 –77.6 1500 0.333 135.6 1.99 46.8 0.227 63.0 0.367 –88.7 1800 0.326 14.2 1.68 39.0 0.268 58.6 0.403 –98.4 2000 0.318 117.8 1.54 34.0 0.289 55.9 0.425 –104.4 Rev. 5, 22-Jan-01 5 (9),

Typical Characteristics (Tamb = 25C unless otherwise specified)

800 2.0 1.6 500 1.2 300 0.8 0.4 f=1MHz00025 50 75 100 125 15004812 16 20 16780 Tamb – Ambient Temperature ( °C ) 13598 VCB – Collector Base Voltage ( V ) Figure 1. Total Power Dissipation vs. Figure 3. Collector Base Capacitance vs. Ambient Temperature Collector Base Voltage 7000 5 5000 f=800MHz 4000 3 3000 2 f=500MHz V =10V 1 VCE=10V 1000 CEf=500MHz ZS=5000020 40 60 80 100 0 10 20 30 40 50 60 70 13597 IC – Collector Current ( mA ) 13599 IC – Collector Current ( mA ) Figure 2. Transition Frequency vs. Collector Current Figure 4. Noise Figure vs. Collector Current 6 (9) Rev. 5, 22-Jan-01fT– Transition Frequency ( MHz ) Ptot– Total Power Dissipation ( mW ) F – Noise Figure ( dB ) Ccb– Collector Base Capacitance ( pF ),

VCE = 10 V, IC = 70 mA , Z0 = 50 S11 S12

j 90° 120° 60° j0.5 j2 150° 2.0 GHz 30° j0.2 j5 2.0 GHz 1.0 1.0 0 ÁÁ0.2Á0.5 Á1ÁÁ2ÁÁ5Á 180° 0.1 0.2 0.4 0° ÁÁÁ ÁÁÁÁÁÁ 0.1 –j0.2 –j5 –150° –30° –j0.5 –j2 –120° –60° 13 542 –j 13 543 –90° Figure 5. Input reflection coefficient Figure 7. Reverse transmission coefficient

S21 S22

90° j 120° 60° j0.5 j2 150° 1.0 30° j0.2 j5 0.3 180° 20 40 0° 0 ÁÁ0.2ÁÁ0.5ÁÁ1 ÁÁ2 Á5Á 2.0 GHz ÁÁÁÁÁÁÁ0Á.3 ÁÁ 1.0 0.1 –j0.2 2.0 GHz –j5 –150° –30° –j0.5 –j2 –120° –60° 13 544 –90° 95 545 –j Figure 6. Forward transmission coefficient Figure 8. Output reflection coefficient Rev. 5, 22-Jan-01 7 (9),

Dimensions of BFR96TS in mm

96 12244 8 (9) Rev. 5, 22-Jan-01,

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Rev. 5, 22-Jan-01 9 (9)]
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